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Nexperia USA Inc. PQMH10Z
- Part No.:
- PQMH10Z
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PQMH10Z.pdf
- Description:
- TRANS PREBIAS 2NPN DFN1010B-6
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
PQMH10 from Nexperia is a dual NPN resistor-equipped transistor (RET) in a DFN1010B-6 (SOT1216) package, integrating two matched NPN transistors with built-in bias resistors R1 = 2.2 kΩ and R2 = 47 kΩ. It delivers 100 mA per transistor output current, supports 50 V collector-emitter voltage, and is AEC-Q101 qualified for automotive use - deployed in low-current peripheral drivers and IC input control circuits.
For engineers reviewing the PQMH10 datasheet, PQMH10 pinout, PQMH10 application, or PQMH10 equivalent, this device is selected for space-constrained digital switching where reduced component count, simplified base drive, and ultra-thin 0.37 mm profile are critical - especially in mobile and automotive body-control modules.
Technical Context
The PQMH10 integrates two independent NPN transistors on a single die, each with dedicated input (base), output (collector), and ground (emitter) terminals. Bias network topology includes R1 (input resistor) and R2 (feedback resistor), yielding a fixed R2/R1 ratio of 21 (typical), enabling predictable saturation behavior without external bias components.
Its DFN1010B-6 package features thermal-enhanced construction with 357 K/W junction-to-ambient resistance (per device) on FR4 PCB, supporting continuous operation up to 150 °C junction temperature. The device operates within −55 °C to +150 °C ambient range and meets AEC-Q101 stress test requirements for automotive discrete semiconductors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V maximum - ensures safe operation in 24 V automotive supply rails with margin against transients. |
| IO | 100 mA per transistor - sufficient to drive LED indicators, small relays, or logic-level inputs directly. |
| R1 | 2.2 kΩ ±30% - sets base current magnitude for predictable turn-on at standard logic-high voltages (e.g., 3.3 V or 5 V). |
| R2/R1 | 21 (typical), 17–26 range - defines feedback ratio that stabilizes operating point and improves noise immunity. |
| Ptot (per device) | 350 mW at Tamb ≤ 25 °C - enables compact layout without forced cooling in low-duty-cycle switching. |
| hFE | ≥100 at IC = 10 mA, VCE = 5 V - guarantees robust current gain across industrial temperature range (−40 °C to +125 °C). |
| VCE(sat) | ≤100 mV at IC = 5 mA, IB = 0.25 mA - minimizes conduction loss and self-heating in battery-powered systems. |
Pinout & Package
DFN1010B-6 (SOT1216) is a leadless, ultra-thin surface-mount package measuring 1.1 mm × 1.0 mm × 0.37 mm with 0.35 mm pitch and exposed thermal pad (not electrically connected). Its low profile and thermal enhancement support high-density routing and improved power dissipation on standard FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emitter connection for transistor TR1 - reference node for first switch channel. |
| 2 | I1 | Base input for TR1 - driven by logic signal through internal R1 resistor. |
| 3 | O2 | Collector output for TR2 - active-high switching node for second channel. |
| 4 | GND2 | Emitter connection for transistor TR2 - independent reference for second switch channel. |
| 5 | I2 | Base input for TR2 - logic-driven input with identical R1/R2 bias network as I1. |
| 6 | O1 | Collector output for TR1 - primary switching output, electrically isolated from O2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN RET integration | Two independent, resistor-biased NPN transistors in one 1.1 mm × 1.0 mm footprint - eliminates four external resistors and reduces PCB area by >60% vs discrete solutions. |
| AEC-Q101 qualification | Qualified per Automotive Electronics Council stress test standard - validated for under-hood and body-control applications requiring long-term reliability at 150 °C junction temperature. |
| Ultra-low package height | 0.37 mm max - enables use in ultra-thin mobile devices and stacked PCB assemblies where Z-axis clearance is constrained. |
| Thermal performance | 357 K/W Rth(j-a) (per device on FR4) - supports higher sustained current than comparable SOT-363 packages without heatsinking. |
| Input voltage thresholds | VI(on) = 0.75 V (min), VI(off) = 0.6 V (typ) - ensures clean logic-level compatibility with 1.8 V, 3.3 V, and 5 V microcontrollers without level-shifting. |
Applications
| Automotive Body Control | Mobile LED Driver |
|---|---|
|
Use Scenario: Driving door lock actuators, mirror position controls, and interior lighting in 12 V/24 V vehicle networks. IC Role / Device Role / Timing Role: Dual-channel low-side switch replacing discrete BJT + resistor combinations for independent load control. Use Value: Reduces BOM count by 4 passive components per channel while maintaining AEC-Q101 compliance and thermal margin at 85 °C ambient. |
Use Scenario: Controlling status LEDs and backlight segments in smartphones, wearables, and portable medical devices. IC Role / Device Role / Timing Role: Constant-current switch enabling fast on/off transitions with minimal board space. Use Value: 0.37 mm height allows placement beneath display modules; 100 mA rating supports multi-LED strings without external current limiting. |
| Industrial Sensor Interface | IoT Peripheral Driver |
