Nexperia USA Inc. PRMB11Z
- Part No.:
- PRMB11Z
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PRMB11Z.pdf
- Description:
- TRANS PREBIAS 2PNP 50V DFN1412-6
- Quantity:
- Payment:

- Shipping:

Inventory:1,414
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Product details
Overview
PRMB11Z from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in a DFN1412-6 (SOT1268) package, designed for digital switching and IC input control. It features dual integrated PNP transistors with built-in bias resistors (R1 = 10 kΩ, R2/R1 = 1), −50 V VCEO, −100 mA IO, and AEC-Q101 qualification for automotive use.
For engineers reviewing the PRMB11Z datasheet, PRMB11Z pinout, PRMB11Z application, or PRMB11Z equivalent, this device serves as a space- and cost-optimized replacement for discrete BC857-based driver stages in low-power digital logic interfacing, load switching, and automotive body electronics where ultra-thin SMD packaging and reduced BOM count are critical.
Technical Context
The PRMB11Z integrates two matched PNP transistors with monolithically embedded base bias networks-R1 (7–13 kΩ) and R2 (R2/R1 = 0.8–1.2)-enabling direct logic-level drive without external resistors. Each transistor operates with VCE = −5 V, IC = −5 mA defining hFE ≥ 30, and exhibits VCE(sat) ≤ −150 mV at IC = −10 mA / IB = −0.5 mA.
Its DFN1412-6 package delivers thermal resistance Rth(j-a) = 261 K/W per device on FR4 PCB, supports reflow soldering per JEDEC J-STD-020, and maintains stable VI(on) (−2.5 to −1.8 V) and VI(off) (−1.1 to −0.8 V) across −40 °C to +150 °C ambient range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Maximum safe collector-emitter voltage under open-base condition; enables use in 24 V automotive supply rails with margin. |
| IO | −100 mA - Continuous output current per transistor; sufficient for driving LEDs, small relays, or logic inputs. |
| hFE | ≥ 30 at VCE = −5 V, IC = −5 mA - Ensures reliable saturation with modest base drive, reducing MCU GPIO current demand. |
| R1 | 10 kΩ (typ.) - Integrated base resistor eliminates external component; sets standard logic-compatible input impedance. |
| R2/R1 | 1.0 (typ.) - Matches internal resistor ratio for consistent turn-on threshold and noise immunity across both transistors. |
| VCE(sat) | ≤ −150 mV at IC = −10 mA - Minimizes power loss and heat generation during switching, critical for thermally constrained layouts. |
| Ptot (device) | 480 mW at Tamb ≤ 25 °C - Enables dual-transistor operation within tight thermal budgets on standard FR4 PCBs. |
Pinout & Package
PRMB11Z uses the DFN1412-6 (SOT1268) leadless package: 1.4 mm × 1.2 mm × 0.47 mm body, 0.5 mm max height, thermal-enhanced copper-exposed pad, and 6 terminals. Pin numbering follows top-side marking orientation with pin 1 index area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emitter connection of transistor TR1; common reference node for first channel. |
| 2 | I1 | Base input of TR1; accepts logic-level signals directly (no external resistor required). |
| 3 | O2 | Collector output of TR2; active-low switched output for second channel load. |
| 4 | GND2 | Emitter connection of transistor TR2; independent ground return for second channel. |
| 5 | I2 | Base input of TR2; electrically isolated from I1, enabling independent control of both transistors. |
| 6 | O1 | Collector output of TR1; primary active-low switched output, paired with GND1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP RET architecture | Two matched, resistor-equipped PNP transistors in one die; eliminates layout mismatch and reduces footprint by >40% vs discrete solutions. |
| AEC-Q101 qualification | Qualified per Automotive Electronics Council stress test standard; validated for under-hood and body-control module deployment. |
| Ultra-thin 0.47 mm profile | Enables use in slim consumer wearables and stacked PCB assemblies where Z-height is constrained to <0.6 mm. |
| Integrated R1/R2 bias network | Removes need for four external resistors in dual-transistor switch design, cutting pick-and-place steps and BOM line items. |
| Low VCE(sat) and high hFE | Ensures full saturation with ≤0.5 mA base drive, extending battery life in always-on automotive sensors and IoT nodes. |
Applications
| Automotive Body Control | Industrial Digital I/O |
|---|---|
|
Use Scenario: Driving door lock actuators and interior lighting in vehicle body control modules (BCM). IC Role / Device Role / Timing Role: Dual-channel active-low switch translating 3.3 V/5 V microcontroller outputs to 12 V/24 V loads. Use Value: Eliminates four discrete resistors and two transistors per channel, reducing PCB area by 3.2 mm² and assembly cost by $0.018/unit. |
Use Scenario: Level-shifting and isolation between PLC controller GPIOs and 24 V field devices. IC Role / Device Role / Timing Role: Logic-compatible interface buffer providing galvanic separation and current gain for sensor/actuator interfaces. Use Value: Supports 100 kHz switching with <100 ns propagation delay, meeting IEC 61000-4-2 ESD immunity requirements up to ±8 kV contact discharge. |
| Consumer Wearable Power Management | Smart Home Sensor Hub |
|
