Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors PUMB9,115

Part No.:
PUMB9,115
Manufacturer:
NXP Semiconductors
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixPUMB9,115.pdf
Description:
NEXPERIA PUMB9 - SMALL SIGNAL BI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:21,635

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PUMB9 from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT363-3 (SC-88) package, rated for −50 V VCEO, −100 mA output current per transistor, with integrated bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It functions as a dual-channel digital switching element for low-current logic interfacing and peripheral control in space-constrained automotive and industrial PCBs.

For engineers reviewing the PUMB9 datasheet, PUMB9 pinout, PUMB9 application, or PUMB9 equivalent, this page delivers verified electrical parameters, validated AEC-Q101 qualification status, confirmed SOT363-3 thermal derating behavior, and real-world use cases in IC input control and discrete transistor replacement scenarios.

Technical Context

The PUMB9 integrates two matched PNP transistors with on-chip base bias networks-R1 (input resistor) and R2 (feedback resistor)-enabling direct TTL/CMOS-level input drive without external bias components. Each channel operates independently with open-base VCEO = −50 V and IO = −100 mA rating.

Its internal resistor ratio R2/R1 = 4.7 ensures stable saturation under varying temperature (−40 °C to +150 °C), while built-in emitter-grounded configuration simplifies PCB layout for dual-signal inversion or level-shifting tasks in 3.3 V/5 V mixed-voltage systems.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V - Maximum safe collector-emitter voltage with base open; defines high-side switching capability in negative-rail circuits
IO −100 mA - Continuous DC output current per transistor; supports driving LEDs, small relays, or logic inputs
R1 10 kΩ ±30% - Input bias resistor enabling direct connection to 3.3 V/5 V logic outputs without external pull-up
R2/R1 4.7 - Fixed feedback ratio ensuring consistent hFE-independent saturation and predictable VI(on)/VI(off) thresholds
Ptot (per device) 300 mW at Tamb ≤ 25 °C - Total power dissipation limit on FR4 PCB; sets maximum simultaneous channel loading
hFE 100 min at VCE = −5 V, IC = −5 mA - Minimum DC current gain; guarantees reliable switching with low base drive current
VCE(sat) −100 mV max at IC = −5 mA, IB = −0.25 mA - Low saturation voltage minimizes conduction loss in active-low switch applications

Pinout & Package

SOT363-3 (SC-88) 6-pin surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.35 mm footprint, and exposed pad-less construction optimized for reflow soldering on FR4 PCBs.

Pin/Terminal Circuit Role Design Meaning
1 GND1 Emitter terminal of TR1; common reference for first transistor channel
2 I1 Base input of TR1; connected internally to R1 and R2 network for logic-level drive
3 O2 Collector output of TR2; active-low switched output referenced to GND2
4 GND2 Emitter terminal of TR2; independent ground node for second channel
5 I2 Base input of TR2; electrically isolated from I1 but identical bias topology
6 O1 Collector output of TR1; complements O2 for dual independent switching paths

Key Features

Feature Design Value
AEC-Q101 qualified Qualified for automotive-grade reliability per stress test standard; enables use in engine control, body electronics, and ADAS modules
Integrated R1/R2 bias network Eliminates 4 external resistors per channel, reducing BOM count and PCB area by >30% vs. discrete PNP pairs
−100 mA per channel output Sufficient drive strength for optocoupler inputs, microcontroller GPIO protection, and low-power solenoid control
VI(on) = −0.8 V typ at IC = −1 mA Enables direct interface with 3.3 V CMOS outputs without level shifters or pull-down resistors
Thermal resistance Rth(j-a) = 417 K/W (per device) Supports sustained operation up to +85 °C ambient when mounted on standard FR4 with 35 µm copper

Applications

Automotive Body Control Module Industrial PLC Input Conditioning

Use Scenario: Driving LED status indicators and opto-isolator inputs in door module PCBs with limited board space.

IC Role / Device Role / Timing Role: Dual-channel active-low switch translating MCU GPIO signals into isolated, current-limited outputs.

Use Value: Reduces component count by replacing two discrete PNP transistors + four bias resistors, improving assembly yield and long-term reliability in vibration-prone environments.

Use Scenario: Level-shifting and noise filtering for 24 V DC sensor inputs feeding into 3.3 V microcontroller ADC channels.

IC Role / Device Role / Timing Role: Input buffer stage providing galvanic isolation support and ESD-tolerant signal conditioning before analog front-end.

Use Value: Built-in VI(off) = −0.7 V threshold rejects common-mode noise below −0.5 V, eliminating need for external Schmitt triggers in noisy factory settings.

Consumer Appliance UI Panel Medical Diagnostic Equipment Interface

Use Scenario: Controlling backlight dimming and tactile feedback buzzers in smart thermostat displays.

IC Role / Device Role / Timing Role: Dual low-side driver managing PWM-controlled loads with synchronized enable/disable timing.

Use Value: Matched R2/R1 ratio ensures identical turn-on/turn-off characteristics across both channels, preventing visual flicker or audible artifacts during rapid state transitions.

Use Scenario: Isolating patient-connected sensor signals from main system controller in portable ECG monitors.

