Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PRMH2Z

Part No.:
PRMH2Z
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
6-XFDFN Exposed Pad
Datasheet:
AetrixPRMH2Z.pdf
Description:
TRANS PREBIAS 2NPN 50V DFN1412-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,097

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PRMH2 from Nexperia is a dual NPN resistor-equipped transistor (RET) in a DFN1412-6 (SOT1268) package, designed for digital switching and IC input control. It features 50 V VCEO, 100 mA per transistor output current, built-in bias resistors (R1 = 47 kΩ typ., R2/R1 = 1), and AEC-Q101 qualification for automotive use.

For engineers reviewing the PRMH2 datasheet, PRMH2 pinout, PRMH2 application, or PRMH2 equivalent, this device serves as a space- and cost-optimized replacement for discrete BC847/BC857 pairs in low-power digital logic interfacing, load switching, and microcontroller I/O buffering where board area and assembly count are critical.

Technical Context

The PRMH2 integrates two matched NPN transistors with monolithically embedded base bias networks-R1 connected between base and emitter, R2 between base and input-enabling single-resistor drive without external bias components. Each transistor operates independently with shared ground terminals but isolated collectors and inputs.

Its DFN1412-6 package provides thermal enhancement (Rth(j-a) = 261 K/W per device on FR4) and ultra-low profile (0.47 mm body height), supporting high-density automotive and portable electronics layouts where thermal management and mechanical clearance are constrained.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - Maximum collector-emitter voltage before breakdown; supports 24 V automotive rail and 3.3/5 V logic-level switching with margin.
IO 100 mA per transistor - Continuous DC output current capability; sufficient for driving LEDs, small relays, or logic gates.
hFE 80 min at VCE = 5 V, IC = 5 mA - Ensures reliable saturation with low base drive current in digital on/off operation.
R1 47 kΩ typical - Integrated base-emitter resistor enables direct microcontroller GPIO connection without external pull-down.
R2/R1 ratio 1.0 ± 0.2 - Precise internal resistor matching ensures consistent turn-on threshold and noise immunity across both transistors.
VCE(sat) 150 mV max at IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss and self-heating during sustained conduction.
Ptot 480 mW per device at Tamb ≤ 25 °C - Enables dual-transistor operation within compact thermal envelope on standard FR4 PCB.

Pinout & Package

PRMH2 uses the DFN1412-6 (SOT1268) leadless surface-mount package: 1.4 mm × 1.2 mm × 0.47 mm body, 0.5 mm max height, thermally enhanced bottom paddle, no leads.

Pin/Terminal Circuit Role Design Meaning
1 GND1 Emitter terminal of Transistor 1; common reference for TR1 base drive and collector load return path.
2 I1 Base input of Transistor 1; accepts logic-level signal directly from MCU or gate output with built-in R1/R2 network.
3 O2 Collector output of Transistor 2; active-high switch node for driving loads referenced to GND2 or shared supply.
4 GND2 Emitter terminal of Transistor 2; independent ground reference enabling isolated load switching or level translation.
5 I2 Base input of Transistor 2; electrically identical to I1 but isolated; supports dual independent control signals.
6 O1 Collector output of Transistor 1; primary switching node for first load; shares no internal connection with O2.

Key Features

Feature Design Value
Dual NPN RET architecture Two fully independent NPN transistors with integrated R1/R2 bias networks reduce BOM count by up to 8 passive components vs. discrete solutions.
AEC-Q101 qualification Validated for automotive temperature range (−40 °C to +150 °C) and stress testing, enabling use in engine control modules and body electronics.
Ultra-thin DFN1412-6 package 0.47 mm body height and 1.4 mm × 1.2 mm footprint saves >60% board area versus SO-8 or SOT-363 equivalents.
Low VCE(sat) and high hFE 150 mV max saturation voltage and 80+ DC gain ensure full turn-on with ≤0.5 mA base current, compatible with 3.3 V GPIOs.
Matched R2/R1 ratio 0.8–1.2 tolerance guarantees consistent VI(on)/VI(off) thresholds across both transistors, improving timing predictability in dual-control applications.

Applications

Automotive Body Control Module Industrial PLC Input Stage

Use Scenario: Level-shifting and buffering of 12 V sensor signals into 3.3 V microcontroller ADC or GPIO inputs.

IC Role / Device Role / Timing Role: Dual-transistor RET acts as bidirectional digital interface: one channel conditions sensor enable, the other handles fault flag feedback.

Use Value: Eliminates need for separate bias resistors and ESD protection diodes per channel, reducing component count and layout complexity while maintaining AEC-Q101 compliance.

Use Scenario: Isolating and conditioning 24 V industrial fieldbus signals (e.g., RS-485 enable lines) before routing to FPGA or ASIC I/O banks.

IC Role / Device Role / Timing Role: Each transistor functions as a dedicated high-side switch for bus direction control and fault isolation, sharing ground only at PCB level.

Use Value: Independent GND1/GND2 terminals allow galvanic separation between control logic and field-side circuitry, improving noise immunity without optocouplers.

Consumer IoT Sensor Hub Medical Wearable Power Sequencing

Use Scenario: Enabling/disabling multiple low-power sensors (e.g., accelerometer, ambient light) based on MCU sleep/wake state.

IC Role / Device Role / Timing Role: One transistor controls sensor VDD enable; the other manages interrupt line pull-up/pull-down configuration during state transitions.

Use Value: Built-in bias resistors guarantee defined logic states during MCU reset or brown-out, preventing floating inputs and false wake events.

