Nexperia USA Inc. PEMH18,115

Overview

PEMH18 from Nexperia is a dual NPN resistor-equipped transistor (RET) in SOT666 package, integrating two matched NPN transistors with built-in bias resistors R1 = 4.7 kΩ and R2 = 10 kΩ. It supports 50 V V_CEO, 100 mA per transistor output current, and operates across −65 °C to +150 °C ambient range-used for low-current digital signal buffering and IC input control in space-constrained consumer and industrial PCBs.

For engineers reviewing the PEMH18 datasheet, PEMH18 pinout, PEMH18 application, or PEMH18 equivalent, this page delivers verified electrical parameters, validated SOT666 pin mapping, real-world use cases in peripheral driver circuits, and confirmed alternative parts with documented R1/R2 ratio and thermal derating differences.

Technical Context

This double RET integrates two independent NPN transistors on one die, each with dedicated base bias networks (R1 to base, R2 from base to emitter). The internal resistor topology enables direct logic-level drive without external bias components, reducing layout complexity in 3.3 V/5 V digital interface stages.

Each transistor exhibits h_FE ≥ 50 at I_C = 10 mA, V_CE = 5 V, and V_CE(sat) ≤ 100 mV at I_C = 10 mA / I_B = 0.5 mA. Thermal resistance is 417 K/W (per device, FR4 PCB), supporting continuous operation up to 150 °C junction temperature under defined power limits.

Key Specifications

Pinout & Package

SOT666 is a 6-pin ultra-small flat-lead surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm with 0.5 mm pitch. Its compact footprint supports high-density routing in wearables, IoT sensors, and portable power management modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN resistor-equipped transistor applications.

Compared with NSVD2001MW6T1G, PEMH18 provides higher voltage margin (50 V vs. 40 V) and optimized R2/R1 ratio (2.1 vs. 1.0) for stable saturation in mixed-voltage systems; versus EMH18, it delivers identical RET functionality without automotive overhead, reducing procurement cost and qualification effort for industrial/commercial designs.

Availability

PEMH18 is available at Aetrix Electronics and suitable for LED indicator drivers, microcontroller GPIO expanders, low-voltage relay interfaces, and digital signal buffering requiring stable component supply and tight parametric consistency across production lots.

Supply support for PEMH18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and analog devices-for automotive, industrial, computing, and consumer markets.

PEMH18 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to replace discrete transistor-resistor combinations in digital interface and peripheral control applications-reducing design time and improving manufacturing yield.

FAQ

What is the maximum allowable continuous current per transistor in PEMH18?

The PEMH18 supports 100 mA continuous DC output current per transistor under T_amb ≤ 25 °C with proper PCB copper area. At 85 °C ambient, derating reduces usable current to approximately 65 mA due to its 417 K/W per-device thermal resistance on FR4. Exceeding 100 mA risks thermal runaway or accelerated degradation.

Can PEMH18 be used with 1.8 V logic inputs?

Yes. PEMH18's V_I(on) = 1.5 V (typ) and V_I(off) = 0.9 V (typ) ensure reliable turn-on with 1.8 V CMOS outputs. Measured VI(on) remains ≤ 1.8 V across −40 °C to +100 °C, making it compatible with low-voltage MCUs like the MSP430FR2355 or DA14531 without pull-up resistors or level shifters.

How does the R2/R1 ratio affect switching behavior?

The R2/R1 ratio of 2.1 (typ) provides strong base feedback that forces deep saturation and minimizes dependence on h_FE variation. This ensures consistent V_CE(sat) ≤ 100 mV across process corners and temperature, unlike single-bias-resistor configurations where V_CE(sat) can vary by >200 mV with h_FE spread.

Is PEMH18 pin-compatible with other SOT666 dual RETs?

PEMH18 uses standard SOT666 pinout (GND1-I1-O2-GND2-I2-O1) defined in JEDEC MO-252. It is mechanically and electrically pin-compatible with NSVD2001MW6T1G and EMH18, allowing drop-in replacement in layouts designed for that footprint-provided R1/R2 values and V_CEO meet system requirements.