Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PEMH11,115

Part No.:
PEMH11,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SOT-563, SOT-666
Datasheet:
AetrixPEMH11,115.pdf
Description:
TRANS PREBIAS 2NPN 50V SOT666
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,966

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PEMH11 from Nexperia is an NPN/NPN resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with integrated 10 kΩ input bias resistors (R1 = R2 = 10 kΩ). It functions as a dual digital switching element for low-current logic interfacing and peripheral control in space-constrained PCBs.

For engineers reviewing the PEMH11 datasheet, PEMH11 pinout, PEMH11 application, or PEMH11 equivalent, this device is selected for compact dual-transistor logic-level signal translation where built-in biasing eliminates external resistors, reduces BOM count, and supports high-density SMT assembly on FR4 boards.

Technical Context

The PEMH11 integrates two matched NPN transistors with monolithically embedded base bias networks-each with R1 = 10 kΩ (input resistor) and R2 = 10 kΩ (feedback resistor), yielding R2/R1 = 1.0 ±0.2. Its dual-emitter-grounded topology enables independent control of each transistor's base via dedicated inputs (I1, I2) and collector outputs (O1, O2).

Designed for digital switching-not linear amplification-it exhibits VI(on) = 1.8–2.5 V and VI(off) = 0.8–1.1 V at 25 °C, ensuring robust noise margin in 3.3 V and 5 V logic systems. Thermal resistance is 417 K/W (per device, FR4 PCB), supporting continuous operation up to 150 °C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - Maximum safe collector-emitter voltage with open base; defines absolute upper rail for digital switching applications.
IO 100 mA - Continuous DC output current per transistor; sufficient for driving LEDs, small relays, or logic inputs.
R1 / R2 10 kΩ / 10 kΩ - Integrated base bias resistors eliminate need for external components and reduce layout area by ~20% per channel.
hFE 30 min - Minimum DC current gain at 5 V VCE, 5 mA IC; ensures reliable saturation with ≤0.5 mA base drive.
VCE(sat) 150 mV max - Low saturation voltage at IC = 10 mA, IB = 0.5 mA; minimizes power loss and self-heating in active switching.
fT 230 MHz typ - Transition frequency confirms suitability for fast digital edge rates up to ~10–20 MHz switching.

Pinout & Package

SOT666 is a 6-pin, ultra-small flat-lead surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm, with 0.5 mm pitch and single-sided FR4 mounting compatibility.

Pin/Terminal Circuit Role Design Meaning
1 GND1 Emitter connection for transistor TR1; provides reference node for first channel's current path.
2 I1 Base input for TR1; accepts logic-level voltage (e.g., 3.3 V/5 V) directly without external resistor.
3 O2 Collector output for TR2; sinks current when TR2 is active; routed to load or next-stage input.
4 GND2 Emitter connection for transistor TR2; independent ground return for second channel.
5 I2 Base input for TR2; electrically isolated from I1; enables independent control of both transistors.
6 O1 Collector output for TR1; complements O2 for dual-signal routing in compact logic interfaces.

Key Features

Feature Design Value
Dual NPN RET architecture Two fully independent, resistor-equipped NPN transistors in one SOT666 footprint-reduces board area vs. discrete dual-transistor solutions by ≥40%.
Matched internal bias network R1 = R2 = 10 kΩ ±30%; ratio tolerance 0.8–1.2 ensures consistent turn-on behavior across channels and temperature.
Low thermal resistance Rth(j-a) = 417 K/W (per device on FR4); enables stable operation at ambient temperatures up to +85 °C without derating.
Logic-compatible input thresholds VI(on) = 1.8–2.5 V and VI(off) = 0.8–1.1 V at 25 °C-guarantees clean switching with standard CMOS/TTL outputs.

Applications

LED Driver Interface Microcontroller GPIO Expander

Use Scenario: Driving multiple low-current indicator LEDs from a microcontroller with limited GPIO count and no external pull-up/pull-down resources.

IC Role / Device Role: Dual-channel active-low switch translating MCU logic outputs into LED sink paths.

Use Value: Eliminates four external 10 kΩ base resistors and saves 2.5 mm² PCB area versus discrete transistors.

Use Scenario: Extending I/O capability of an ARM Cortex-M0+ MCU in a battery-powered sensor node where BOM cost and size are critical.

IC Role / Device Role: Level-shifting and current-boosting buffer between 1.8 V logic and 3.3 V peripherals.

Use Value: Enables direct connection of two additional digital inputs/outputs without level translators or discrete passives.

Industrial Digital Input Conditioning USB-C Port Power Control

Use Scenario: Debouncing and isolating 24 V industrial PLC digital inputs using optocoupler-compatible current limiting.

IC Role / Device Role: Preconditioning stage converting noisy 24 V signals into clean 3.3 V logic levels for MCU sampling.

Use Value: Built-in 10 kΩ R1 provides precise current limiting to optocoupler LED; eliminates risk of resistor mismatch.

Use Scenario: Controlling VBUS enable/disable sequencing for USB-C downstream ports in portable docking stations.

