Nexperia USA Inc. PEMD3,115
- Part No.:
- PEMD3,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD3,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:7,036
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Product details
Overview
PEMD3 from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with built-in bias resistors R1 = R2 = 10 kΩ. It integrates complementary bipolar switching stages for digital logic interfacing and low-current peripheral driving in space-constrained PCBs.
For engineers reviewing the PEMD3 datasheet, PEMD3 pinout, PEMD3 application, or PEMD3 equivalent, this device serves as a compact, bias-resistor-integrated solution for level-shifting, IC input control, and discrete logic replacement-requiring no external base resistors and reducing BOM count in 3.3 V/5 V digital systems.
Technical Context
The PEMD3 integrates two monolithically fabricated transistors: TR1 (NPN) and TR2 (PNP), each with dedicated on-chip bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) connected in standard single-resistor-base configuration. The NPN stage exhibits fT = 230 MHz and hFE ≥ 30 at IC = 5 mA; the PNP stage delivers fT = 180 MHz and comparable gain under negative-polarity conditions.
Thermal performance is specified for FR4 PCB mounting: per-device Rth(j-a) = 417 K/W, enabling 300 mW total power dissipation at Tamb ≤ 25 °C. Input voltage thresholds are characterized across temperature: VI(on) = 1.8–2.5 V (TR1), VI(off) = 0.8–1.1 V (TR1), supporting reliable TTL/CMOS-compatible switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter blocking voltage per transistor; supports rail-to-rail switching in 3.3 V and 5 V logic domains without derating. |
| IO | 100 mA - Continuous DC output current capability per transistor; sufficient for driving LEDs, small relays, and logic inputs directly. |
| R1 / R2 | 10 kΩ / 10 kΩ - Matched on-die bias resistors eliminate external components and ensure consistent turn-on behavior across temperature. |
| fT (TR1) | 230 MHz - Transition frequency of NPN transistor; enables stable operation up to ~10–20 MHz digital switching with minimal propagation delay. |
| VCE(sat) | 150 mV @ IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss and heat generation in high-duty-cycle switching. |
| hFE | ≥30 @ VCE = 5 V, IC = 5 mA - Guaranteed DC current gain ensures robust drive margin for logic-level inputs and noise-immune operation. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height; designed for high-density routing and reflow compatibility on FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference node for first transistor stage. |
| 2 | I1 | Base input for TR1 (NPN); accepts logic-high signal to activate NPN output (O1). |
| 3 | O2 | Collector output for TR2 (PNP); sinks current when TR2 is enabled via I2. |
| 4 | GND2 | Emiter connection for TR2 (PNP); independent ground return for second transistor stage. |
| 5 | I2 | Base input for TR2 (PNP); accepts logic-low or active-low signal to activate PNP output (O2). |
| 6 | O1 | Collector output for TR1 (NPN); sources current when TR1 is enabled via I1. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors | Eliminates need for two external base resistors per transistor, reducing PCB area and assembly steps. |
| NPN/PNP complementarity | Enables push-pull or complementary switching topologies without discrete pairing or matching effort. |
| Ultra-small SOT666 footprint | 1.6 mm × 1.2 mm area saves >60% board space vs. dual-SOT363 solutions; ideal for wearables and IoT sensors. |
| 100 mA per channel rating | Supports direct drive of status LEDs, optocoupler inputs, and microcontroller GPIO expanders without buffering. |
Applications
| LED Driver Interface | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving dual-color (red/green) LED indicators from a single 3.3 V MCU port with active-high and active-low control. IC Role / Device Role / Timing Role: NPN (TR1) switches red LED anode; PNP (TR2) switches green LED cathode - forming complementary static output pair. Use Value: Eliminates four external resistors and two discrete transistors; reduces netlist complexity and improves layout repeatability. |
Use Scenario: Extending limited GPIO count on ARM Cortex-M0+ MCU to control six peripheral enable lines (e.g., sensor power, ADC reference, DAC reset). IC Role / Device Role / Timing Role: Each PEMD3 provides two independent switch channels; three devices deliver six controlled outputs with shared control logic. Use Value: Achieves 6-channel expansion using only three 1.2 mm × 1.6 mm packages - saving >22 mm² vs. discrete transistor + resistor solutions. |
| Digital Logic Level Shifter | Low-Power Sensor Interface |
Use Scenario: Translating 1.8 V logic outputs from an ultra-low-power sensor hub to 5 V-compatible enable inputs on analog front-end ICs. IC Role / Device Role / Timing Role: TR1 (NPN) acts as low-side level shifter; TR2 (PNP) provides inverted path for active-low signals - both operating within VI(on)/VI(off) windows. Use Value: Delivers rail-to-rail translation without external pull-ups or level-shifter ICs; maintains <100 ns propagation delay across temperature. |
