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Nexperia USA Inc. PEMH9,115
- Part No.:
- PEMH9,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMH9,115.pdf
- Description:
- TRANS PREBIAS 2NPN 50V SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:4,910
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Product details
Overview
PEMH9 from Nexperia is an NPN/NPN resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It functions as a dual digital switching element for low-current logic interfacing and peripheral control in space-constrained PCBs.
For engineers reviewing the PEMH9 datasheet, PEMH9 pinout, PEMH9 application, or PEMH9 equivalent, this device is selected for compact dual-transistor logic-level translation, IC input driving, and replacement of discrete BJT pairs where board area and assembly cost are critical.
Technical Context
The PEMH9 integrates two identical NPN transistors, each with monolithically embedded base bias resistors (R1 to base, R2 from base to emitter), enabling direct TTL/CMOS-compatible input drive without external components. Its dual configuration supports independent or cascaded switching paths.
Designed for digital signal conditioning, it operates within −55 °C to +150 °C ambient range, delivers 100 mA continuous output per channel, and maintains stable hFE ≥ 100 at IC = 5 mA, VCE = 5 V, Tamb = 25 °C - confirming suitability for reliable low-power logic interface duty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom for 3.3 V/5 V logic systems. |
| IO | 100 mA - Continuous output current per transistor; supports driving LEDs, small relays, or logic inputs without external current boosting. |
| R1 | 10 kΩ (7–13 kΩ) - Input bias resistor value; sets base current for predictable turn-on with standard logic high levels (≥1.4 V). |
| R2/R1 ratio | 4.7 (3.7–5.7) - Ensures stable saturation and noise immunity by fixing feedback-to-input resistance ratio. |
| hFE | ≥100 - DC current gain at 5 mA collector current; guarantees sufficient drive margin for saturated switching in digital applications. |
| VCE(sat) | ≤100 mV - Low saturation voltage at IC = 5 mA, IB = 0.25 mA; minimizes power loss and heat generation during on-state operation. |
| fT | 230 MHz - Transition frequency; confirms adequate bandwidth for fast digital edge handling up to ~10–20 MHz toggle rates. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height; ultra-small footprint optimized for high-density routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1; common reference node for first transistor's current path. |
| 2 | I1 | Input (base) for TR1; accepts logic-level signals directly without series resistor. |
| 3 | O2 | Collector output for TR2; active-high sink/source node when TR2 is switched. |
| 4 | GND2 | Emiter connection for TR2; isolated ground return for second transistor. |
| 5 | I2 | Input (base) for TR2; independently controllable logic input with internal R1/R2 bias network. |
| 6 | O1 | Collector output for TR1; primary switching node for first transistor, electrically separate from O2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN RET topology | Two matched, resistor-equipped NPN transistors in single die; eliminates layout mismatch and reduces interconnect parasitics between paired BJTs. |
| Built-in R1/R2 bias network | R1 = 10 kΩ, R2 = 47 kΩ per transistor; enables direct connection to 3.3 V/5 V logic outputs while ensuring robust saturation and noise rejection. |
| Ultra-compact SOT666 package | 1.6 mm × 1.2 mm footprint; saves >60% board area versus two discrete SOT23 transistors plus four bias resistors. |
| 100 mA per-channel rating | Rated continuous output current supports LED drivers, buffer stages, and microcontroller GPIO expanders without derating at 25 °C. |
Applications
| LED Indicator Driver | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving multiple status LEDs from limited MCU I/O pins with minimal external components. IC Role / Device Role / Timing Role: Dual low-side switch providing independent current-sinking paths for red/green dual-color indicators or multi-segment displays. Use Value: Eliminates need for eight discrete resistors and two transistors; reduces BOM count by 6 parts and PCB area by 2.5 mm² per channel pair. | Use Scenario: Extending digital output capability of resource-constrained MCUs (e.g., ARM Cortex-M0+, PIC16F) for sensor enable lines or peripheral reset control. IC Role / Device Role / Timing Role: Level-shifting and current-boosting buffer for open-drain or weak-drive GPIOs, supporting 5 V tolerant loads from 3.3 V cores. Use Value: Enables direct 3.3 V logic control of 5 V peripherals with guaranteed VCE(sat) ≤ 100 mV, minimizing voltage drop and timing skew. |
| Logic-Level Translator | Low-Power Sensor Interface |
