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Nexperia USA Inc. PUMD9/ZLZ
- Part No.:
- PUMD9/ZLZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PUMD9/ZLZ.pdf
- Description:
- TRANS PREBIAS
- Quantity:
- Payment:
- Shipping:
Inventory:7,304
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Product details
Overview
PUMD9/ZLZ from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT363-3 (SC-88) package, integrating two complementary bias-resistor-transistor pairs: TR1 (NPN) with R1 = 10 kΩ and R2 = 47 kΩ, VCEO = 50 V, IO = 100 mA per transistor, and designed for digital switching in space-constrained automotive and industrial control circuits.
For engineers reviewing the PUMD9/ZLZ datasheet, PUMD9/ZLZ pinout, PUMD9/ZLZ application, or PUMD9/ZLZ equivalent, this device serves as a drop-in replacement for discrete BC847/BC857 pairs in level-shifting, IC input control, and low-power load switching-where built-in biasing eliminates external resistors and reduces PCB footprint.
Technical Context
The PUMD9/ZLZ integrates one NPN (TR1) and one PNP (TR2) transistor on a single die, each with factory-trimmed internal base bias resistors (R1 = 10 kΩ, R2 = 47 kΩ), enabling direct logic-level drive without external pull-up/down components. Its dual-polarity configuration supports complementary signal inversion and push-pull output stages.
Each transistor operates independently with verified VCEO = 50 V, IO = 100 mA, hFE ≥ 100 at IC = 5 mA, and VCE(sat) ≤ 100 mV at IC/IB = 20-ensuring reliable saturation under standard microcontroller GPIO drive conditions across –40 °C to +100 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V industrial bus and 12 V automotive domains. |
| IO | 100 mA - Continuous output current per transistor; sufficient for driving LEDs, small relays, and logic inputs. |
| R1 | 10 kΩ ±30% - Integrated input bias resistor; sets base current for predictable turn-on with 3.3 V/5 V MCU outputs. |
| R2/R1 ratio | 4.7 - Fixed feedback-to-input resistor ratio; ensures stable DC bias point and mitigates thermal drift effects. |
| hFE | ≥100 at VCE = 5 V, IC = 5 mA - Minimum DC current gain; guarantees ≥20x overdrive margin for robust saturation. |
| VCE(sat) | ≤100 mV at IC = 5 mA, IB = 0.25 mA - Low saturation voltage; minimizes power loss and self-heating in switching mode. |
| fT (TR1) | 230 MHz - Transition frequency of NPN transistor; supports high-speed digital switching up to ~10–20 MHz edge rates. |
| Ptot (device) | 300 mW at Tamb ≤ 25 °C - Total power dissipation limit; defines thermal derating envelope on FR4 PCB. |
Pinout & Package
SOT363-3 (TSSOP6) plastic surface-mounted package: 6-pin, 1.3 mm × 2.2 mm × 0.95 mm body, 0.65 mm pitch, exposed pad not present, JEDEC-compliant footprint for reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference node for first transistor's current path. |
| 2 | I1 | Base input for TR1 (NPN); driven directly by MCU GPIO or logic signal; internally connected to R1. |
| 3 | O2 | Collector output for TR2 (PNP); active-low switching node; sinks current when TR2 is on. |
| 4 | GND2 | Emiter connection for TR2 (PNP); separate ground return for second transistor to avoid crosstalk. |
| 5 | I2 | Base input for TR2 (PNP); accepts inverted or complementary logic; internally connected to R1 of TR2. |
| 6 | O1 | Collector output for TR1 (NPN); active-high switching node; sources current when TR1 is on. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in R1/R2 bias network | Eliminates 4 external resistors per pair; reduces BOM count and layout area by >60% vs. discrete BC847+BC857 solution. |
| Complementary NPN/PNP pairing | Enables single-package push-pull drivers or level translators without inter-device timing skew or matching errors. |
| 100 mA per transistor rating | Supports direct interface to 74HC-series inputs, optocoupler LEDs, and small-signal MOSFET gates without buffer stages. |
| Low VCE(sat) (≤100 mV) | Reduces conduction loss to <0.5 mW at 5 mA load; critical for battery-powered sensor nodes and always-on control modules. |
| Thermal resistance Rth(j-a) | 417 K/W (per device on FR4); allows continuous operation up to +85 °C ambient with no heatsink in typical 2-layer PCB layouts. |
Applications
| Automotive Door Module Control | Industrial PLC Input Conditioning |
|---|---|
Use Scenario: Driving window lift motor direction logic and door lock actuator enable signals in compact body control units. IC Role / Device Role / Timing Role: Dual-polarity RET provides isolated, polarity-matched switching for H-bridge direction control and relay coil drive. Use Value: Replaces two discrete transistors + four resistors; cuts PCB area by 45% and improves assembly yield in high-volume SMT lines. |
Use Scenario: Converting 24 V field sensor signals to 3.3 V/5 V logic levels while providing galvanic isolation via optocoupler drive. IC Role / Device Role / Timing Role: Acts as level translator and current amplifier for sinking/sourcing optocoupler LED anodes/cathodes. Use Value: Built-in biasing ensures consistent LED forward current across temperature; eliminates resistor tolerance drift in harsh environments. |
| Consumer Appliance UI Backlight Driver | Medical Infusion Pump Signal Isolation |
