Nexperia USA Inc. PEMD9,115
- Part No.:
- PEMD9,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD9,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:7,939
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Product details
Overview
PEMD9 from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It integrates complementary bipolar transistors with fixed base bias networks to simplify digital switching in space-constrained PCB layouts.
For engineers reviewing the PEMD9 datasheet, PEMD9 pinout, PEMD9 application, or PEMD9 equivalent, this device serves as a drop-in replacement for discrete NPN+PNP pairs in low-current logic interfacing, peripheral driver circuits, and IC input control - where reduced component count and consistent biasing are critical.
Technical Context
The PEMD9 integrates two monolithically fabricated transistors: TR1 (NPN) and TR2 (PNP), each with dedicated on-chip bias resistors. TR1 features hFE ≥ 100 at IC = 5 mA, VCE = 5 V; TR2 delivers comparable gain under negative-polarity conditions (VCE = −5 V). Both transistors share thermal coupling within the same die but operate independently.
Resistor network topology uses R1 connected between input and base, and R2 between base and emitter - enabling single-resistor control of base current without external bias components. Input voltage thresholds VI(on) and VI(off) are specified across −40 °C to +100 °C, supporting industrial temperature operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; defines safe switching range for 3.3 V/5 V logic-level loads. |
| IO | 100 mA - Continuous output current per transistor; supports driving LEDs, small relays, or logic inputs directly. |
| R1 | 10 kΩ (7–13 kΩ typ/max) - Input bias resistor setting base current; enables direct microcontroller GPIO drive without external pull-up/down. |
| R2/R1 ratio | 4.7 (3.7–5.7 typ/max) - Sets internal base-emitter feedback; stabilizes operating point against process and temperature variation. |
| fT (TR1) | 230 MHz - Transition frequency of NPN transistor; ensures fast switching up to ~10 MHz digital signals. |
| Ptot (device) | 300 mW at Tamb ≤ 25 °C - Total power dissipation limit; requires derating above 25 °C per Fig. 1 curve. |
| Rth(j-a) | 417 K/W - Junction-to-ambient thermal resistance (per device); informs heatsinking needs on standard FR4 PCB. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height. Ultra-flat profile optimized for high-density routing and automated assembly.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference node for first transistor's current path. |
| 2 | I1 | Input terminal for TR1 base bias network; accepts TTL/CMOS logic levels directly. |
| 3 | O2 | Collector output of TR2 (PNP); sinks current when TR2 is active (e.g., active-low enable). |
| 4 | GND2 | Emiter connection for TR2 (PNP); independent ground return for second transistor. |
| 5 | I2 | Input terminal for TR2 base bias network; electrically isolated from I1, allowing dual independent control. |
| 6 | O1 | Collector output of TR1 (NPN); sources current when TR1 is active (e.g., active-high signal drive). |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors R1/R2 | Eliminates need for 4 external resistors per RET pair - reduces BOM count and layout area by >60% vs discrete solution. |
| 100 mA per transistor output | Supports direct drive of optocouplers, small solenoids, or multiple logic inputs without buffer stages. |
| NPN/PNP complementarity | Enables push-pull or complementary switching topologies (e.g., level translation, bidirectional bus control) in one footprint. |
| SOT666 ultra-small package | 0.86 mm² PCB area (1.6 mm × 0.55 mm body) - fits tight spaces in wearables, IoT sensors, and portable medical devices. |
| Industrial temperature range | −40 °C to +150 °C junction operation - validated for use in automotive cabin modules and industrial PLC I/O cards. |
Applications
| LED Driver Interface | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving dual-color LED indicators from a 3.3 V MCU with limited I/O pins and no external bias components. IC Role / Device Role / Timing Role: PEMD9 acts as a dual-channel level-shifting switch - TR1 sources current for red LED (anode), TR2 sinks current for green LED (cathode). Use Value: Single-device solution replaces two discrete transistors + four resistors, reducing layout area by 45% and eliminating bias tuning during production. |
Use Scenario: Adding two additional active-low enable outputs to an STM32-based motor controller board with no spare GPIOs. IC Role / Device Role / Timing Role: PEMD9 provides synchronized, resistor-biased enable signals to two H-bridge drivers - TR2 outputs drive EN pins with guaranteed VI(off) < 0.5 V at 25 °C. Use Value: Enables deterministic turn-off timing (toff < 150 ns) without external pull-downs, improving system EMI margin by 8 dB. |
| Digital Logic Level Translator | Low-Power Sensor Interface |
|
Use Scenario: Interfacing 1.8 V FPGA I/O banks to 5 V legacy peripherals requiring bidirectional signal conditioning. IC Role / Device Role / Timing Role: PEMD9 implements open-collector emulation using TR1 (pull-up) and TR2 (pull-down) in parallel configuration with shared GND nodes. Use Value: Achieves <10 ns propagation delay asymmetry between rising/falling edges - critical for SPI clock domain crossing at 20 MHz. |
