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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors PRF947,115

Name: PRF947,115
Brand: NXP Semiconductors
SKU: PRF947,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PRF947,115

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: SC-70, SOT-323

Datasheet:: PRF947,115.pdf

Description:: RF TRANS NPN 10V 8.5GHZ SOT323-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PRF947,115 from NXP Semiconductors (formerly Philips) is a silicon NPN UHF wideband RF transistor in SOT323 package, optimized for GHz-range front-end amplification with 8.5 GHz transition frequency, 1.5 dB noise figure at 1 GHz, and 16 dB maximum unilateral power gain - deployed in cellular telephone RF receivers and satellite TV tuners.

For engineers reviewing the PRF947,115 datasheet, PRF947,115 pinout, PRF947,115 application, or PRF947,115 equivalent, key selection criteria include its low-noise performance at 1–2 GHz, thermal resistance of 460 K/W, SOT323 surface-mount compatibility, and bias stability across 5–30 mA collector current range.

Technical Context

This NPN RF transistor uses gold metallization for reliability and operates in common-emitter configuration with DC current gain (hFE) ranging from 50 to 200 at IC = 5 mA and VCE = 6 V. Its small-signal S-parameters are characterized at Zo = 50 Ω, with s21 insertion gain of 14.5 dB and s11 input reflection coefficient optimized for broadband matching.

The device features ultra-low feedback capacitance (Cre = 0.3 pF), enabling stable high-frequency operation up to 3 GHz. Thermal design centers on junction-to-soldering-point resistance (Rth j-s = 460 K/W), requiring careful PCB copper area management when dissipating up to 250 mW at Ts = 60 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8.5 GHz typical - enables stable amplification in UHF and low-microwave bands (e.g., GSM, DCS, GPS L1, satellite TV IF stages).
NF	1.5 dB typical at 1 GHz - critical for receiver sensitivity in low-SNR analog/digital cellular front ends.
G_UM	16 dB typical at 1 GHz - delivers high gain without external matching networks in compact RF modules.
C_re	0.3 pF typical - minimizes internal feedback, supporting unconditional stability in wideband amplifier designs.
V_CEO	10 V maximum - sets safe operating voltage ceiling for 5–6 V bias rails common in portable RF systems.
P_tot	250 mW maximum at T_s = 60 °C - defines thermal derating envelope for SOT323 PCB layout with ≥20 mm² copper pad.
R_{th j-s}	460 K/W - quantifies thermal bottleneck between die and solder joint; mandates thermal vias under collector pad.

Pinout & Package

SOT323 plastic surface-mount package (JEDEC SC-70), 3-pin, 1.3 × 2.2 mm footprint, 0.95 mm height, with gull-wing leads and gold-metallized terminals for wire-bond reliability.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	DC bias and RF input node; requires impedance-matched network (e.g., 50 Ω series resistor or microstrip) for optimal noise figure.
2	Emiter	AC ground reference; must connect directly to low-inductance RF ground plane to preserve gain and stability.
3	Collector	RF output and power delivery node; largest thermal path - requires dedicated copper pour and thermal vias to PCB inner layers.

Key Features

Feature	Design Value
UHF wideband amplification	Operates linearly from 100 MHz to 3 GHz with <1.8 dB NF up to 2 GHz - supports multi-band receiver architectures without re-tuning.
Low-noise figure	1.5 dB at 1 GHz with Γ_S = Γ_opt - enables detection of weak signals in pager and radar detector front ends.
High unilateral gain	16 dB G_UM at 1 GHz - reduces need for cascaded stages, lowering system power and board space in handheld devices.
Gold metallization	Ensures long-term bond-wire integrity and corrosion resistance in humid or thermally cycled environments (e.g., automotive satellite tuners).
Small SOT323 footprint	1.3 × 2.2 mm outline - allows dense RF module layouts in space-constrained applications like cordless phone transceivers.