IC Role / Device Role: Dual-channel gate driver for two independent load switches managing 5 V/20 V VBUS rails.

Use Value: Simultaneous, independently timed control of two power domains with <100 ns inter-channel skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PEMD3 PNP/NPN complement; identical SOT666 package, same R1/R2 values, but opposite polarity per channel. Required where one channel must source current (e.g., high-side LED anode drive) while the other sinks. Select PEMD3 only when mixed-polarity switching is needed; not interchangeable with PEMH11 in same circuit.
PEMB11 PNP/PNP configuration; same package, bias resistor values, and ratings-but both transistors are PNP. Used in high-side switching topologies (e.g., PMOS gate control) where emitter-follower sourcing is required. Choose PEMB11 for dual high-side drive; incompatible with PEMH11's low-side sink architecture.

Compared with PEMD3 and PEMB11, the PEMH11 uniquely supports dual low-side switching with matched NPN characteristics-making it optimal for sink-driven logic interfacing, whereas alternatives serve complementary sourcing roles requiring different PCB layout and biasing strategy.

Availability

PEMH11 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, industrial digital input conditioning, and USB-C port power control requiring stable component supply and long-term production continuity.

Supply support for PEMH11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.

The PEMH11 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically for reducing passive count and improving layout efficiency in digital interface and peripheral driver circuits.

FAQ

What is the maximum allowable continuous current per channel?

The PEMH11 supports 100 mA DC output current per transistor under recommended operating conditions (Tamb ≤ 85 °C, FR4 PCB). At 100 mA and typical VCE(sat) of 150 mV, power dissipation per channel is 15 mW-well within the 300 mW per-device limit. Derating is required above 85 °C ambient per the published power derating curve.

Can PEMH11 be used in analog amplifier configurations?

No-the PEMH11 is not characterized or specified for linear amplification. Its hFE is guaranteed only at switching test points (e.g., VCE = 5 V, IC = 5 mA), and its built-in resistors fix base biasing for digital on/off operation. Analog use would result in unpredictable gain, distortion, and thermal instability due to lack of bias adjustability.

Is the SOT666 package compatible with standard reflow soldering profiles?

Yes-Nexperia specifies reflow soldering as the only recommended method for SOT666. The package supports JEDEC J-STD-020-compliant lead-free reflow profiles, with peak temperature ≤ 260 °C and time above liquidus ≤ 60 seconds. Footprint dimensions and solder paste stencil recommendations are provided in Figure 11 of the datasheet.

How does the R2/R1 ratio affect switching behavior?

The R2/R1 ratio of 1.0 ±0.2 sets the internal feedback factor that stabilizes base current during saturation. A ratio near unity ensures predictable VI(on) and VI(off) thresholds across temperature and process variation-critical for noise immunity in industrial environments. Deviations outside 0.8–1.2 may cause inconsistent turn-on timing or increased leakage in off-state.

PEMH11,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
10kOhms
Resistor - Emitter Base (R2):
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
300mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-666

PEMH11,115 FAQ

1.How can I place an order for PEMH11,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PEMH11,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PEMH11,115 reliable?

The price and inventory of PEMH11,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMH11,115 is usually 5 days.

3.What payment methods are accepted for PEMH11,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMH11,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PEMH11,115?

PEMH11,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PEMH11,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PEMH11,115?

For technical support, including PEMH11,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMH11,115 requirements.

6.How does Aetrix verify that PEMH11,115 is sourced from the original manufacturer or authorized distributors?

All PEMH11,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMH11,115 meets industry standards.

7.What is the process for return or replacement of PEMH11,115?

All PEMH11,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMH11,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PEMH11,115 part is unused and in its original packaging.

Return procedure for PEMH11,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PEMH11,115 Tags

  • PEMH11,115
  • PEMH11,115 PDF
  • PEMH11,115 Datasheet
  • PEMH11,115 Specifications
  • PEMH11,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PEMH11,115
  • Buy PEMH11,115
  • PEMH11,115 Price
  • PEMH11,115 Distributor
  • PEMH11,115 Supplier
  • PEMH11,115 Wholesale
Related Products
SMUN5311DW1T1G
SMUN5311DW1T1G

onsemi

UMH9NTN
UMH9NTN

Rohm Semiconductor

PUMH13,115
PUMH13,115

Nexperia USA Inc.

PUMD3-QX
PUMD3-QX

Nexperia USA Inc.

PUMD2,115
PUMD2,115

Nexperia USA Inc.

RN4987FE,LF(CT
RN4987FE,LF(CT

Toshiba Semiconductor and Storage

PUMD12,115
PUMD12,115

Nexperia USA Inc.

PUMD9,115
PUMD9,115

Nexperia USA Inc.

PUMH9,115
PUMH9,115

Nexperia USA Inc.

PUMD3,115
PUMD3,115

Nexperia USA Inc.

DCX114EU-7-F
DCX114EU-7-F

Diodes Incorporated

PUMD13,115
PUMD13,115

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER