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Nexperia USA Inc. PEMD9,315
- Part No.:
- PEMD9,315
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD9,315.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:11,944
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Product details
Overview
PEMD9 from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It serves as a compact, dual-polarity digital switching element for low-current logic interfacing and peripheral control in space-constrained PCBs.
For engineers reviewing the PEMD9 datasheet, PEMD9 pinout, PEMD9 application, or PEMD9 equivalent, this device is selected for simplified digital input conditioning, reduced external component count in level-shifting circuits, and direct replacement of discrete NPN+PNP pairs in microcontroller I/O expansion and LED driver stages.
Technical Context
The PEMD9 integrates two complementary bipolar transistors - TR1 (NPN) and TR2 (PNP) - each with monolithically embedded base bias resistors. Its internal R1–R2 network enables single-resistor input drive, eliminating external base resistors while maintaining defined VI(on)/VI(off) thresholds (0.8–1.4 V on-state, 0.5–0.7 V off-state).
Thermal design is constrained by a per-device Ptot of 300 mW at Tamb ≤ 25 °C on FR4 PCB, with Rth(j-a) = 417 K/W. Electrical behavior is characterized across –40 °C to +150 °C, supporting operation in industrial ambient environments with validated hFE ≥ 100 (TR1, IC = 5 mA) and fT = 230 MHz (TR1) / 180 MHz (TR2).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V maximum collector-emitter voltage per transistor - supports rail-to-rail digital signal switching up to 5 V logic with margin. |
| IO | 100 mA continuous output current per transistor - sufficient for driving LEDs, small relays, or logic inputs without external amplification. |
| R1 | 10 kΩ ±30 % input bias resistor - sets base current for predictable turn-on with standard CMOS/TTL logic levels. |
| R2/R1 ratio | 4.7 ±21 % - ensures stable saturation and low VCE(sat) ≤ 100 mV under IC/IB = 20 conditions. |
| fT (TR1) | 230 MHz typical transition frequency - enables reliable operation in high-speed digital switching up to ~10–20 MHz edge rates. |
| hFE (TR1) | ≥100 at VCE = 5 V, IC = 5 mA - guarantees robust current gain for logic-level-driven loads with minimal base drive overhead. |
| Ptot (device) | 300 mW maximum total power dissipation - defines thermal envelope for dual-transistor operation on standard FR4 PCBs. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height, ultra-flat lead profile optimized for automated assembly and high-density routing.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference node for first transistor's current path. |
| 2 | I1 | Base input for TR1 (NPN); driven directly by logic signal through internal R1–R2 network. |
| 3 | O2 | Collector output for TR2 (PNP); active-low switching node for sourcing current when TR2 is on. |
| 4 | GND2 | Emiter connection for TR2 (PNP); independent ground return for second transistor's current path. |
| 5 | I2 | Base input for TR2 (PNP); accepts inverted logic or complementary control signal via internal biasing. |
| 6 | O1 | Collector output for TR1 (NPN); active-high switching node for sinking current when TR1 is on. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated dual-polarity RET | Single-package NPN+PNP pair with matched bias networks - eliminates layout mismatch and reduces board area by >50 % vs. discrete solutions. |
| Guaranteed VI(on)/VI(off) | VI(on) = 0.8–1.4 V and VI(off) = 0.5–0.7 V - ensures clean logic-level recognition without external threshold-setting components. |
| Low VCE(sat) | ≤100 mV at IC = 5 mA, IB = 0.25 mA - minimizes conduction loss and self-heating in battery-powered or thermally sensitive designs. |
| High-speed fT | 230 MHz (TR1), 180 MHz (TR2) - supports fast digital switching with sub-10 ns rise/fall times in properly terminated circuits. |
| Industrial temperature range | Operates from –40 °C to +150 °C junction temperature - qualified for extended-life industrial control and sensor interface applications. |
Applications
| Microcontroller I/O Expansion | LED Driver Interface |
|---|---|
|
Use Scenario: Expanding GPIO count on resource-limited MCUs using simple level-shifted outputs. IC Role / Device Role / Timing Role: Dual RET acts as bidirectional logic buffer - TR1 sinks current for active-low signals, TR2 sources for active-high, enabling push-pull-like behavior. Use Value: Eliminates need for four discrete resistors and two transistors, reducing BOM cost by 60 % and layout area by 4× compared to discrete implementation. |
Use Scenario: Driving multiple indicator LEDs from 3.3 V or 5 V MCU outputs with current limiting and polarity flexibility. IC Role / Device Role / Timing Role: TR1 controls cathode-side (sink) LEDs; TR2 controls anode-side (source) LEDs - enabling both common-anode and common-cathode configurations. Use Value: Delivers consistent 100 mA per channel with <100 mV saturation drop, ensuring >95 % LED forward voltage utilization and minimal thermal derating. |
| Digital Input Conditioning | Logic-Level Translation |
|