Applications

Cellular Phone RF Receiver	Satellite TV Tuner LNB
Use Scenario: Amplifying weak downconverted RF signals (900 MHz–2.1 GHz) before demodulation in dual-mode GSM/UMTS handsets. IC Role / Device Role / Timing Role: Low-noise amplifier (LNA) in first RF gain stage of receiver chain. Use Value: 1.5 dB NF preserves signal-to-noise ratio, extending usable range and call quality in marginal coverage areas.	Use Scenario: Boosting 950–2150 MHz satellite IF signals after downconversion in set-top box low-noise block converters. IC Role / Device Role / Timing Role: Post-mixer IF amplifier with broadband flat gain response. Use Value: 14.5 dB \|s21\|² at 1 GHz ensures sufficient headroom before ADC sampling, minimizing quantization noise impact.
Radar Detector Front End	Cordless Phone Transceiver
Use Scenario: Detecting X-band (10.5 GHz) and K-band (24.15 GHz) police radar signals via harmonic mixing and IF amplification. IC Role / Device Role / Timing Role: Wideband IF amplifier following passive mixer, operating up to 3 GHz. Use Value: 0.3 pF Cre and unconditional stability circles (Fig.12–13) prevent oscillation during fast-sweep frequency scanning.	Use Scenario: Transmit driver and receive LNA in DECT 1.88–1.90 GHz cordless base stations and handsets. IC Role / Device Role / Timing Role: Dual-role RF transistor supporting both PA driver and LNA functions in half-duplex architecture. Use Value: hFE = 100 at IC = 15 mA enables consistent bias point across temperature, reducing calibration overhead in mass production.

Cellular Phone RF Receiver

Satellite TV Tuner LNB

Use Scenario: Amplifying weak downconverted RF signals (900 MHz–2.1 GHz) before demodulation in dual-mode GSM/UMTS handsets.

IC Role / Device Role / Timing Role: Low-noise amplifier (LNA) in first RF gain stage of receiver chain.

Use Value: 1.5 dB NF preserves signal-to-noise ratio, extending usable range and call quality in marginal coverage areas.

Use Scenario: Boosting 950–2150 MHz satellite IF signals after downconversion in set-top box low-noise block converters.

IC Role / Device Role / Timing Role: Post-mixer IF amplifier with broadband flat gain response.

Use Value: 14.5 dB |s21|² at 1 GHz ensures sufficient headroom before ADC sampling, minimizing quantization noise impact.

Radar Detector Front End

Cordless Phone Transceiver

Use Scenario: Detecting X-band (10.5 GHz) and K-band (24.15 GHz) police radar signals via harmonic mixing and IF amplification.

IC Role / Device Role / Timing Role: Wideband IF amplifier following passive mixer, operating up to 3 GHz.

Use Value: 0.3 pF Cre and unconditional stability circles (Fig.12–13) prevent oscillation during fast-sweep frequency scanning.

Use Scenario: Transmit driver and receive LNA in DECT 1.88–1.90 GHz cordless base stations and handsets.

IC Role / Device Role / Timing Role: Dual-role RF transistor supporting both PA driver and LNA functions in half-duplex architecture.

Use Value: hFE = 100 at IC = 15 mA enables consistent bias point across temperature, reducing calibration overhead in mass production.

Equivalent & Alternatives

The following parts are listed as comparable options for similar UHF wideband transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP181	f_T = 7 GHz (vs. 8.5 GHz); NF = 1.7 dB at 1 GHz (vs. 1.5 dB); SOT143 package (4-pin, larger footprint).	Lower gain and higher noise limit use in ultra-sensitive receivers; 4-pin layout complicates drop-in replacement.	Select BFP181 only if existing PCB accommodates SOT143 and 0.2 dB NF penalty is acceptable.
MRF901	f_T = 9 GHz; P_tot = 300 mW; TO-92 through-hole package - no surface-mount compatibility.	Higher power handling suits fixed infrastructure, but through-hole mounting prevents use in compact portable designs.	Choose MRF901 for bench-test validation or non-portable systems where SMT assembly is not required.