|
Use Scenario: Level-shifting and isolation between MCU GPIOs and 5 V sensor outputs or optocoupler inputs in factory automation nodes. IC Role / Device Role / Timing Role: Digital buffer and signal conditioner with built-in biasing for noise-immune signal transmission. Use Value: R2/R1 = 21 ratio provides stable DC operating point, reducing susceptibility to ESD-induced latch-up in unshielded environments. |
Use Scenario: Enabling/disabling USB-C port power switches, SIM card detectors, and SD card presence sensing in edge gateways. IC Role / Device Role / Timing Role: Low-power enable switch with <1 µA leakage (ICEO) ensuring zero-load standby current. Use Value: 100 nA ICBO and −55 °C to +150 °C operation guarantee reliable wake-up signaling across extended environmental conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PQMD10 | NPN/PNP complement with identical R1/R2 values and DFN1010B-6 package - offers complementary switching for push-pull or H-bridge configurations. | Required where bidirectional current flow or level inversion is needed (e.g., half-bridge motor control). | Select when circuit requires both sourcing and sinking capability; not interchangeable for same-polarity switching. |
| EMH9 | Single-channel NPN RET in SOT-363 (3.0 mm × 1.7 mm); R1 = 4.7 kΩ, R2 = 10 kΩ; lower current rating (50 mA). | Suitable only for lower-power logic buffering where board space is less constrained. | Choose only if dual-channel functionality is unnecessary and legacy SOT-363 footprint must be retained. |
Compared with PQMD10, PQMH10 enables true dual-NPN parallel drive without polarity inversion; versus EMH9, it doubles channel count and increases output current by 100% while shrinking footprint area by 85%, making it optimal for next-generation space- and power-sensitive designs.
Availability
PQMH10 is available at Aetrix Electronics and suitable for automotive body electronics, mobile LED control, industrial sensor interfaces, and IoT peripheral management requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for PQMH10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a leading global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices optimized for efficiency, miniaturization, and automotive-grade robustness.
The PQMH10 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete BJT-resistor combinations in digital switching applications while meeting stringent AEC-Q101 and space-constrained design requirements.
FAQ
Is PQMH10 pin-compatible with other DFN1010B-6 devices?
No - PQMH10 has a unique 6-pin assignment (GND1/I1/O2/GND2/I2/O1) defined in its datasheet. While the DFN1010B-6 outline is standardized, pin functions vary across manufacturers and part numbers; direct substitution requires verification of both pin mapping and electrical characteristics.
What is the maximum allowable peak current for PQMH10?
The absolute maximum peak collector current (ICM) is 100 mA per transistor, as specified in Table 5. Exceeding this value, even briefly, risks permanent damage due to localized thermal runaway or bond-wire fusing - pulse operation must remain within this limit regardless of duty cycle.
Can PQMH10 be used in linear amplifier mode?
No - PQMH10 is designed and characterized exclusively for digital switching operation. Its built-in resistor network fixes bias conditions unsuitable for linear gain control, and parameters like hFE and VCE(sat) are specified only under saturated switching conditions, not analog amplification.
Does PQMH10 require external decoupling capacitors?
Not for basic switching operation - the integrated bias resistors provide inherent noise filtering. However, for high-speed switching (>1 MHz) or noisy supply environments, a 100 nF ceramic capacitor placed near the GND1/GND2 pins improves stability by reducing ground bounce and transient coupling between channels.
PQMH10Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 230MHz
- Power - Max:
- 350mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PQMH10Z FAQ
1.How can I place an order for PQMH10Z through Aetrix?
Please submit a Request for Quotation (RFQ) for PQMH10Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PQMH10Z reliable?
The price and inventory of PQMH10Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PQMH10Z is usually 5 days.
3.What payment methods are accepted for PQMH10Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PQMH10Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PQMH10Z?
PQMH10Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PQMH10Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PQMH10Z?
For technical support, including PQMH10Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PQMH10Z requirements.
6.How does Aetrix verify that PQMH10Z is sourced from the original manufacturer or authorized distributors?
All PQMH10Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PQMH10Z meets industry standards.
7.What is the process for return or replacement of PQMH10Z?
All PQMH10Z units undergo pre-shipment inspection (PSI). If there is an issue with PQMH10Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PQMH10Z part is unused and in its original packaging.
Return procedure for PQMH10Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PQMH10Z Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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