Use Scenario: Bidirectional level shifting between 1.8 V FPGA I/O banks and 3.3 V sensor subsystems using push-pull configurations. IC Role / Device Role / Timing Role: Active pull-up/pull-down switch implementing voltage-domain bridging without direction control pins or external biasing. Use Value: Achieves <10 ns propagation delay with R1/R2-defined hysteresis, supporting 10 MHz data rates while consuming <5 µA quiescent current per channel. | Use Scenario: Enabling/disabling analog sensors (e.g., temperature, humidity) via microcontroller-controlled power gating to reduce system standby current. IC Role / Device Role / Timing Role: Low-leakage (ICEO ≤ 5 µA at 150 °C) high-side or low-side load switch managing sensor VDD rail. Use Value: Cuts sensor supply leakage by >99% vs. passive resistive pull-down; supports industrial-grade thermal operation up to 150 °C junction temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMB9 | PNP/PNP complement; same SOT666 package, identical R1/R2 values, but inverted polarity. | Required for high-side switching or complementary logic where sourcing current is needed instead of sinking. | Select PEMB9 only when circuit topology demands PNP-based active-high output or rail-to-rail inversion. |
| PEMD9 | NPN/PNP configuration; shares SOT666 footprint and bias resistor values, but channels differ in polarity. | Suitable for push-pull driver stages or differential input buffering requiring matched turn-on/off characteristics across polarities. | Choose PEMD9 when building complementary output stages or interfacing with differential receivers needing matched threshold behavior. |
Compared with PEMB9 and PEMD9, the PEMH9 provides matched NPN/NPN switching symmetry ideal for parallel load driving or duplicated logic paths - whereas PEMB9 suits high-side control and PEMD9 enables true push-pull operation, making selection dependent on required current direction and output logic polarity.
Availability
PEMH9 is available at Aetrix Electronics and suitable for LED indicator systems, microcontroller GPIO expansion, logic-level translation, and low-power sensor interface applications requiring stable component supply and consistent parametric performance across production batches.
Supply support for PEMH9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, computing, consumer, and communications markets.
The PEMH9 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete BJT-resistor combinations in digital interface and peripheral driving applications - reducing design complexity and manufacturing cost.
FAQ
What is the maximum operating temperature for PEMH9?
The PEMH9 has a specified junction temperature limit of 150 °C and an ambient operating range of −55 °C to +150 °C. Its thermal resistance is 417 K/W (per device on FR4 PCB), allowing sustained operation at full 100 mA load up to +85 °C ambient with proper layout - verified per IEC 60134 limiting values.
Can PEMH9 be used in automotive applications?
No - the PEMH9 is explicitly marked as non-automotive qualified in its revision history and legal disclaimers. It lacks AEC-Q101 qualification, automotive-grade screening, and extended reliability testing. For automotive use, Nexperia offers qualified alternatives such as the PUMH9 family, which undergoes full automotive qualification.
How does the R2/R1 ratio affect switching behavior?
The R2/R1 ratio of 4.7 ensures stable base bias feedback that prevents thermal runaway and improves noise immunity. With R1 = 10 kΩ and R2 = 47 kΩ, the effective base current is regulated to maintain VBE ≈ 0.7 V under typical drive conditions, guaranteeing consistent saturation across process and temperature variations.
Is there crosstalk between the two transistors in PEMH9?
No measurable functional crosstalk exists - the transistors share only substrate and thermal coupling, not electrical nodes. Electrical isolation between channels is confirmed by independent pinning (separate GND1/GND2, O1/O2, I1/I2) and characterization showing no signal coupling in switching transient tests per Nexperia's application notes and SPICE models.
PEMH9,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMH9,115 FAQ
1.How can I place an order for PEMH9,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMH9,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMH9,115 reliable?
The price and inventory of PEMH9,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMH9,115 is usually 5 days.
3.What payment methods are accepted for PEMH9,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMH9,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMH9,115?
PEMH9,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMH9,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMH9,115?
For technical support, including PEMH9,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMH9,115 requirements.
6.How does Aetrix verify that PEMH9,115 is sourced from the original manufacturer or authorized distributors?
All PEMH9,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMH9,115 meets industry standards.
7.What is the process for return or replacement of PEMH9,115?
All PEMH9,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMH9,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMH9,115 part is unused and in its original packaging.
Return procedure for PEMH9,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMH9,115 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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