Nexperia USA Inc. PUMB3H-QF
- Part No.:
- PUMB3H-QF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PUMB3H-QF.pdf
- Description:
- PUMB3H-QF
- Quantity:
- Payment:

- Shipping:

Inventory:2,402
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Product details
Overview
PUMB3H-Q from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT363 (SC-88) package, rated for −50 V VCEO, −100 mA output current per transistor, with built-in 4.7 kΩ base bias resistor (R1) and open R2. It serves as a dual high-temperature switching element in automotive digital control circuits, replacing discrete BC857-based pairs while reducing PCB footprint and assembly cost.
For engineers reviewing the PUMB3H-Q datasheet, PUMB3H-Q pinout, PUMB3H-Q application, or PUMB3H-Q equivalent, this device is selected for AEC-Q101-compliant digital switching where space-constrained dual-PNP logic-level drive, thermal robustness up to 175 °C, and simplified biasing are required - not for linear amplification, high-frequency RF, or power regulation.
Technical Context
This dual RET integrates two matched PNP transistors with dedicated on-die base resistors: R1 = 4.7 kΩ (typical) connected between base and emitter of TR1, while R2 is unconnected (open). Each transistor operates independently with isolated emitters (GND1/GND2), enabling separate load referencing or cascaded switching configurations.
It supports DC switching at ambient temperatures from −55 °C to +175 °C, with junction temperature limited to 175 °C and total device power dissipation up to 360 mW at Tamb ≤ 25 °C on FR4 PCB. Thermal resistance from junction to ambient is 417 K/W (per device), confirming suitability for thermally demanding automotive under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive systems with margin. |
| IO | −100 mA per transistor - Continuous DC output current capability; sufficient for driving LEDs, small relays, or logic inputs. |
| R1 | 4.7 kΩ (typ) - Integrated base bias resistor simplifies gate drive circuitry and eliminates external component placement. |
| Tj max | 175 °C - Junction temperature rating qualified per AEC-Q101; supports operation in engine control units and body electronics. |
| Ptot (device) | 360 mW at Tamb ≤ 25 °C - Total power handling across both transistors on standard FR4 PCB; defines thermal design envelope. |
| hFE | 200 min at IC = −1 mA - DC current gain ensures reliable saturation with low base drive current in digital switching. |
| VCE(sat) | −100 mV max at IC = −10 mA, IB = −0.5 mA - Low saturation voltage minimizes conduction loss and heat generation. |
Pinout & Package
Package: SOT363 (TSSOP6), 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, surface-mount plastic package qualified for automotive reflow and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1; must be tied to local reference ground for TR1 operation. |
| 2 | I1 | Base input for TR1; driven through internal R1; accepts logic-level signals down to VI(off) = −585 mV. |
| 3 | O2 | Collector output for TR2; sinks current when TR2 is active; electrically isolated from O1. |
| 4 | GND2 | Emiter connection for TR2; independent reference node allowing dual-load separation. |
| 5 | I2 | Base input for TR2; no internal resistor (R2 = open); requires external bias network. |
| 6 | O1 | Collector output for TR1; sinks current when TR1 is active; shares package but not electrical path with O2. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1 bias resistor | 4.7 kΩ typ - Eliminates one external resistor per channel, reducing BOM count and layout area. |
| AEC-Q101 qualification | Qualified for automotive applications - Ensures reliability under temperature cycling, humidity, and mechanical stress per industry standard. |
| Dual isolated emitters | GND1 and GND2 pins - Enables independent grounding of each transistor, supporting mixed-voltage or isolated load switching. |
| High-temperature operation | 175 °C junction limit - Allows deployment in engine control modules, transmission controllers, and other under-hood ECUs. |
| Low VCE(sat) | −100 mV max - Reduces power loss during conduction, critical for thermally constrained PCBs and battery-powered modules. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Output Stage |
|---|---|
|
Use Scenario: Driving door lock actuators and interior lighting loads in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: Dual PNP switch providing low-side sinking capability with integrated biasing for microcontroller GPIO interfacing. Use Value: Replaces two BC857 transistors plus four resistors, cutting PCB area by >40% and eliminating pick-and-place steps for bias components. |
Use Scenario: Controlling 24 V solenoid valves and indicator LEDs in factory automation I/O modules. IC Role / Device Role / Timing Role: Dual-channel load switch with independent emitter references, enabling galvanically separated outputs on shared PCB. Use Value: Supports simultaneous switching of two independent 100 mA loads without crosstalk, leveraging isolated GND1/GND2 terminals. |
| Automotive HVAC Control Panel | Smart Sensor Interface Board |
|
