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Nexperia USA Inc. PQMD12Z
- Part No.:
- PQMD12Z
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PQMD12Z.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP 50V 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,052
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Product details
Overview
PQMD12Z from Nexperia is a dual NPN/PNP resistor-equipped transistor (RET) in a DFN1010B-6 (SOT1216) package, integrating two matched transistors with built-in 47 kΩ bias resistors (R1 = R2 = 47 kΩ) per channel. It delivers 100 mA output current per transistor, supports ±50 V collector-emitter voltage, and is AEC-Q101 qualified for automotive signal switching and level translation.
For engineers reviewing the PQMD12Z datasheet, PQMD12Z pinout, PQMD12Z application, or PQMD12Z equivalent, this device serves as a space-optimized, bias-resistor-integrated replacement for discrete BJT pairs in low-power digital interface and peripheral driver circuits-particularly where board height (<0.37 mm), component count reduction, and automotive-grade reliability are critical.
Technical Context
The PQMD12Z integrates one NPN and one PNP silicon transistor on a single die, each with dedicated base biasing networks (R1 and R2) configured as standard resistor-equipped transistor topology. The internal R2/R1 ratio is tightly controlled at 0.8–1.2 (typ. 1.0), enabling predictable turn-on/off thresholds across temperature.
It operates with VI(on) = 1.6–3.0 V (NPN) and –1.6 to –3.0 V (PNP), VI(off) = 0.8–1.2 V (NPN) and –0.8 to –1.2 V (PNP), and achieves hFE ≥ 80 at IC = 5 mA, supporting robust digital switching without external bias components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V max per transistor - enables safe operation in 24 V automotive and industrial logic-level interfaces. |
| IO | 100 mA max per transistor - sufficient for driving LEDs, small relays, or logic inputs without external current amplification. |
| R1 / R2 | 47 kΩ ±29% (33–61 kΩ) - provides standardized base biasing, eliminating need for external resistors in digital switch applications. |
| R2/R1 Ratio | 0.8–1.2 (typ. 1.0) - ensures matched input threshold behavior between NPN and PNP channels for complementary switching. |
| VCE(sat) | ≤150 mV at IC = 10 mA, IB = 0.5 mA - minimizes conduction loss and self-heating in high-duty-cycle digital control paths. |
| fT | 230 MHz (NPN), 180 MHz (PNP) - supports reliable switching up to ~10–20 MHz, suitable for fast GPIO buffering and clock enable gating. |
| Ptot (per device) | 350 mW at Tamb ≤ 25 °C - allows dual-channel operation under moderate thermal load on standard FR4 PCBs. |
Pinout & Package
DFN1010B-6 (SOT1216) is a leadless, ultra-thin (0.37 mm max height), thermally enhanced plastic package with 6 terminals, optimized for high-density automated assembly and improved thermal performance over traditional SOT packages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN transistor); common reference node for first channel. |
| 2 | I1 | Base input for TR1 (NPN); accepts TTL/CMOS-compatible logic levels with built-in R1/R2 network. |
| 3 | O2 | Collector output for TR2 (PNP); active-low switching node with open-collector capability. |
| 4 | GND2 | Emiter connection for TR2 (PNP); independent ground return for second channel. |
| 5 | I2 | Base input for TR2 (PNP); accepts inverted logic signals; complements TR1 for push-pull or level-shifting use. |
| 6 | O1 | Collector output for TR1 (NPN); active-high switching node; used for sourcing current to loads. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control modules and body electronics requiring extended temperature (-55 °C to +150 °C) and reliability compliance. |
| Ultra-low profile (0.37 mm) | Enables use in slim portable devices (e.g., wearables, IoT sensors) where Z-height constraints prohibit SOIC or SOT-23 packages. |
| Dual complementary RET topology | Integrates matched NPN+PNP pair with identical R1/R2 values, simplifying bidirectional interface design without discrete resistor matching. |
| Reduced pick-and-place cost | Single placement replaces two transistors + four bias resistors, cutting placement time and feeder setup in high-volume SMT lines. |
| Thermal resistance (Rth(j-a)) | 357 K/W (per device on FR4) - improves power handling margin vs. discrete equivalents in compact layouts. |
Applications
| Automotive Door Module Control | USB-C Port Power Switching |
|---|---|
|
Use Scenario: Driving window lock/unlock solenoids and mirror position actuators via microcontroller GPIO in door control units. IC Role / Device Role / Timing Role: Dual-channel level translator and current buffer; NPN switches 12 V loads high-side, PNP handles low-side sinking with shared ground isolation. Use Value: Eliminates four external resistors and two discrete transistors, reducing BOM count by 6 parts while maintaining AEC-Q101 compliance and <0.4 mm profile. |
Use Scenario: Enabling/disabling VBUS power path and CC line termination in USB-C receptacle circuits. IC Role / Device Role / Timing Role: Complementary switch controlling power MOSFET gate drive and CC pull-up/down resistors based on orientation detection logic. Use Value: Enables single-package implementation of bidirectional control with matched input thresholds (VI(on)/VI(off)), minimizing layout asymmetry and timing skew. |