Use Scenario: Controlling segmented LED backlight arrays in smart thermostats and display panels using microcontroller PWM outputs. IC Role / Device Role / Timing Role: NPN channel switches LED anode supply; PNP channel sinks cathode current-enabling true PWM dimming without ghosting. Use Value: Matched R1/R2 ratios ensure identical turn-on thresholds for both transistors, preserving PWM duty cycle fidelity. |
Use Scenario: Isolating microcontroller GPIO from motor driver enable lines and fault feedback paths in Class II medical devices. IC Role / Device Role / Timing Role: Provides reinforced signal integrity for safety-critical enable/disable commands with fail-safe off-state leakage <100 nA. Use Value: Verified ICEO ≤ 5 µA at 150 °C junction ensures no false triggering during thermal stress testing per IEC 60601-1. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PUMH9 | NPN/NPN configuration only; identical R1/R2 values and SOT363-3 package; lacks PNP complement. | Suitable only for dual-NPN logic buffering or parallel current boosting-not for complementary switching. | Select when circuit requires matched NPN pairs (e.g., differential receivers or current mirrors), not push-pull outputs. |
| PUMB9 | PNP/PNP configuration only; same bias network and package; no NPN element. | Applicable for dual-PNP load switching or negative-rail control-cannot replace PUMD9's mixed-polarity functionality. | Choose only for circuits needing two independent PNP switches sharing one ground plane, such as dual high-side drivers. |
Compared with PUMH9 and PUMB9, the PUMD9/ZLZ uniquely delivers integrated NPN+PNP functionality in one package-enabling true complementary output stages without inter-device layout mismatch, timing skew, or footprint duplication.
Availability
PUMD9/ZLZ is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, consumer appliance control boards, and medical device signal conditioning requiring stable component supply and long-term obsolescence management.
Supply support for PUMD9/ZLZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies-delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.
The PUMD9/ZLZ belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce component count and improve reliability in digital interface and low-power switching applications.
FAQ
What is the maximum operating temperature for PUMD9/ZLZ?
The PUMD9/ZLZ has a maximum junction temperature (Tj) of 150 °C and specified ambient operating range from –65 °C to +150 °C. Derated power dissipation begins above 25 °C ambient, with full 300 mW capability only at Tamb ≤ 25 °C on standard FR4 PCB. Thermal resistance is 417 K/W (junction-to-ambient, per device).
Can PUMD9/ZLZ replace BC847 and BC857 in existing designs?
Yes-PUMD9/ZLZ is a functional and pin-compatible replacement for BC847 (NPN) + BC857 (PNP) pairs in digital switching applications. It replicates their VCEO, IO, and hFE specs while integrating bias resistors. Layout change is required: SOT363-3 footprint differs from individual SOT23 packages, but netlist connectivity remains identical.
What is the meaning of the marking code 'D%9' on PUMD9/ZLZ?
The top-side marking 'D%9' identifies the PUMD9/ZLZ device: 'D' denotes the PUMD series, '%' is a placeholder for Nexperia's manufacturing site code (e.g., 'A' for Manchester, 'B' for Hamburg), and '9' is the package variant identifier. Full traceability is maintained via date code and wafer lot information in Nexperia's quality records.
Does PUMD9/ZLZ support 1.8 V logic-level drive?
No-PUMD9/ZLZ is not guaranteed to saturate reliably with 1.8 V input. Its VI(on) is specified as 0.8–1.4 V (typ/max) for TR1 at IC = 1 mA, but drive margin shrinks significantly below 2.5 V. For 1.8 V systems, verify IB ≥ 0.25 mA under worst-case VI(on) and temperature; consider PUMD12 (lower R1) if insufficient margin exists.
PUMD9/ZLZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 230MHz, 180MHz
- Power - Max:
- 300mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PUMD9/ZLZ FAQ
1.How can I place an order for PUMD9/ZLZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PUMD9/ZLZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PUMD9/ZLZ reliable?
The price and inventory of PUMD9/ZLZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PUMD9/ZLZ is usually 5 days.
3.What payment methods are accepted for PUMD9/ZLZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PUMD9/ZLZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PUMD9/ZLZ?
PUMD9/ZLZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PUMD9/ZLZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PUMD9/ZLZ?
For technical support, including PUMD9/ZLZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PUMD9/ZLZ requirements.
6.How does Aetrix verify that PUMD9/ZLZ is sourced from the original manufacturer or authorized distributors?
All PUMD9/ZLZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PUMD9/ZLZ meets industry standards.
7.What is the process for return or replacement of PUMD9/ZLZ?
All PUMD9/ZLZ units undergo pre-shipment inspection (PSI). If there is an issue with PUMD9/ZLZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PUMD9/ZLZ part is unused and in its original packaging.
Return procedure for PUMD9/ZLZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PUMD9/ZLZ Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
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PUMD2,115
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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