Use Scenario: Enabling/disabling analog sensor supply rails (e.g., pressure sensor VDD) in battery-powered environmental monitors. IC Role / Device Role / Timing Role: PEMD9 operates as a precision load switch - TR1 controls VDD rail (100 µA quiescent current), TR2 monitors fault via collector feedback. Use Value: Reduces standby power by 92% vs discrete MOSFET solution due to integrated resistor network eliminating gate leakage paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMH9 | NPN/NPN configuration only; identical R1/R2 values and SOT666 package. | Lacks PNP capability - unsuitable for complementary switching or active-low outputs. | Select when dual sourcing (e.g., two anode-driven LEDs) is required without sinking capability. |
| PEMB9 | PNP/PNP configuration only; same voltage/current ratings and bias network. | Cannot source current - incompatible with high-side switching or active-high control paths. | Choose for dual-sinking applications like redundant enable lines or cathode-driven displays. |
Compared with PEMH9 and PEMB9, the PEMD9 uniquely combines NPN and PNP functionality in one device - enabling true push-pull operation, bidirectional level translation, and mixed-signal interface design without stacking multiple RETs or adding discrete transistors.
Availability
PEMD9 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, digital logic level translation, and low-power sensor interface applications requiring stable component supply and long-term manufacturability.
Supply support for PEMD9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The PEMD9 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line - engineered specifically to reduce bill-of-materials complexity and improve yield in cost-sensitive, space-constrained digital interface designs.
FAQ
What is the maximum ambient temperature for continuous operation of PEMD9?
The PEMD9 supports ambient temperatures from −65 °C to +150 °C, but its usable ambient range depends on power dissipation. At full 300 mW device power, ambient must stay ≤ 25 °C per the derating curve in Figure 1. With 100 mW total dissipation, ambient can reach 100 °C while maintaining Tj ≤ 150 °C.
Can PEMD9 be used in linear amplifier configurations?
No - the PEMD9 is characterized and qualified only for switching operation. Its built-in resistors fix the base bias point, and parameters like hFE and VCEsat are specified under saturated switching conditions. Linear gain stability, distortion, and thermal drift are not characterized or guaranteed.
How does the R2/R1 ratio affect switching behavior?
The R2/R1 ratio of 4.7 sets the internal base-emitter feedback factor, which determines the effective input impedance and noise immunity. A higher ratio increases off-state margin (VI(off) rises), while a lower ratio improves turn-on speed at the cost of higher static input current - both extremes are bounded by the 3.7–5.7 spec range.
Is reflow soldering the only recommended assembly method for PEMD9?
Yes - the datasheet explicitly states reflow soldering is the only recommended method. Wave soldering or hand soldering risks exceeding the 260 °C peak temperature limit or causing thermal stress fractures in the SOT666 mold compound, potentially degrading R1/R2 tolerance or junction integrity.
PEMD9,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD9,115 FAQ
1.How can I place an order for PEMD9,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD9,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD9,115 reliable?
The price and inventory of PEMD9,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD9,115 is usually 5 days.
3.What payment methods are accepted for PEMD9,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD9,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD9,115?
PEMD9,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD9,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD9,115?
For technical support, including PEMD9,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD9,115 requirements.
6.How does Aetrix verify that PEMD9,115 is sourced from the original manufacturer or authorized distributors?
All PEMD9,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD9,115 meets industry standards.
7.What is the process for return or replacement of PEMD9,115?
All PEMD9,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD9,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD9,115 part is unused and in its original packaging.
Return procedure for PEMD9,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD9,115 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

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Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

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PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

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PUMH9,115
Nexperia USA Inc.

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PUMD3,115
Nexperia USA Inc.

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DCX114EU-7-F
Diodes Incorporated

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PUMD13,115
Nexperia USA Inc.
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