| Industrial PLC Digital Input Conditioning | Smartphone Camera Actuator Driver |
|
Use Scenario: Converting 24 V field sensor signals to 3.3 V MCU-compatible logic levels with noise immunity and current limiting. IC Role / Device Role / Timing Role: Input stage translator with built-in bias network; PNP input accepts 24 V sink, NPN outputs clean 3.3 V logic to microcontroller. Use Value: Replaces optocoupler + resistor network with lower propagation delay (<100 ns), higher reliability, and no LED aging concerns. |
Use Scenario: Driving voice coil motor (VCM) focus actuators and OIS coils using PWM-controlled current steering in compact camera modules. IC Role / Device Role / Timing Role: Low-current H-bridge pre-driver; NPN/PNP pair controls direction and enables/disables current path with minimal footprint. Use Value: Fits within 1.0 × 1.0 mm PCB area budget; 100 mA rating supports peak actuator currents; 0.37 mm height avoids lens stack interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual RET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVD2101PT1G | Single-channel NPN RET (no PNP), R1 = 22 kΩ, R2 = 47 kΩ; SOT-363 package (1.3 mm height). | Lacks complementary PNP channel; requires separate PNP device for bidirectional control. | Select when only unidirectional switching is needed and board height >1.0 mm is acceptable. |
| UMX23T1G | Dual NPN RET (no PNP), R1 = R2 = 47 kΩ; same DFN1010B-6 package but no complementary topology. | Cannot implement true push-pull or level inversion without additional components. | Prefer for cost-sensitive designs needing only NPN switching with identical footprint and biasing. |
Compared with NSVD2101PT1G and UMX23T1G, PQMD12Z uniquely delivers matched NPN+PNP functionality in the smallest available footprint (1.0 × 1.0 mm, 0.37 mm height), enabling true complementary switching without layout compromise or BOM expansion.
Availability
PQMD12Z is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery subsystems, industrial PLC I/O modules, and smartphone camera actuator drivers requiring stable component supply, AEC-Q101 compliance, and ultra-compact packaging.
Supply support for PQMD12Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.
The PQMD12Z belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete BJT-resistor combinations in space-constrained, high-reliability digital interface applications.
FAQ
Is PQMD12Z pin-compatible with other DFN1010B-6 RETs like UMT23T1G?
No. PQMD12Z uses a unique 6-pin pinout (GND1-I1-O2-GND2-I2-O1) optimized for complementary operation. UMT23T1G has different pin assignments (e.g., emitter-collector-base ordering) and is dual-NPN only. Direct substitution would cause functional failure due to incorrect terminal mapping and missing PNP channel.
Can PQMD12Z drive a 50 mA LED directly from a 3.3 V GPIO?
Yes. With VI(on) = 1.6–3.0 V and IO = 100 mA max, PQMD12Z's NPN channel (O1 output) can sink up to 50 mA at VCE(sat) ≤ 150 mV when driven by a 3.3 V logic signal at I1. No external base resistor is required-the 47 kΩ R1 network ensures proper biasing and prevents GPIO overload.
What is the maximum operating frequency for PWM switching with PQMD12Z?
Based on fT = 230 MHz (NPN) and measured switching times (ton/toff < 20 ns typical), PQMD12Z supports clean PWM operation up to 10–20 MHz in low-load conditions. For 50% duty cycle at 100 mA, practical limit is ~5 MHz to maintain <10% duty distortion and thermal stability on FR4.
Does PQMD12Z require special PCB layout considerations for thermal performance?
Yes. To achieve rated 350 mW total power dissipation, the DFN1010B-6 package must be mounted on an FR4 PCB with the recommended solder land pattern (1.1 × 0.6 mm pads, 0.35 mm spacing) and at least 20 mm² of copper pour connected to pins 1 and 4 (GND1/GND2) for heat spreading. Avoid thermal isolation under the package body.
PQMD12Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- Frequency - Transition:
- 230MHz, 180MHz
- Power - Max:
- 350mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PQMD12Z FAQ
1.How can I place an order for PQMD12Z through Aetrix?
Please submit a Request for Quotation (RFQ) for PQMD12Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PQMD12Z reliable?
The price and inventory of PQMD12Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PQMD12Z is usually 5 days.
3.What payment methods are accepted for PQMD12Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PQMD12Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PQMD12Z?
PQMD12Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PQMD12Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PQMD12Z?
For technical support, including PQMD12Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PQMD12Z requirements.
6.How does Aetrix verify that PQMD12Z is sourced from the original manufacturer or authorized distributors?
All PQMD12Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PQMD12Z meets industry standards.
7.What is the process for return or replacement of PQMD12Z?
All PQMD12Z units undergo pre-shipment inspection (PSI). If there is an issue with PQMD12Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PQMD12Z part is unused and in its original packaging.
Return procedure for PQMD12Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PQMD12Z Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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