Nexperia USA Inc. PEMH13,315

Overview

PEMH13 from Nexperia is a dual NPN resistor-equipped transistor (RET) in SOT666 package, featuring built-in bias resistors R1 = 4.7 kΩ and R2 = 47 kΩ, 50 V V_CEO, 100 mA output current per transistor, and optimized for digital switching in space-constrained PCBs.

For engineers reviewing the PEMH13 datasheet, PEMH13 pinout, PEMH13 application, or PEMH13 equivalent, this device serves as a drop-in replacement for discrete base-biased transistor pairs in low-current logic interfacing, peripheral driving, and IC input control-where reduced component count and simplified layout are critical.

Technical Context

The PEMH13 integrates two matched NPN transistors with on-die bias networks: each channel includes a 4.7 kΩ input resistor (R1) and a 47 kΩ feedback resistor (R2), yielding a fixed R2/R1 ratio of 10. It operates with open-base V_CEO = 50 V and supports DC current gain (h_FE) ≥100 at I_C = 10 mA, V_CE = 5 V.

Designed for digital switching-not linear amplification-it delivers V_CE(sat) ≤100 mV at I_C = 5 mA / I_B = 0.25 mA and exhibits VI(on) = 0.9–1.3 V and VI(off) = 0.5–0.6 V, enabling reliable TTL/CMOS-level signal translation without external biasing.

Key Specifications

Pinout & Package

SOT666 is a 6-pin, ultra-small flat-lead surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm, with 0.5 mm pitch and single-sided FR4 PCB mounting compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN resistor-equipped transistor applications.

Compared with PEMD13, PEMH13 provides matched NPN-NPN switching ideal for parallel load control, whereas EMH13 delivers higher voltage tolerance and power handling-making it suitable for harsher environments without changing layout.

Availability

PEMH13 is available at Aetrix Electronics and suitable for LED indicator systems, microcontroller GPIO expansion, logic-level translation, and peripheral enable control requiring stable component supply and guaranteed long-term manufacturability.

Supply support for PEMH13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.

The PEMH13 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in cost- and space-sensitive digital interface applications.

FAQ

What is the maximum ambient temperature at which PEMH13 can operate continuously?

The PEMH13 is rated for continuous operation from −65 °C to +150 °C ambient temperature. At full 100 mA per channel and 25 °C ambient, total device power dissipation must remain ≤300 mW; derating begins above 25 °C per the 417 K/W junction-to-ambient thermal resistance curve shown in Figure 1.

Can PEMH13 be used in analog amplifier configurations?

No-PEMH13 is not characterized or specified for linear amplification. Its datasheet provides only digital switching parameters (V_CE(sat), h_FE min, VI(on)/VI(off)), and the integrated R1/R2 network fixes bias points unsuitable for stable Class-A operation. Use discrete transistors like BC847 for amplification.

Is the SOT666 package compatible with standard automated pick-and-place equipment?

Yes-the SOT666 package has standardized 0.5 mm pitch, coplanar leads, and defined land patterns (per Figure 11), and is supported by major placement machines including Fuji NXT and Yamaha YSM20. Stencil design must follow Nexperia's recommended solder paste volume (0.12 mm thickness, 80% area ratio).

Does PEMH13 require external decoupling capacitors when switching at high frequency?

Not for basic digital switching up to 10 MHz. The device's low collector capacitance (C_c = 2.5 pF) and fast intrinsic switching (t_off < 100 ns) minimize ringing. However, a 100 nF ceramic capacitor placed within 3 mm of each GND pin is recommended when driving inductive loads or operating near f_T (230 MHz) to suppress supply bounce.