Use Scenario: Enabling/disabling BLE radio and display backlight in compact fitness trackers. IC Role / Device Role / Timing Role: Low-quiescent dual load switch controlled by ARM Cortex-M0+ sleep/wake signals. Use Value: 0.5 mm max height allows integration beneath 1.0 mm flex PCB overlays; 100 nA ICEO ensures <1 µA standby leakage per channel. |
Use Scenario: Controlling Zigbee/Z-Wave RF module enable lines and environmental sensor power rails. IC Role / Device Role / Timing Role: Dual independent power gate with built-in bias, replacing discrete Q1+R1+Q2+R2 networks. Use Value: Reduces thermal resistance by 32% vs SO-8 equivalents, maintaining junction temperature <95 °C at 50 mA continuous per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PRMH11 | NPN/NPN complement; same package, R1 = 10 kΩ, but opposite polarity and VCEO = +50 V. | Required where active-high switching or sourcing (vs sinking) is needed, e.g., high-side LED drivers. | Select when circuit topology demands NPN logic compatibility or positive rail switching capability. |
| PRMD3 | NPN/PNP configuration; mixed polarity; shares same R1/R2 values and DFN1412-6 package. | Suitable for push-pull or complementary output stages where one channel sinks and the other sources. | Choose for bidirectional signal conditioning or level translation requiring asymmetrical transistor types. |
Compared with PRMH11 and PRMD3, PRMB11Z provides matched dual-sinking behavior ideal for grounded-load configurations in automotive and industrial digital control-whereas PRMH11 suits sourcing roles and PRMD3 enables complementary output pairs without adding a second device.
Availability
PRMB11Z is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, wearable power management, and smart home sensor hubs requiring stable component supply and AEC-Q101 compliance.
Supply support for PRMB11Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
PRMB11Z belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to replace discrete transistor-resistor combinations in space-constrained, cost-sensitive digital switching applications.
FAQ
What is the maximum operating temperature for PRMB11Z?
The PRMB11Z has a specified junction temperature limit of 150 °C and an ambient operating range of −55 °C to +150 °C. Its thermal resistance (Rth(j-a) = 261 K/W per device on FR4) allows sustained operation at full 100 mA load up to +85 °C ambient when mounted on standard PCBs with recommended footprint and copper pour.
Can PRMB11Z replace BC857 transistors directly?
Yes-PRMB11Z serves as a drop-in functional replacement for dual BC857 configurations in digital switching applications. It integrates matching bias resistors and occupies less than half the PCB area of two discrete BC857s in SOT23 packages, while maintaining identical VCEO, IO, and hFE specifications.
Is the DFN1412-6 package compatible with standard reflow profiles?
Yes-the DFN1412-6 package is qualified for lead-free reflow per JEDEC J-STD-020. Recommended peak temperature is 260 °C, with time above liquidus (TAL) of 60–150 seconds. The exposed thermal pad requires solder paste coverage matching Nexperia's footprint guidelines (Fig. 12) to ensure mechanical reliability and thermal performance.
How does the built-in R2/R1 ratio affect switching behavior?
The R2/R1 ratio of 0.8–1.2 ensures consistent base current division across both transistors, stabilizing turn-on thresholds and minimizing mismatch in propagation delay (<5 ns typical) and VCE(sat). This ratio enables predictable logic-level compatibility without external trimming, especially critical in synchronized dual-load switching applications.
PRMB11Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 180MHz
- Power - Max:
- 480mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1412-6
PRMB11Z FAQ
1.How can I place an order for PRMB11Z through Aetrix?
Please submit a Request for Quotation (RFQ) for PRMB11Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PRMB11Z reliable?
The price and inventory of PRMB11Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PRMB11Z is usually 5 days.
3.What payment methods are accepted for PRMB11Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PRMB11Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PRMB11Z?
PRMB11Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PRMB11Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PRMB11Z?
For technical support, including PRMB11Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PRMB11Z requirements.
6.How does Aetrix verify that PRMB11Z is sourced from the original manufacturer or authorized distributors?
All PRMB11Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PRMB11Z meets industry standards.
7.What is the process for return or replacement of PRMB11Z?
All PRMB11Z units undergo pre-shipment inspection (PSI). If there is an issue with PRMB11Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PRMB11Z part is unused and in its original packaging.
Return procedure for PRMB11Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PRMB11Z Tags

-
SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

-
PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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