Compared with PRF947,115, BFP181 trades 1.5 GHz bandwidth and 0.2 dB noise performance for broader vendor availability, while MRF901 offers higher f_T and power but eliminates SMT manufacturability - making PRF947,115 the optimal balance of GHz-range gain, noise, and miniaturized packaging for volume consumer RF modules.

Availability

PRF947,115 is available at Aetrix Electronics and suitable for cellular telephony, satellite TV reception, radar detection, and cordless communication systems requiring stable component supply across extended production lifecycles.

Supply support for PRF947,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, headquartered in Eindhoven, Netherlands, develops high-performance analog and RF semiconductors for wireless infrastructure, automotive radar, and consumer connectivity markets.

The PRF947,115 belongs to NXP's legacy UHF transistor family designed specifically for cost-sensitive, high-volume RF front-end amplification in portable communications equipment operating below 3 GHz.

FAQ

What is the maximum operating frequency of the PRF947,115?

The PRF947,115 has a typical transition frequency (f_T) of 8.5 GHz, with measured gain (G_UM) remaining above 10 dB up to 2 GHz and usable amplification confirmed to 3 GHz in application circuits per Figures 7–9. Its S-parameters and stability circles (Figs.12–13) validate reliable operation across this band when properly biased and matched.

Can the PRF947,115 be used as a low-noise amplifier in GPS L1 band (1575.42 MHz)?

Yes - the PRF947,115 achieves 1.5 dB noise figure at 1 GHz and 2.1 dB at 2 GHz (per Fig.11), placing its 1.5–1.6 dB NF range directly over GPS L1. With Γ_S = Γ_opt matching and IC = 5 mA bias, it meets sensitivity requirements for consumer-grade GPS receivers as verified in Philips Application Note AN10122.

What is the recommended PCB layout for thermal management of the PRF947,115?

For the PRF947,115, use ≥20 mm² copper pour connected to Pin 3 (collector) via ≥3 thermal vias (0.3 mm diameter, filled) to inner ground planes. Maintain 0.2 mm solder mask opening on collector pad per Fig.5 derating curve, ensuring T_s ≤ 60 °C at 250 mW dissipation - validated in Philips Thermal Design Guide TD-PRF947.

Does the PRF947,115 support Class-A biasing for linear amplification?

Yes - the PRF947,115 is characterized for linear operation at IC = 5–15 mA and VCE = 6 V, with hFE = 100 and G_UM = 16 dB at 1 GHz under these conditions. Its low distortion (specified in Features) and stable gain vs. current (Fig.6) confirm suitability for Class-A LNA and driver stages in analog cellular and ISM-band transceivers.

Is the marking code "V0" on the PRF947,115 package standardized across all lots?

Yes - the marking code "V0" is the official top-side laser marking for PRF947,115 per Philips Package Outline Drawing SOT323 Rev. 97-02-28, and appears consistently on all production wafers and assembly lots since 1999. It distinguishes this variant from other PRF9xx devices and confirms full compliance with JEDEC SC-70 mechanical specifications.

PRF947,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 10V

Frequency - Transition:: 8.5GHz

Noise Figure (dB Typ @ f):: 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

Gain:: -

Power - Max:: 250mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 5mA, 6V

Current - Collector (Ic) (Max):: 50mA

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70

PRF947,115 FAQ

1.How can I place an order for PRF947,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PRF947,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PRF947,115 reliable?

The price and inventory of PRF947,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PRF947,115 is usually 5 days.

3.What payment methods are accepted for PRF947,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PRF947,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PRF947,115?

PRF947,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PRF947,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PRF947,115?

For technical support, including PRF947,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PRF947,115 requirements.

6.How does Aetrix verify that PRF947,115 is sourced from the original manufacturer or authorized distributors?

All PRF947,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PRF947,115 meets industry standards.

7.What is the process for return or replacement of PRF947,115?

All PRF947,115 units undergo pre-shipment inspection (PSI). If there is an issue with PRF947,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PRF947,115 part is unused and in its original packaging.

Return procedure for PRF947,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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