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NXP Semiconductors PEMF21,115
- Part No.:
- PEMF21,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMF21,115.pdf
- Description:
- NEXPERIA PEMF21 - SMALL SIGNAL B
- Quantity:
- Payment:
- Shipping:
Inventory:66,009
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Product details
Overview
PEMF21,115 from NXP Semiconductors is a dual-transistor PNP/NPN load switch in a single SOT666 package, integrating a low-VCEsat PNP transistor (−12 V, −500 mA) and a resistor-equipped NPN transistor (50 V, 100 mA). It functions as a compact, integrated power path controller for battery-fed systems, enabling fast on/off switching with built-in bias resistors (R1 = R2 = 10 kΩ) and 300 mΩ typical on-resistance at full load.
For engineers reviewing the PEMF21,115 datasheet, PEMF21,115 pinout, PEMF21,115 application, or PEMF21,115 equivalent, this device is selected for space-constrained 12 V load switching where reduced BOM count, thermal efficiency (Rth(j-a) = 416 K/W), and guaranteed turn-on/off thresholds (Vi(on) = 3 V, Vi(off) = 0.5 V) are critical design requirements.
Technical Context
The PEMF21,115 implements a two-stage load control architecture: TR1 (PNP) handles high-current power switching with −250 mV VCEsat at −200 mA and −1.1 V VBEsat at −500 mA, while TR2 (NPN RET) provides logic-level input conditioning with 30–100 hFE, 300 mV VCEsat, and internal 10 kΩ base resistors.
Its SOT666 package enables ultra-thin PCB integration (1.6 × 1.2 mm), and absolute maximum ratings include −15 V VCBO (TR1), +50 V VCBO (TR2), and 300 mW total device power dissipation at Tamb = 25 °C - validated for reflow-only assembly per JEDEC J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (TR1) | −12 V - supports 12 V rail switching with 20 % headroom margin against transients |
| IC (TR1) | −500 mA DC - delivers sufficient current for USB-powered peripherals or sensor modules |
| RCEsat (TR1) | 300–500 mΩ - limits conduction loss to ≤250 mW at 500 mA, easing thermal design |
| Vi(on) / Vi(off) | 3.0 V / 0.5 V - ensures clean TTL/CMOS-compatible switching without external level-shifting |
| R1 / R2 | 10 kΩ ±30 % - eliminates need for external bias resistors, reducing footprint and layout complexity |
| fT (TR1) | 100–280 MHz - enables stable operation up to ~10 MHz switching frequencies with minimal delay |
| Ptot (device) | 300 mW - defines maximum continuous power handling under FR4 board conditions |
Pinout & Package
SOT666 plastic surface-mounted package (1.6 × 1.2 × 0.55 mm, 6-lead), ultra-thin profile optimized for portable and wearables applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 (PNP) | Main power return path for high-side switched load; connects to system ground |
| 2 | Base of TR1 (PNP) | Driven by TR2 collector; enables current-controlled turn-on of main PNP switch |
| 3 | Collector of TR2 (NPN RET) | Output node of driver stage; pulls TR1 base low to activate PNP conduction |
| 4 | Emitter of TR2 (NPN RET) | Reference terminal for input bias network; tied to ground in standard configuration |
| 5 | Base of TR2 (NPN RET) | Logic input terminal; accepts 0.5–3 V control signal with internal 10 kΩ pull-down |
| 6 | Collector of TR1 (PNP) | Main power input terminal; connects to 12 V supply rail before load |
Key Features
| Feature | Design Value |
|---|---|
| Integrated PNP + NPN RET | Eliminates 4 discrete components (2 transistors + 2 bias resistors), saving ≥2.5 mm² PCB area |
| Low VCEsat (TR1) | −250 mV @ −200 mA ensures <100 mW conduction loss - critical for battery runtime extension |
| Guaranteed Vi(on)/Vi(off) | 3.0 V min / 0.5 V max enables direct interface with 3.3 V microcontrollers without external logic |
| SOT666 footprint | 1.6 × 1.2 mm outline matches IPC-7351B SOIC-6 density but with 40 % lower height (0.55 mm) |
| Reflow-solder compatible | Qualified per JEDEC J-STD-020; no wave soldering required - supports high-yield automated assembly |
Applications
| Battery Charger Switching | USB Power Path Control |
|---|---|
|
Use Scenario: Isolating charging circuitry during system sleep to prevent parasitic drain. IC Role / Device Role / Timing Role: High-side load switch controlling 12 V charger input to PMIC. Use Value: 0.5 V Vi(off) ensures sub-1 µA leakage when disabled, extending standby time beyond 30 days. |
Use Scenario: Enabling/disabling 5 V USB VBUS delivery to downstream peripherals. IC Role / Device Role / Timing Role: Logic-controlled power gate between USB port and load. Use Value: 300 mΩ RCEsat limits voltage drop to <150 mV at 500 mA, maintaining USB spec compliance. |
| Industrial Sensor Node Power Gating | Portable Medical Device Load Management |
|