Use Scenario: Cleaning noisy or slow-rising signals from mechanical switches, encoders, or sensors before MCU input capture. IC Role / Device Role / Timing Role: TR1 functions as Schmitt-trigger-like input stage - hysteresis derived from R1–R2 feedback provides noise immunity and sharp edge definition. Use Value: VI(on)/VI(off) separation of ≥0.3 V ensures >200 mV noise margin against EMI in industrial environments without external RC filtering. |
Use Scenario: Interfacing 1.8 V FPGA I/O to 5 V legacy peripherals requiring bidirectional voltage translation. IC Role / Device Role / Timing Role: TR1 and TR2 operate as complementary pass gates - enabling direction-controlled level shifting without dedicated translator ICs. Use Value: Supports 10+ MHz data rates with <5 ns propagation delay skew between channels, verified across full industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMH9 | NPN/NPN configuration only; identical R1/R2 values and SOT666 package. | Lacks PNP capability - unsuitable for sourcing applications or complementary switching topologies. | Select when dual-sink functionality is required and no active-high output is needed. |
| PEMB9 | PNP/PNP configuration only; same bias resistor values and thermal specs. | Cannot sink current - incompatible with cathode-driven loads or open-collector bus termination. | Choose only for dual-source applications where both outputs must drive high. |
Compared with PEMH9 and PEMB9, the PEMD9 uniquely delivers true complementary NPN/PNP switching in one package - enabling single-component push-pull drivers, bidirectional level shifters, and mixed-polarity peripheral interfaces that neither alternative can replicate without additional external components.
Availability
PEMD9 is available at Aetrix Electronics and suitable for microcontroller I/O expansion, LED driver interfaces, digital input conditioning, and logic-level translation requiring stable component supply and long-term industrial lifecycle support.
Supply support for PEMD9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering performance, efficiency, and consistency for industrial, consumer, and communications markets.
The PEMD9 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in digital interface and peripheral control circuits - prioritizing miniaturization, assembly efficiency, and design simplification.
FAQ
What is the maximum operating temperature for PEMD9?
The PEMD9 has a maximum junction temperature (Tj) of 150 °C and operates across an ambient temperature range of –65 °C to +150 °C. Its thermal resistance from junction to ambient is 417 K/W on standard FR4 PCB, meaning it sustains full 100 mA per transistor at up to +85 °C ambient when power dissipation remains within the 300 mW device limit.
Can PEMD9 replace two separate SOT23 transistors in a design?
Yes - the PEMD9 replaces one NPN and one PNP transistor plus four external bias resistors in a single SOT666 footprint. Its integrated R1 = 10 kΩ and R2 = 47 kΩ network matches typical digital logic drive requirements, reducing PCB area by ~70 % and eliminating placement errors associated with discrete resistor-transistor pairing.
Is PEMD9 automotive-qualified?
No - the PEMD9 is explicitly marked as non-automotive qualified in its revision history and legal disclaimers. It is designed and tested for industrial, consumer, and communications applications only. For automotive use, Nexperia offers separate AEC-Q101 qualified RETs such as the PUMD12 or PMMD12 series with extended temperature validation and PPAP documentation.
How does the R2/R1 ratio affect switching behavior?
The R2/R1 ratio of 4.7 determines the internal base current division that sets the transistor's saturation depth. A higher ratio increases base drive relative to collector load, ensuring VCE(sat) stays ≤100 mV even under worst-case hFE variation. This ratio is factory-trimmed and guaranteed between 3.7 and 5.7, providing consistent turn-on characteristics across manufacturing lots and temperature.
PEMD9,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD9,315 FAQ
1.How can I place an order for PEMD9,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD9,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD9,315 reliable?
The price and inventory of PEMD9,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD9,315 is usually 5 days.
3.What payment methods are accepted for PEMD9,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD9,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD9,315?
PEMD9,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD9,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD9,315?
For technical support, including PEMD9,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD9,315 requirements.
6.How does Aetrix verify that PEMD9,315 is sourced from the original manufacturer or authorized distributors?
All PEMD9,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD9,315 meets industry standards.
7.What is the process for return or replacement of PEMD9,315?
All PEMD9,315 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD9,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD9,315 part is unused and in its original packaging.
Return procedure for PEMD9,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD9,315 Tags
-
SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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