Use Scenario: Enabling fan speed control and display backlight dimming via PWM-driven PNP switches. IC Role / Device Role / Timing Role: High-temperature-rated digital switch handling PWM frequencies up to 10 kHz with stable VCE(sat). Use Value: Maintains <200 mV saturation voltage across −40 °C to +125 °C ambient, ensuring consistent PWM duty cycle fidelity. |
Use Scenario: Level-shifting and enabling analog sensor power rails in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Dual enable switch isolating sensor supply domains while sharing MCU GPIO resources. Use Value: Leverages open R2 on TR2 to implement custom bias for precision enable timing, while TR1 uses internal R1 for fast GPIO response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-PNP switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PUMD6H-Q | NPN/PNP RET configuration; R1 = 10 kΩ, R2 = 10 kΩ; VCEO = −50 V, IO = −100 mA | Supports complementary logic drive (e.g., one NPN for pull-down, one PNP for pull-up) rather than dual-sink topology | Select when mixed-polarity switching is needed, such as driving push-pull gates or level translators. |
| BC857BDW1T1G | Discrete dual PNP transistor array; no built-in resistors; VCEO = −45 V, IC = −100 mA; SOT363 package | Requires external base resistors; lacks AEC-Q101 qualification; lower VCEO margin | Choose only for non-automotive cost-sensitive designs where full resistor network control is preferred over integration. |
Compared with PUMD6H-Q and BC857BDW1T1G, PUMB3H-Q uniquely delivers dual-PNP sink functionality with integrated R1 biasing and AEC-Q101 compliance - making it optimal for space- and reliability-critical automotive digital load switching where external resistor omission and high-temperature stability are mandatory.
Availability
PUMB3H-Q is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, and smart sensor interface boards requiring stable component supply with AEC-Q101 assurance and SOT363 footprint compatibility.
Supply support for PUMB3H-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
PUMB3H-Q belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically for automotive-grade digital switching applications where miniaturization, thermal resilience, and manufacturing simplicity are prioritized over general-purpose amplification.
FAQ
Is PUMB3H-Q pin-compatible with BC857BDW1T1G?
No. While both use SOT363 packaging, PUMB3H-Q has internal R1 on Pin 2 (I1) and open R2 on Pin 5 (I2), whereas BC857BDW1T1G has no integrated resistors and identical pin functions across both transistors. Direct replacement requires redesigning base bias networks and verifying VI(off)/VI(on) thresholds.
Can PUMB3H-Q be used in linear amplifier configurations?
No. Its design targets digital switching: hFE is specified only at IC = −1 mA, VCE = −5 V; VCE(sat) and VI(on)/VI(off) are optimized for saturation/cutoff operation; no small-signal parameters (e.g., fT linearity, noise figure) are characterized for analog use.
What is the maximum safe operating frequency for PWM switching with PUMB3H-Q?
Based on fT = 180 MHz (typ) and measured VCE(sat) stability up to 10 kHz in Fig. 7, PUMB3H-Q supports reliable PWM switching up to 20 kHz in automotive BCM applications. Higher frequencies require verification of switching losses and thermal rise using the provided Zth(j-a) curves.
Does PUMB3H-Q support bidirectional current flow or reverse voltage tolerance?
No. As a PNP transistor pair, it conducts only from emitter to collector (sink mode). Reverse voltage tolerance is limited to VEBO = −7 V (emitter-base) and VCBO = −50 V (collector-base); applying reverse VCE beyond −50 V risks permanent damage per absolute maximum ratings.
PUMB3H-QF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 180MHz
- Power - Max:
- 240mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PUMB3H-QF FAQ
1.How can I place an order for PUMB3H-QF through Aetrix?
Please submit a Request for Quotation (RFQ) for PUMB3H-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PUMB3H-QF reliable?
The price and inventory of PUMB3H-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PUMB3H-QF is usually 5 days.
3.What payment methods are accepted for PUMB3H-QF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PUMB3H-QF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PUMB3H-QF?
PUMB3H-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PUMB3H-QF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PUMB3H-QF?
For technical support, including PUMB3H-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PUMB3H-QF requirements.
6.How does Aetrix verify that PUMB3H-QF is sourced from the original manufacturer or authorized distributors?
All PUMB3H-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PUMB3H-QF meets industry standards.
7.What is the process for return or replacement of PUMB3H-QF?
All PUMB3H-QF units undergo pre-shipment inspection (PSI). If there is an issue with PUMB3H-QF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PUMB3H-QF part is unused and in its original packaging.
Return procedure for PUMB3H-QF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PUMB3H-QF Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

-
PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

-
PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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