Use Scenario: Enabling/disabling supply to MEMS accelerometers and humidity sensors during sleep cycles in battery-powered edge nodes. IC Role / Device Role / Timing Role: TR2 (PNP) controls VCC to sensor; TR1 (NPN) monitors sensor ready flag - sharing one control line via complementary logic. Use Value: Reduces quiescent current to <1 µA in shutdown mode (ICEO ≤ 5 µA at 150 °C); extends battery life by >18 months in 10-s wake cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMB11 | PNP/PNP dual RET; identical R1/R2 = 10 kΩ, same SOT666 package, but lacks NPN stage. | Suitable only for dual-sink or dual-active-low configurations; cannot replicate PEMD3's complementary sourcing/sinking capability. | Select when both loads require active-low control and share common VCC. |
| PEMH11 | NPN/NPN dual RET; same package and bias values, but no PNP stage. | Supports dual-source or parallel-drive topologies; cannot provide inverted or high-side switching without additional components. | Choose for redundant NPN outputs (e.g., OR-ing, current boosting) where polarity inversion is unnecessary. |
Compared with PEMB11 and PEMH11, the PEMD3 uniquely enables true complementary switching in a single package-reducing component count by two transistors and four resistors versus using either alternative with external polarity inversion.
Availability
PEMD3 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, digital logic level shifting, and low-power sensor interface applications requiring stable component supply and long-term industrial availability.
Supply support for PEMD3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, size, and manufacturability.
The PEMD3 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace general-purpose transistors in digital logic interfacing, reducing design complexity and improving assembly yield in consumer, industrial, and computing applications.
FAQ
What is the maximum ambient temperature for continuous operation of PEMD3 at full 100 mA load?
The PEMD3 is rated for continuous operation up to 150 °C junction temperature. With Rth(j-a) = 417 K/W (per device on FR4), sustained 100 mA per transistor at VCE(sat) ≈ 150 mV yields ~30 mW dissipation per transistor (60 mW total), allowing full-load operation up to +125 °C ambient while maintaining Tj < 150 °C.
Can PEMD3 be used in automotive applications?
No. The PEMD3 is explicitly marked as non-automotive qualified in its revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or qualification for automotive temperature ranges, reliability, or failure rate requirements. Use only in industrial, consumer, or computing applications.
How does the built-in R2 resistor function in the NPN stage (TR1)?
In TR1 (NPN), R2 connects internally between base and emitter - forming a voltage divider with R1 (base-to-input). This configuration ensures predictable turn-off behavior by actively pulling the base to GND1 when the input is low, eliminating leakage-induced false turn-on and improving noise immunity over single-resistor biasing.
Is there a recommended PCB footprint for SOT666 reflow soldering?
Yes. Nexperia specifies a reflow footprint with 0.55 mm pad length (2×), 0.25 mm pad width (2×), 0.6 mm spacing (2×), and 0.65 mm spacing (2×) for thermal relief and solder joint reliability. The land pattern occupies 2.75 mm × 2.45 mm area and is optimized for standard Type 3 solder paste and peak reflow temperatures of 260 °C.
PEMD3,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD3,115 FAQ
1.How can I place an order for PEMD3,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD3,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD3,115 reliable?
The price and inventory of PEMD3,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD3,115 is usually 5 days.
3.What payment methods are accepted for PEMD3,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD3,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD3,115?
PEMD3,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD3,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD3,115?
For technical support, including PEMD3,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD3,115 requirements.
6.How does Aetrix verify that PEMD3,115 is sourced from the original manufacturer or authorized distributors?
All PEMD3,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD3,115 meets industry standards.
7.What is the process for return or replacement of PEMD3,115?
All PEMD3,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD3,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD3,115 part is unused and in its original packaging.
Return procedure for PEMD3,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD3,115 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

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PUMD2,115
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

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PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

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PUMH9,115
Nexperia USA Inc.

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PUMD3,115
Nexperia USA Inc.

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DCX114EU-7-F
Diodes Incorporated

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PUMD13,115
Nexperia USA Inc.
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