Use Scenario: Sequencing power delivery to analog front-end (AFE) and Bluetooth SoC in battery-powered diagnostic patches.

IC Role / Device Role / Timing Role: Dual RET provides precise, resistor-matched turn-on delays via RC time constants formed with external capacitors on I1/I2 pins.

Use Value: Matched R2/R1 ratio ensures <±5% skew between sequencing edges, meeting tight 100 µs inter-rail delay requirements for low-noise AFE startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PRMD12 NPN/PNP complement with identical package and bias resistor values; VCEO = 50 V, IO = 100 mA, but opposite polarity per channel. Suitable for complementary push-pull outputs or level inversion where one channel requires sourcing and the other sinking. Select when mixed-signal interfacing demands both sourcing and sinking capability in same footprint.
BC847BPDW1T1G Discrete dual NPN in SOT-363; no built-in resistors; requires external bias network; hFE = 200–450, VCEO = 45 V, Ptot = 300 mW. Higher gain and lower VCE(sat), but increases PCB area and assembly cost due to 4 extra resistors and larger package. Choose when maximum current gain or tighter VCE(sat) tolerance is required and board space is not constrained.

Compared with PRMD12, PRMH2 offers matched NPN-NPN behavior ideal for parallel digital control; compared with BC847BPDW1T1G, it trades higher hFE for significant BOM reduction and guaranteed resistor matching-critical for timing-critical dual-channel applications.

Availability

PRMH2 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, and consumer IoT sensor hubs requiring stable component supply, AEC-Q101 compliance, and ultra-compact packaging.

Supply support for PRMH2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and mobile markets.

The PRMH2 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to replace discrete transistor-resistor combinations in digital switching applications while meeting stringent automotive qualification and miniaturization targets.

FAQ

Is PRMH2 pin-compatible with BC847/BC857 dual-transistor arrays?

No-PRMH2 uses a 6-pin DFN1412-6 (SOT1268) package with unique pin assignment (GND1, I1, O2, GND2, I2, O1), whereas BC847/BC857 arrays use SOT-363 or SC-74 packages with different pinouts and no integrated resistors. Direct replacement requires PCB redesign but eliminates four external resistors per channel.

Can PRMH2 be used in linear amplifier configurations?

No-the PRMH2 is optimized for digital switching, not analog amplification. Its built-in bias resistors fix the base operating point, and its hFE specification is given only at IC = 5 mA with no linearity data. Use discrete transistors like BC847B for small-signal amplification.

What is the function of the bottom thermal pad in the DFN1412-6 package?

The exposed copper pad on the underside of the DFN1412-6 package is electrically connected to GND1 and GND2 internally and serves as the primary thermal path. It must be soldered to a large PCB copper pour to achieve the specified Rth(j-a) = 261 K/W and prevent junction overheating at 100 mA continuous load.

Does PRMH2 support 1.8 V logic-level input drive?

Yes-VI(on) is specified at 1.6 V min (typ. 3 V) and VI(off) at 1.2 V max (typ. 0.8 V) at 25 °C, providing adequate noise margin for 1.8 V CMOS logic. At elevated temperatures, VI(on) decreases slightly, ensuring robust turn-on even at −40 °C to +100 °C operating range.

PRMH2Z Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-XFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
47kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
230MHz
Power - Max:
480mW
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1412-6

PRMH2Z FAQ

1.How can I place an order for PRMH2Z through Aetrix?

Please submit a Request for Quotation (RFQ) for PRMH2Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PRMH2Z reliable?

The price and inventory of PRMH2Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PRMH2Z is usually 5 days.

3.What payment methods are accepted for PRMH2Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PRMH2Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PRMH2Z?

PRMH2Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PRMH2Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PRMH2Z?

For technical support, including PRMH2Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PRMH2Z requirements.

6.How does Aetrix verify that PRMH2Z is sourced from the original manufacturer or authorized distributors?

All PRMH2Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PRMH2Z meets industry standards.

7.What is the process for return or replacement of PRMH2Z?

All PRMH2Z units undergo pre-shipment inspection (PSI). If there is an issue with PRMH2Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PRMH2Z part is unused and in its original packaging.

Return procedure for PRMH2Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PRMH2Z Tags

  • PRMH2Z
  • PRMH2Z PDF
  • PRMH2Z Datasheet
  • PRMH2Z Specifications
  • PRMH2Z Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PRMH2Z
  • Buy PRMH2Z
  • PRMH2Z Price
  • PRMH2Z Distributor
  • PRMH2Z Supplier
  • PRMH2Z Wholesale
Related Products
SMUN5311DW1T1G
SMUN5311DW1T1G

onsemi

UMH9NTN
UMH9NTN

Rohm Semiconductor

PUMH13,115
PUMH13,115

Nexperia USA Inc.

PUMD3-QX
PUMD3-QX

Nexperia USA Inc.

PUMD2,115
PUMD2,115

Nexperia USA Inc.

RN4987FE,LF(CT
RN4987FE,LF(CT

Toshiba Semiconductor and Storage

PUMD12,115
PUMD12,115

Nexperia USA Inc.

PUMD9,115
PUMD9,115

Nexperia USA Inc.

PUMH9,115
PUMH9,115

Nexperia USA Inc.

PUMD3,115
PUMD3,115

Nexperia USA Inc.

DCX114EU-7-F
DCX114EU-7-F

Diodes Incorporated

PUMD13,115
PUMD13,115

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER