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Nexperia USA Inc. PUMD12/DG/B4X
- Part No.:
- PUMD12/DG/B4X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PUMD12/DG/B4X.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,510
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Product details
Overview
PUMD12/DG/B4X from Nexperia is an NPN/PNP dual resistor-equipped transistor (RET) in a 6-pin SOT363 (SC-88) surface-mount package, integrating matched 47 kΩ input bias resistors and delivering 100 mA per transistor output current. It functions as a compact logic-level interface driver for digital control signals, replacing discrete transistor-resistor combinations in automotive body electronics, industrial I/O modules, and portable device power management circuits.
For engineers reviewing the PUMD12/DG/B4X datasheet, PUMD12/DG/B4X pinout, PUMD12/DG/B4X application, or PUMD12/DG/B4X equivalent, key selection criteria include its AEC-Q101 qualification, built-in R1/R2 = 47 kΩ/47 kΩ bias network, dual-polarity switching capability, and thermal resistance of 417 K/W (per device) on FR4 PCB.
Technical Context
The PUMD12/DG/B4X integrates two monolithically matched transistors - one NPN (TR1) and one PNP (TR2) - each with dedicated base biasing via internal 47 kΩ resistors (R1) and feedback resistors (R2), enabling direct TTL/CMOS logic-level drive without external components. Its complementary topology supports push-pull or level-shifting configurations in bidirectional signal routing.
It operates across −65 °C to +150 °C ambient temperature, with VCEO = 50 V (both transistors), VCE(sat) ≤ 150 mV at IC = 10 mA/IB = 0.5 mA, and fT of 230 MHz (NPN) and 180 MHz (PNP), supporting high-speed digital switching up to ~50 MHz in buffered gate-drive or data-line applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage for both NPN and PNP transistors under open-base conditions. |
| IO | 100 mA - Continuous DC output current per transistor, sufficient for driving LEDs, small relays, or logic inputs. |
| R1 | 47 kΩ ±22% - Integrated input bias resistor enabling direct connection to 3.3 V/5 V logic without external pull-up/down. |
| R2/R1 ratio | 1.0 ±0.2 - Ensures stable current gain and predictable turn-on/turn-off thresholds across temperature. |
| fT (NPN) | 230 MHz - Transition frequency confirming suitability for high-speed digital switching up to ~50 MHz. |
| hFE | ≥80 at IC = 5 mA/VCE = 5 V - Minimum DC current gain ensures reliable saturation with low base drive current. |
| Ptot (per device) | 300 mW - Total power dissipation limit at Tamb ≤ 25 °C, defining thermal headroom for continuous operation. |
Pinout & Package
Package: SOT363 (SC-88), ultra-small 6-pin surface-mount plastic package with standard 0.65 mm pitch; dimensions 2.2 mm × 1.35 mm × 0.95 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND (emitter of TR1) | Common emitter reference for NPN transistor; connects to system ground in low-side switch configuration. |
| 2 | Input (base of TR1) | Logic-driven node for NPN transistor; internal 47 kΩ resistor pulls up to VCC when unasserted. |
| 3 | Output (collector of TR2) | Active-high output node for PNP transistor; sinks current when TR2 is on (base pulled low). |
| 4 | GND (emitter of TR2) | Common emitter reference for PNP transistor; connects to load return path in high-side switch configuration. |
| 5 | Input (base of TR2) | Logic-driven node for PNP transistor; internal 47 kΩ resistor pulls down to GND when unasserted. |
| 6 | Output (collector of TR1) | Active-low output node for NPN transistor; sources current when TR1 is on (base driven high). |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN/PNP RET topology | Enables complementary switching in single-package push-pull drivers or level translators without external biasing. |
| AEC-Q101 qualified | Validated for automotive applications including body control modules, lighting controllers, and sensor interfaces. |
| Integrated R1 = R2 = 47 kΩ | Eliminates four external resistors per channel, reducing BOM count, PCB area, and assembly cost. |
| Low VCE(sat) ≤ 150 mV | Minimizes conduction loss in 3.3 V/5 V logic-driven loads, improving efficiency in battery-powered systems. |
| Thermal resistance Rth(j-a) = 417 K/W (per device) | Supports sustained 100 mA operation on standard FR4 PCB without heatsinking in ambient ≤ 85 °C. |
Applications
| Automotive Body Control Unit | Industrial PLC Digital Output Module |
|---|---|
|
Use Scenario: Driving door lock actuators and interior LED status indicators from microcontroller GPIOs. IC Role / Device Role / Timing Role: Dual-polarity interface buffer translating 3.3 V MCU outputs into 12 V-compatible switched loads. Use Value: Reduces component count by eliminating eight discrete resistors and two transistors per channel while maintaining AEC-Q101 compliance. |
Use Scenario: Providing isolated 24 V DC sink/source outputs for sensor feedback and solenoid control in factory automation. IC Role / Device Role / Timing Role: Logic-level translator and current amplifier enabling direct MCU interfacing with industrial field devices. Use Value: Enables compact, thermally robust output stages with <150 mV saturation drop, minimizing heat generation in densely packed I/O cards. |
| Portable Medical Device Power Sequencing | Consumer Appliance Motor Driver Interface |
|
Use Scenario: Controlling power-up sequencing of analog front-end ICs and display backlight in handheld diagnostic tools. IC Role / Device Role / Timing Role: Precision-controlled enable/disable switch for regulated power rails using synchronized NPN/PNP action. Use Value: Built-in resistor matching ensures consistent turn-on timing between complementary rails, preventing shoot-through during power transitions. |
Use Scenario: Interfacing microcontroller PWM outputs to brushed DC motor H-bridge gate drivers in smart home appliances. IC Role / Device Role / Timing Role: Level-shifting and current-boosting stage converting 3.3 V logic to 5 V/12 V compatible gate drive signals. Use Value: 230 MHz fT supports clean PWM edge integrity up to 20 kHz, reducing EMI and improving motor torque linearity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual RET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVD2T2138WT1G | Single-channel NPN RET (SOT-363); no integrated PNP section; R1 = 100 kΩ, R2 = 100 kΩ. | Requires separate PNP device for complementary operation; suitable only for unidirectional low-side switching. | Select when only NPN functionality is needed and board space allows dual-device layout. |
| EMX11T2R | PNP/NPN RET in SOT-563; R1 = 22 kΩ, R2 = 47 kΩ; lower VCEO = 30 V; non-AEC-Q101 rated. | Limited to 30 V systems; not qualified for automotive use; higher base current demand due to lower R1. | Prefer for cost-sensitive consumer applications below 30 V where AEC-Q101 is unnecessary. |
Compared with NSVD2T2138WT1G and EMX11T2R, PUMD12/DG/B4X uniquely delivers matched dual-polarity RET functionality in a single AEC-Q101-qualified SOT363 package with symmetric 47 kΩ biasing, enabling true push-pull operation without design compromise.
Availability
PUMD12/DG/B4X is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and portable medical device power sequencing requiring stable component supply and long-term lifecycle support.
Supply support for PUMD12/DG/B4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in high-volume production of discrete semiconductors, logic devices, and PowerMOS transistors, spun off from NXP in 2017 with focus on automotive, industrial, and computing markets.
PUMD12/DG/B4X belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to simplify digital interface design by integrating precision bias networks into miniature packages for space-constrained, high-reliability applications.
FAQ
What is the maximum operating junction temperature for PUMD12/DG/B4X?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in the limiting values table. This rating enables reliable operation in under-hood automotive environments and industrial enclosures with elevated ambient temperatures, provided thermal design maintains junction temperature within this limit using the device's 417 K/W Rth(j-a).
Can PUMD12/DG/B4X replace discrete transistor-resistor combinations in existing designs?
Yes - it directly replaces two transistors and four bias resistors (two per transistor) in NPN/PNP digital switching circuits. Pin compatibility with standard SOT363 footprints and identical electrical behavior (VCEO = 50 V, IO = 100 mA, R1 = R2 = 47 kΩ) allow drop-in substitution without layout changes or firmware updates.
Is PUMD12/DG/B4X suitable for 12 V automotive load switching?
Yes - its 50 V VCEO rating provides 4× safety margin over nominal 12 V automotive systems, and AEC-Q101 qualification confirms robustness against temperature cycling, vibration, and voltage transients encountered in vehicle body control applications.
How does the R2/R1 ratio affect switching performance?
The R2/R1 ratio of 1.0 ±0.2 ensures tightly controlled base current division, stabilizing turn-on threshold (VI(on) = 1.6–3.0 V) and turn-off threshold (VI(off) = 0.8–1.2 V) across temperature and process variation, thereby minimizing logic ambiguity and improving noise immunity in noisy industrial environments.
PUMD12/DG/B4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 230MHz, 180MHz
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PUMD12/DG/B4X FAQ
1.How can I place an order for PUMD12/DG/B4X through Aetrix?
Please submit a Request for Quotation (RFQ) for PUMD12/DG/B4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PUMD12/DG/B4X reliable?
The price and inventory of PUMD12/DG/B4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PUMD12/DG/B4X is usually 5 days.
3.What payment methods are accepted for PUMD12/DG/B4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PUMD12/DG/B4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PUMD12/DG/B4X?
PUMD12/DG/B4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PUMD12/DG/B4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PUMD12/DG/B4X?
For technical support, including PUMD12/DG/B4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PUMD12/DG/B4X requirements.
6.How does Aetrix verify that PUMD12/DG/B4X is sourced from the original manufacturer or authorized distributors?
All PUMD12/DG/B4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PUMD12/DG/B4X meets industry standards.
7.What is the process for return or replacement of PUMD12/DG/B4X?
All PUMD12/DG/B4X units undergo pre-shipment inspection (PSI). If there is an issue with PUMD12/DG/B4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PUMD12/DG/B4X part is unused and in its original packaging.
Return procedure for PUMD12/DG/B4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PUMD12/DG/B4X Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
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DCX114EU-7-F
Diodes Incorporated
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Nexperia USA Inc.
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