My Inquiry
My Account
Nexperia USA Inc. PEMH13,115
- Part No.:
- PEMH13,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMH13,115.pdf
- Description:
- TRANS PREBIAS 2NPN 50V SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:6,975
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PEMH13 from Nexperia is an NPN/NPN resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with integrated bias resistors R1 = 4.7 kΩ and R2 = 47 kΩ (R2/R1 = 10), used to drive low-current digital logic inputs and replace discrete BJT pairs in space-constrained peripheral interface circuits.
For engineers reviewing the PEMH13 datasheet, PEMH13 pinout, PEMH13 application, or PEMH13 equivalent, this device is selected for compact dual-transistor switching where built-in biasing eliminates external resistors, reduces PCB footprint, and simplifies level-shifting or signal inversion in microcontroller I/O expansion and sensor interface stages.
Technical Context
The PEMH13 integrates two independent NPN transistors on a single die, each with dedicated base biasing networks (R1 and R2) enabling direct TTL/CMOS-compatible input drive without external pull-up or base resistors. Its dual-output configuration supports cascaded or parallel switching topologies.
It operates within −65 °C to +150 °C ambient range, with per-transistor power dissipation limited to 200 mW and per-device limit of 300 mW on FR4 PCB; thermal resistance is 625 K/W (per transistor) and 417 K/W (per device) in free air.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 3.3 V, 5 V, and 24 V logic-level interfaces with margin. |
| IO | 100 mA - Continuous DC output current per transistor; sufficient for driving LEDs, small relays, or logic gate inputs. |
| R1 | 4.7 kΩ - Input bias resistor value; sets base current for predictable turn-on at standard logic high levels (e.g., 3.3 V or 5 V). |
| R2/R1 ratio | 10 - Fixed internal feedback ratio; ensures stable saturation and prevents unintended conduction under noise or leakage. |
| hFE | 100 - Minimum DC current gain at VCE = 5 V, IC = 10 mA; guarantees reliable saturation with ≤0.25 mA base drive. |
| VCE(sat) | 100 mV - Collector-emitter saturation voltage at IC = 5 mA, IB = 0.25 mA; minimizes power loss and heating in switching mode. |
| fT | 230 MHz - Transition frequency at VCE = 5 V, IC = 10 mA; supports fast digital switching up to ~10–20 MHz edge rates. |
Pinout & Package
SOT666 plastic surface-mount package: 6-lead, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height; ultra-flat profile optimized for high-density PCB layouts and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1; common reference node for first transistor's current path. |
| 2 | I1 | Base input for TR1; accepts logic-level signals directly due to integrated R1/R2 network. |
| 3 | O2 | Collector output for TR2; active-high sink output when TR2 is switched on. |
| 4 | GND2 | Emiter connection for TR2; independent ground return for second transistor. |
| 5 | I2 | Base input for TR2; electrically isolated from I1, enabling independent control of both transistors. |
| 6 | O1 | Collector output for TR1; provides complementary output channel to O2 for dual-signal routing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN RET architecture | Two matched, isolated NPN transistors with factory-trimmed R1/R2 networks-eliminates manual resistor selection and layout mismatch. |
| Integrated bias network | R1 = 4.7 kΩ, R2 = 47 kΩ per transistor-enables direct connection to 3.3 V/5 V MCU GPIOs without external components. |
| Ultra-small SOT666 footprint | 1.6 mm × 1.2 mm area-reduces board space by >60% versus two discrete SOT23 transistors plus four resistors. |
| Low VCE(sat) and high hFE | 100 mV saturation voltage and ≥100 current gain-ensures full turn-on with minimal base drive, reducing MCU I/O loading. |
Applications
| Microcontroller I/O Expansion | Optocoupler Input Stage |
|---|---|
|
Use Scenario: Expanding limited GPIO count on ARM Cortex-M0+ or RISC-V MCU to drive multiple LED indicators or enable lines. IC Role / Device Role / Timing Role: Dual low-side switch providing independent, resistor-biased digital outputs synchronized to MCU clock domain. Use Value: Reduces bill-of-materials by eliminating 4 external resistors and saves 2.5 mm² PCB area versus discrete solution. |
Use Scenario: Conditioning digital signals before feeding into optocoupler LED anodes in isolated industrial communication interfaces. IC Role / Device Role / Timing Role: Level-shifting and current-limiting driver ensuring consistent forward current (≈5–10 mA) into optocoupler input. Use Value: Maintains <100 ns propagation delay while guaranteeing 50 V isolation barrier compatibility via VCEO rating. |
| Sensor Signal Conditioning | Logic-Level Translation |
|
