Nexperia USA Inc. PEMD4,115

Overview

PEMD4 from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V V_CEO, 100 mA output current per transistor, with integrated 10 kΩ input bias resistor (R1) and open R2. It functions as a dual-channel digital switch driver in compact logic interface circuits, enabling direct microcontroller GPIO control of low-current loads without external base resistors.

For engineers reviewing the PEMD4 datasheet, PEMD4 pinout, PEMD4 application, or PEMD4 equivalent, this device supports simplified digital signal conditioning, IC input control, and peripheral driver design where space-constrained dual-polarity switching and guaranteed biasing are required.

Technical Context

The PEMD4 integrates two complementary transistors - TR1 (NPN) and TR2 (PNP) - each with a dedicated 10 kΩ input bias resistor (R1), while R2 remains unconnected. Its internal resistor network enables single-resistor drive for both devices, eliminating discrete bias components.

Designed for digital switching applications, it operates with V_CE ≤ 50 V and I_O ≤ 100 mA per channel, exhibits h_FE ≥ 200 at I_C = 1 mA, and maintains V_CE(sat) ≤ 150 mV at I_C = 10 mA / I_B = 0.5 mA, ensuring low-loss on-state performance in logic-level interfacing.

Key Specifications

Pinout & Package

SOT666 is a 6-lead ultra-small flat lead surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm, with 0.5 mm pitch and FR4-compatible reflow footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar resistor-equipped transistor applications.

Compared with PEMH4 and PEMB4, the PEMD4 uniquely provides matched NPN/PNP pairing in one package-enabling true push-pull operation, bidirectional level translation, and reduced component count in mixed-polarity interface designs.

Availability

PEMD4 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, low-power sensor conditioning, and industrial control input conditioning requiring stable component supply and consistent parametric performance across production batches.

Supply support for PEMD4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete, logic, and MOSFET devices, with manufacturing rooted in process technology leadership and automotive-grade quality systems.

The PEMD4 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce component count and simplify digital interface design in space-constrained consumer, industrial, and computing applications.

FAQ

What is the function of R2 in the PEMD4?

R2 is open (unconnected) in the PEMD4. Unlike some RET variants with dual internal resistors, this device uses only R1 (10 kΩ) for base biasing on both transistors. The absence of R2 simplifies the internal structure and ensures predictable input impedance without unintended feedback paths.

Can PEMD4 replace discrete NPN and PNP transistors in existing designs?

Yes, provided the original design uses 10 kΩ base resistors and operates within 50 V/100 mA limits. Pin mapping differs from standard transistor layouts-GND1/I1/O1 and GND2/I2/O2 must be correctly routed-and thermal derating must follow the 300 mW device limit on FR4 PCBs.

Is PEMD4 qualified for automotive applications?

No. Per Nexperia's 2022 revision history, PEMD4 is explicitly designated as non-automotive qualified. It lacks AEC-Q101 stress testing and is intended for industrial, computing, and consumer applications where automotive reliability requirements do not apply.

What is the maximum operating temperature for continuous use?

The PEMD4 supports continuous operation up to 150 °C junction temperature (T_j) and −65 °C to +150 °C ambient (T_amb). At 25 °C ambient, full 300 mW device power dissipation is allowed; above that, linear derating applies per the published curve (416 K/W R_th(j-a)).