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Nexperia USA Inc. PEMH1,115
- Part No.:
- PEMH1,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMH1,115.pdf
- Description:
- TRANS PREBIAS 2NPN 50V SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
PEMH1 from Nexperia is an NPN/NPN resistor-equipped double transistor (RET) in SOT666 package, integrating two matched transistors with built-in 22 kΩ input bias resistors (R1 = R2) per channel. It delivers 100 mA output current per transistor, supports VCEO = 50 V, and exhibits hFE ≥ 60 at IC = 5 mA - designed for digital logic interfacing and low-current peripheral driving in space-constrained PCB layouts.
For engineers reviewing the PEMH1 datasheet, PEMH1 pinout, PEMH1 application, or PEMH1 equivalent, this device serves as a drop-in replacement for discrete dual-transistor + resistor networks in level-shifting, bus buffering, and microcontroller GPIO expansion circuits where component count reduction and layout simplification are critical.
Technical Context
The PEMH1 integrates two independent NPN transistors, each with dedicated base-input resistors (R1, R2) and emitter-grounded configuration. Its internal resistor ratio R2/R1 = 1.0 ± 0.2 ensures matched switching thresholds across both channels under 25 °C ambient conditions.
Each transistor operates within absolute maximum ratings of VCEO = 50 V, VEBO = 10 V, and Ptot = 200 mW per transistor (300 mW per device), with thermal resistance Rth(j-a) = 417 K/W when mounted on FR4 PCB - enabling reliable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V industrial control rails and 3.3/5 V logic-level interfaces with margin. |
| IO | 100 mA - Continuous output current per transistor; sufficient for driving LEDs, small relays, or logic inputs without external current amplification. |
| hFE | ≥60 at VCE = 5 V, IC = 5 mA - Ensures stable saturation with low base drive (e.g., 0.5 mA base current yields ≥30 mA collector current). |
| R1 / R2 | 22 kΩ ±30% - Integrated bias resistors eliminate need for external pull-up/pull-down components; reduces BOM count by 4 passive parts per channel. |
| VCE(sat) | ≤150 mV at IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss and heat generation in switching applications. |
| fT | 230 MHz - Transition frequency supports high-speed digital switching up to ~10–20 MHz edge rates in clean signal paths. |
Pinout & Package
SOT666 ultra-small flat-lead plastic package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height; optimized for high-density reflow assembly with standard footprint per Figure 11.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emitter connection for TR1 - must be tied to system ground or common reference for proper biasing of first transistor. |
| 2 | I1 | Base input for TR1 - accepts TTL/CMOS logic-level signals directly; internal R1 provides current-limiting and pull-down function. |
| 3 | O2 | Collector output for TR2 - active-high sink output; connects to load between VCC and O2. |
| 4 | GND2 | Emitter connection for TR2 - independent ground node; allows separate grounding or shared return path depending on noise isolation needs. |
| 5 | I2 | Base input for TR2 - electrically identical to I1; supports synchronous or independent control of second channel. |
| 6 | O1 | Collector output for TR1 - primary switched output; complements O2 for dual-channel buffer or complementary drive configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN RET architecture | Two fully isolated transistor channels with matched R1/R2 bias network - eliminates inter-channel crosstalk and enables independent signal routing. |
| Integrated 22 kΩ bias resistors | Reduces required PCB area by >0.5 mm² per channel versus discrete resistor+transistor solution; eliminates solder joint reliability risk from passive placement. |
| 100 mA per-channel output | Supports direct driving of optocoupler inputs, small solenoids, or LED strings without external driver stages - cuts bill-of-materials cost by ≥2 components per channel. |
| SOT666 footprint compatibility | Matches JEDEC MO-220 standards; enables automated pick-and-place with <10 µm placement tolerance - improves yield in high-volume SMT production. |
Applications
| Industrial PLC I/O Expansion | Microcontroller GPIO Buffering |
|---|---|
|
Use Scenario: Adding isolated digital outputs to compact programmable logic controllers using limited PCB real estate. IC Role / Device Role / Timing Role: Dual-channel level translator and current amplifier - converts 3.3 V MCU outputs to 24 V sinking outputs with precise timing (<100 ns propagation delay). Use Value: Replaces four discrete transistors and four resistors with one SOT666 device, reducing layout area by 65% and assembly cost by 30%. |
Use Scenario: Protecting low-drive-strength microcontroller pins from capacitive loads and ESD during USB peripheral enumeration. IC Role / Device Role / Timing Role: Bidirectional signal conditioner - isolates MCU pins while maintaining fast edge integrity for I²C/SPI clock lines. Use Value: Built-in R1/R2 ensures consistent turn-on/turn-off thresholds across temperature (±10% variation), eliminating timing skew in multi-sensor systems. |
| LED Matrix Row Driver | Automotive Body Control Module Interface |