Use Scenario: Interfacing open-collector sensor outputs (e.g., Hall effect or reed switches) to 3.3 V microcontroller inputs. IC Role / Device Role / Timing Role: Active pull-up and signal inversion stage converting floating or weakly driven signals into clean CMOS-compatible levels. Use Value: Built-in R1/R2 prevents floating inputs and eliminates need for external pull-ups, improving ESD robustness and noise immunity. |
Use Scenario: Translating 5 V TTL signals to 3.3 V logic thresholds in mixed-voltage embedded systems (e.g., legacy peripherals connected to modern SoCs). IC Role / Device Role / Timing Role: Voltage-threshold translator using saturated NPN switching to clamp output at ~0.1 V low and ~3.3 V high. Use Value: Achieves sub-10 ns rise/fall times with fT = 230 MHz, supporting UART, SPI, and I²C bus speeds up to 10 Mbps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMD13 | PNP/PNP complement; same package and bias values but inverted polarity. | Used where active-high sourcing (vs. active-low sinking) is required, e.g., high-side LED drivers or PMOS gate control. | Select PEMD13 only when circuit topology demands sourcing capability or negative logic compatibility. |
| EMH13 (ROHM) | Same SOT666 pinout, 50 V/100 mA rating, but R1 = 10 kΩ, R2 = 100 kΩ (R2/R1 = 10); slightly lower hFE min = 80. | Compatible in most digital switching roles but requires verification of base drive margin at 3.3 V due to higher R1. | Prefer PEMH13 when operating near minimum supply voltage (e.g., 3.0 V brown-out conditions) due to lower R1 and guaranteed hFE ≥100. |
Compared with PEMD13 and EMH13, PEMH13 offers optimal base drive sensitivity for 3.3 V logic, superior current gain consistency across temperature, and tighter R1 tolerance (±28% vs ±30%), making it preferred for high-reliability, low-voltage digital interface designs.
Availability
PEMH13 is available at Aetrix Electronics and suitable for microcontroller I/O expansion, optocoupler input staging, sensor signal conditioning, and logic-level translation requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for PEMH13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The PEMH13 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce component count and improve reliability in digital interface and peripheral driver applications.
FAQ
Is PEMH13 suitable for 3.3 V logic interfacing?
Yes. With R1 = 4.7 kΩ and VI(on) typ. 0.9 V at IC = 5 mA, PEMH13 reliably switches at 3.3 V supply, delivering ≥0.6 mA base current and ensuring hFE ≥100 saturation. VI(off) ≤0.6 V guarantees clean turn-off with standard CMOS low-level outputs.
Can PEMH13 replace two separate BC847B transistors?
Yes, provided the application uses NPN low-side switching with fixed bias. PEMH13 integrates matching R1/R2 networks and shares thermal coupling, offering better gain tracking and 40% smaller footprint than two BC847Bs plus four resistors-but lacks independent emitter connections for current-mirror configurations.
What is the maximum safe operating frequency for PWM switching?
At IC = 10 mA, fT = 230 MHz supports clean square-wave switching up to ~20 MHz. Practical PWM limits are governed by VCE(sat) stability and thermal derating: continuous 100 mA operation requires ≤50% duty cycle above 75 °C ambient to stay within 200 mW per transistor limit.
Does PEMH13 require external decoupling capacitors?
No. As a passive-switching discrete device with no internal regulation or oscillation circuitry, PEMH13 does not require decoupling. However, local 100 nF ceramic capacitance near the SOT666 pads is recommended to suppress PCB trace inductance during fast edge transitions and reduce EMI in high-speed digital interfaces.
PEMH13,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMH13,115 FAQ
1.How can I place an order for PEMH13,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMH13,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMH13,115 reliable?
The price and inventory of PEMH13,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMH13,115 is usually 5 days.
3.What payment methods are accepted for PEMH13,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMH13,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMH13,115?
PEMH13,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMH13,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMH13,115?
For technical support, including PEMH13,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMH13,115 requirements.
6.How does Aetrix verify that PEMH13,115 is sourced from the original manufacturer or authorized distributors?
All PEMH13,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMH13,115 meets industry standards.
7.What is the process for return or replacement of PEMH13,115?
All PEMH13,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMH13,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMH13,115 part is unused and in its original packaging.
Return procedure for PEMH13,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMH13,115 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