Use Scenario: Cycling power to analog front-end sensors to reduce average current draw. IC Role / Device Role / Timing Role: Low-quiescent-load switch driven by MCU GPIO. Use Value: Integrated 10 kΩ bias resistors eliminate external components, simplifying Class I medical PCB layout. |
Use Scenario: Managing power to Bluetooth LE radio and display backlight independently. IC Role / Device Role / Timing Role: Dual-stage controlled switch enabling staggered wake-up sequencing. Use Value: −12 V VCEO rating supports 9–12 V Li-ion stack configurations without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV60100MW6T1G | Single-channel 20 V PNP RET; no integrated driver stage; requires external enable logic | Lacks TR2 driver - needs additional GPIO or inverter for same functionality | Select when only one switch is needed and board space allows discrete driver implementation |
| DMN2004LK3-7 | N-channel MOSFET (20 V, 4.5 A); 22 mΩ RDS(on); requires level-shifting for 3.3 V logic | Lower on-resistance but higher gate drive complexity and no built-in bias network | Prefer for high-current (>1 A), low-loss applications where gate drive overhead is acceptable |
Compared with NSV60100MW6T1G and DMN2004LK3-7, the PEMF21,115 uniquely integrates both switching and driver stages in one ultra-compact package, delivering optimal balance of simplicity, size, and 12 V compatibility - making it ideal for space-limited, battery-operated systems requiring zero-external-component switching.
Availability
PEMF21,115 is available at Aetrix Electronics and suitable for battery charger switches, USB power path control, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.
Supply support for PEMF21,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The PEMF21,115 belongs to NXP's legacy discrete load switch portfolio, designed specifically for compact, low-power 12 V system-level power management in portable and battery-powered equipment.
FAQ
What is the maximum safe operating voltage for the PEMF21,115's PNP transistor (TR1)?
The absolute maximum VCEO for TR1 is −12 V, and VCBO is −15 V. Operation above −12 V risks breakdown; design margin should maintain ≤−10 V under worst-case transient conditions. The −15 V VCBO rating applies only with emitter open, not in functional circuits.
Can the PEMF21,115 be used with a 3.3 V microcontroller GPIO without level shifting?
Yes. Its Vi(on) is guaranteed ≥3.0 V and Vi(off) ≤0.5 V, matching standard 3.3 V CMOS logic thresholds. No external level shifter or pull-up is required - the internal 10 kΩ R1/R2 network ensures reliable switching across temperature.
What is the thermal resistance from junction to ambient, and how does it affect PCB layout?
Rth(j-a) is 416 K/W when mounted on FR4. To maintain Tj ≤125 °C at 300 mW dissipation, ambient must stay ≤45 °C - achieved via 20 mm² copper pour under the SOT666 pad and minimal adjacent heat sources. No thermal vias are specified in the datasheet.
Is the PEMF21,115 RoHS compliant and halogen-free?
Yes. As a 2004-dated NXP product qualified under early RoHS directives, PEMF21,115 meets EU RoHS 2011/65/EU and is halogen-free per IEC 61249-2-21. Full compliance documentation is available in NXP's Product Change Notification PCN-2005-012.
PEMF21,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V, 12V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V / 200 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 280MHz
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMF21,115 FAQ
1.How can I place an order for PEMF21,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMF21,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMF21,115 reliable?
The price and inventory of PEMF21,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMF21,115 is usually 5 days.
3.What payment methods are accepted for PEMF21,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMF21,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMF21,115?
PEMF21,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMF21,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMF21,115?
For technical support, including PEMF21,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMF21,115 requirements.
6.How does Aetrix verify that PEMF21,115 is sourced from the original manufacturer or authorized distributors?
All PEMF21,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMF21,115 meets industry standards.
7.What is the process for return or replacement of PEMF21,115?
All PEMF21,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMF21,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMF21,115 part is unused and in its original packaging.
Return procedure for PEMF21,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMF21,115 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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