|
Use Scenario: Driving 8×8 monochrome LED matrix rows with multiplexed scanning at 1 kHz refresh rate. IC Role / Device Role / Timing Role: High-side switch controller - sinks row current (≤80 mA per row) while maintaining uniform brightness via matched hFE across channels. Use Value: Matched R2/R1 = 1.0 ±0.2 ensures ≤5% current mismatch between rows, preventing visible luminance variation in displays. |
Use Scenario: Interfacing legacy 12 V automotive sensors (e.g., door latch switches) to 3.3 V CAN microcontrollers. IC Role / Device Role / Timing Role: Voltage-level translator and ESD-hardened input buffer - clamps transients up to ±10 V while preserving logic state fidelity. Use Value: VEBO = 10 V and VI(off) = 0.8 V enable robust detection of open-circuit vs. grounded sensor states without false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVD2101PT3G | Single-channel RET with R1 = 10 kΩ, R2 = 4.7 kΩ; SOT-363 package; lower VCEO = 40 V. | Limited to ≤3.3 V logic domains; unsuitable for 24 V industrial I/O due to reduced breakdown margin. | Select only when board space permits larger SOT-363 footprint and system voltage remains ≤15 V. |
| EMH10T2R | Same SOT666 package but PNP/NPN configuration; R1 = 47 kΩ, R2 = 10 kΩ; asymmetric gain profile. | Requires inverted logic drive for one channel; incompatible with symmetrical dual-buffer designs. | Choose only for mixed-signal level translation where complementary output polarity is required. |
Compared with NSVD2101PT3G and EMH10T2R, PEMH1 offers matched NPN/NPN topology, symmetric 22 kΩ biasing, and 50 V VCEO - making it uniquely suitable for non-inverting dual-channel digital interface applications requiring voltage margin and channel consistency.
Availability
PEMH1 is available at Aetrix Electronics and suitable for industrial PLC I/O expansion, microcontroller GPIO buffering, and LED matrix row driving requiring stable component supply across extended temperature ranges and high-volume production cycles.
Supply support for PEMH1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering performance, efficiency, and scalability for automotive, industrial, and consumer markets.
PEMH1 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce design complexity and manufacturing cost in digital interface and peripheral driver applications.
FAQ
What is the maximum operating temperature for PEMH1?
The PEMH1 has a specified junction temperature limit of 150 °C and an ambient operating range of −55 °C to +150 °C. When mounted on a standard FR4 PCB with single-sided copper, its thermal resistance is 417 K/W per device, allowing continuous operation at full 100 mA load up to +85 °C ambient with appropriate board layout.
Can PEMH1 replace two separate BC847B transistors with external 22 kΩ resistors?
Yes - PEMH1 replaces two BC847B transistors plus four 22 kΩ resistors (two base pull-ups, two base pull-downs) in a single SOT666 package. Its integrated R1/R2 values match typical BC847B bias networks, and its hFE ≥60 meets or exceeds BC847B's minimum gain, ensuring functional equivalence without layout redesign.
Is PEMH1 qualified for automotive applications?
No - PEMH1 is explicitly marked as non-automotive qualified in the official Nexperia datasheet revision history. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond 150 °C junction. For automotive use, consider Nexperia's AUTOMOTIVE-grade RETs such as PUMH10.
What is the meaning of "R2/R1 = 1.0" in the datasheet?
This ratio indicates that the internal feedback resistor (R2) equals the input bias resistor (R1) within ±20% tolerance at 25 °C. In practice, it ensures matched threshold voltages between the two transistor channels, enabling synchronized switching behavior and balanced current sharing in dual-output configurations.
PEMH1,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 22kOhms
- Resistor - Emitter Base (R2):
- 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMH1,115 FAQ
1.How can I place an order for PEMH1,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMH1,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMH1,115 reliable?
The price and inventory of PEMH1,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMH1,115 is usually 5 days.
3.What payment methods are accepted for PEMH1,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMH1,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMH1,115?
PEMH1,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMH1,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMH1,115?
For technical support, including PEMH1,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMH1,115 requirements.
6.How does Aetrix verify that PEMH1,115 is sourced from the original manufacturer or authorized distributors?
All PEMH1,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMH1,115 meets industry standards.
7.What is the process for return or replacement of PEMH1,115?
All PEMH1,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMH1,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMH1,115 part is unused and in its original packaging.
Return procedure for PEMH1,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMH1,115 Tags
-
SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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