IC Role / Device Role / Timing Role: Signal gating element enabling safe power-up sequencing and fault-safe shutdown of analog signal paths.

Use Value: −50 V VCEO rating provides margin against transient spikes from piezoelectric sensors, meeting IEC 60601-1 creepage requirements without additional TVS diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PUMD9 NPN/PNP complement; single NPN + single PNP pair instead of PNP/PNP; different pinout (I1/O1/GND1/I2/O2/GND2 → I1/O1/GND1/O2/I2/GND2) Required where one channel must sink current and the other source it (e.g., push-pull drivers) Select when mixed polarity drive is needed; not interchangeable without PCB redesign
PUMH9 NPN/NPN configuration; lacks negative-rail compatibility; VCEO = +50 V, VI(on) ≈ +0.7 V Suitable only for positive-rail logic systems (e.g., 5 V microcontrollers with active-high outputs) Choose only for non-inverting, ground-referenced switching; incompatible with negative supply rails or active-low control

Compared with PUMD9 and PUMH9, the PUMB9 uniquely supports dual active-low switching in negative-rail architectures-critical for automotive CAN/LIN bus interfaces and legacy industrial controllers using open-collector signaling.

Availability

PUMB9 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, consumer appliance UI panels, and medical diagnostic equipment requiring stable component supply and AEC-Q101 compliance.

Supply support for PUMB9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.

The PUMB9 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, designed specifically to replace discrete transistor-resistor combinations in cost-sensitive, space-constrained digital interface applications.

FAQ

What is the maximum junction temperature for continuous operation of PUMB9?

The absolute maximum junction temperature (Tj) is 150 °C per the datasheet Limiting Values table. For continuous operation, thermal design must ensure junction temperature stays below this limit under worst-case ambient and power dissipation conditions-typically requiring derating above 25 °C ambient per the 417 K/W Rth(j-a) curve.

Can PUMB9 be used in a 1.8 V logic interface?

No-PUMB9's VI(on) is specified down to −0.8 V (typical) at IC = −1 mA, and its VI(off) is −0.5 V (max). A 1.8 V logic high would exceed the −0.5 V off-threshold, causing unintended conduction. It is intended for 3.3 V or 5 V systems where logic low is near 0 V and logic high is ≥2.0 V.

Is the R1/R2 resistor network accessible externally?

No-the bias resistors are monolithically integrated inside the die and not brought out to pins. Pins 2 (I1) and 5 (I2) connect only to the internal base nodes; no external access to R1 or R2 terminals is provided. This integration eliminates trimming or calibration but fixes the bias ratio at 4.7.

Does PUMB9 support parallel operation of both transistors for higher current?

No-PUMB9's two transistors share no internal thermal or electrical coupling for current sharing. Each channel is rated for −100 mA individually, but simultaneous full-load operation requires verifying total power dissipation (≤300 mW) and thermal resistance (417 K/W) to avoid exceeding Tj = 150 °C. Derating is mandatory for dual-channel 100 mA use.

PUMB9,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Bulk
Product Status:
Active
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
10kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
300mW
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

PUMB9,115 FAQ

1.How can I place an order for PUMB9,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PUMB9,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PUMB9,115 reliable?

The price and inventory of PUMB9,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PUMB9,115 is usually 5 days.

3.What payment methods are accepted for PUMB9,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PUMB9,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PUMB9,115?

PUMB9,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PUMB9,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PUMB9,115?

For technical support, including PUMB9,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PUMB9,115 requirements.

6.How does Aetrix verify that PUMB9,115 is sourced from the original manufacturer or authorized distributors?

All PUMB9,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PUMB9,115 meets industry standards.

7.What is the process for return or replacement of PUMB9,115?

All PUMB9,115 units undergo pre-shipment inspection (PSI). If there is an issue with PUMB9,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PUMB9,115 part is unused and in its original packaging.

Return procedure for PUMB9,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PUMB9,115 Tags

  • PUMB9,115
  • PUMB9,115 PDF
  • PUMB9,115 Datasheet
  • PUMB9,115 Specifications
  • PUMB9,115 Images
  • NXP Semiconductors
  • NXP Semiconductors PUMB9,115
  • Buy PUMB9,115
  • PUMB9,115 Price
  • PUMB9,115 Distributor
  • PUMB9,115 Supplier
  • PUMB9,115 Wholesale
Related Products
SMUN5311DW1T1G
SMUN5311DW1T1G

onsemi

UMH9NTN
UMH9NTN

Rohm Semiconductor

PUMH13,115
PUMH13,115

Nexperia USA Inc.

PUMD3-QX
PUMD3-QX

Nexperia USA Inc.

PUMD2,115
PUMD2,115

Nexperia USA Inc.

RN4987FE,LF(CT
RN4987FE,LF(CT

Toshiba Semiconductor and Storage

PUMD12,115
PUMD12,115

Nexperia USA Inc.

PUMD9,115
PUMD9,115

Nexperia USA Inc.

PUMH9,115
PUMH9,115

Nexperia USA Inc.

PUMD3,115
PUMD3,115

Nexperia USA Inc.

DCX114EU-7-F
DCX114EU-7-F

Diodes Incorporated

PUMD13,115
PUMD13,115

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER