NXP Semiconductors PQMH9Z

Overview

PQMH9 from Nexperia is a dual NPN resistor-equipped transistor (RET) in a DFN1010B-6 (SOT1216) package, integrating two matched NPN transistors with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It delivers 100 mA per transistor output current, supports 50 V collector-emitter voltage, and is AEC-Q101 qualified for automotive use - deployed in low-current peripheral driver circuits and IC input control.

For engineers reviewing the PQMH9 datasheet, PQMH9 pinout, PQMH9 application, or PQMH9 equivalent, this device is selected for space-constrained digital logic interfacing where reduced component count, ultra-thin profile (0.37 mm), and thermal-enhanced SMD mounting are critical design requirements.

Technical Context

The PQMH9 integrates two independent NPN transistors, each with dedicated base-input resistors (R1) and base-to-emitter feedback resistors (R2), enabling direct TTL/CMOS-level drive without external biasing. Its dual-channel configuration supports synchronous or isolated switching functions within a single 1.1 mm × 1.0 mm footprint.

Each transistor exhibits DC current gain (hFE) ≥100 at IC = 5 mA, VCE = 5 V, and collector-emitter saturation voltage (VCEsat) ≤100 mV at IC = 5 mA / IB = 0.25 mA. The R2/R1 ratio of 4.7 ±1.0 ensures stable turn-on behavior across temperature (−40 °C to +150 °C).

Key Specifications

Pinout & Package

DFN1010B-6 (SOT1216) is a 6-terminal, leadless, thermally enhanced ultra-thin plastic package with 0.35 mm pitch and exposed thermal pad (not electrically connected). Dimensions: 1.1 mm × 1.0 mm × 0.37 mm body height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN resistor-equipped transistor applications.

Compared with NSVD2T2232MUTAG and EMH12T2R, the PQMH9 uniquely balances dual-channel integration, 10 kΩ input impedance, and AEC-Q101 qualification - making it optimal for automotive and space-constrained dual-signal applications where reliability and layout efficiency are jointly prioritized.

Availability

PQMH9 is available at Aetrix Electronics and suitable for automotive body electronics, smartphone peripheral control, industrial sensor interface boards, and USB-C power delivery support circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PQMH9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete, logic, and MOSFET devices - founded in 2017 as a spin-off from NXP, now serving automotive, industrial, and consumer markets.

The PQMH9 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce bill-of-materials complexity and PCB area in digital interface and low-power switching applications.

FAQ

What is the maximum continuous current per channel for PQMH9?

The PQMH9 supports 100 mA continuous output current per transistor under Tamb ≤ 25 °C with FR4 PCB mounting. Derating applies above 25 °C per the 350 mW per-device power dissipation limit and thermal resistance of 357 K/W junction-to-ambient.

Can PQMH9 be used with 1.8 V logic inputs?

Yes - VI(on) is specified at 0.8 V (min) and 1.4 V (max) at IC = 10 mA, ensuring reliable turn-on from 1.8 V CMOS outputs. VI(off) is 0.5 V (typ), providing adequate noise margin against ground bounce in mixed-signal environments.

Is the thermal pad on the DFN1010B-6 package electrically connected?

No - the exposed thermal pad in the DFN1010B-6 (SOT1216) package is not electrically connected to any internal node. It serves only for thermal conduction to the PCB and must be soldered to a copper pour for optimal heat dissipation.

How does the R2/R1 ratio affect switching behavior?

The R2/R1 ratio of 4.7 sets the internal base current division, directly determining the transistor's saturation depth and turn-off speed. A higher ratio improves saturation but slows turn-off; PQMH9's 4.7 ratio balances low VCEsat (<100 mV) with acceptable switching transition times for digital logic rates up to 10 MHz.