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Nexperia USA Inc. PUMH30,115

Part No.:
PUMH30,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixPUMH30,115.pdf
Description:
TRANS PREBIAS 2NPN 50V 6TSSOP
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,010

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Product details

Overview

PUMH30 from Nexperia (formerly Philips Semiconductors) is an NPN/NPN double resistor-equipped transistor (RET) in SOT363 (SC-88) package, integrating two matched NPN transistors with built-in 2.2 kΩ input bias resistors and open R2 configuration. It delivers 100 mA per transistor output current, supports 50 V VCEO, and is used for low-current peripheral driving and IC input control in space-constrained digital logic interfaces.

For engineers reviewing the PUMH30 datasheet, PUMH30 pinout, PUMH30 application, or PUMH30 equivalent, this page provides verified pin functions, thermal resistance (416 K/W per device), DC current gain (hFE ≥30 at IC = 20 mA), saturation voltage (≤150 mV), and direct alternatives to BC847BS/BC847BV in dual-transistor logic buffer designs.

Technical Context

The PUMH30 implements a dual-NPN RET architecture where each transistor has a dedicated 2.2 kΩ base-input resistor (R1) and no second bias resistor (R2 = open), enabling simplified single-resistor drive for digital signal translation. Its matched pair topology ensures consistent switching behavior across both channels under identical bias conditions.

Designed for surface-mount logic interfacing, it operates within −65 °C to +150 °C ambient range, supports reflow-only soldering, and maintains stable hFE and VCE(sat) across temperature extremes (−40 °C to +100 °C), with leakage currents limited to ≤1 µA ICEO at 30 V.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V industrial I/O and 3.3/5 V logic level-shifting circuits.
IO 100 mA per transistor - Continuous output current capability; sufficient for driving LEDs, small relays, or CMOS/TTL inputs without external current limiting.
R1 2.2 kΩ (1.54–2.86 kΩ) - Integrated base bias resistor; eliminates need for two external resistors per transistor, reducing BOM count and PCB area.
hFE ≥30 at VCE = 5 V, IC = 20 mA - Minimum DC current gain; ensures reliable saturation with standard microcontroller GPIO drive (e.g., 0.5 mA base current).
VCE(sat) ≤150 mV at IC = 10 mA, IB = 0.5 mA - Low saturation voltage; minimizes power loss and heat generation in high-duty-cycle switching applications.
Ptot (per device) 300 mW at Tamb ≤25 °C - Total power dissipation limit; defines maximum combined power handling of both transistors on standard FR4 PCB.

Pinout & Package

SOT363 (SC-88) 6-pin plastic surface-mounted package with gull-wing leads; 2 mm × 1.25 mm footprint; 0.65 mm pitch; pin 1 marked by notch or dot.

Pin/Terminal Circuit Role Design Meaning
1 GND (emitter) TR1 Emitter connection for first transistor; common reference node for input-side bias network.
2 input (base) TR1 Base terminal of TR1 with integrated 2.2 kΩ resistor to pin 1; accepts direct logic-level drive.
3 output (collector) TR2 Collector output of second transistor; electrically isolated from TR1's collector (pin 6).
4 GND (emitter) TR2 Emitter connection for second transistor; independent ground path from TR1, supporting dual-channel isolation.
5 input (base) TR2 Base terminal of TR2 with integrated 2.2 kΩ resistor to pin 4; enables independent control of second channel.
6 output (collector) TR1 Collector output of first transistor; complements pin 3 to form fully independent dual-output configuration.

Key Features

Feature Design Value
Dual NPN RET topology Two matched NPN transistors with individual 2.2 kΩ input resistors and open R2 - eliminates four external bias resistors and simplifies layout for dual-buffer designs.
Low saturation voltage VCE(sat) ≤150 mV at IC/IB = 20 - reduces conduction loss and self-heating in battery-powered or thermally constrained systems.
High-temperature operation Junction temperature rating up to 150 °C - supports deployment in automotive under-hood modules and industrial motor controllers.
Space-efficient packaging SOT363 footprint (2.0 × 1.25 mm) - saves >60% board area versus discrete dual-transistor solutions using SOT23 devices.

Applications

Logic Level Translation Microcontroller I/O Expansion

Use Scenario: Translating 1.8 V or 3.3 V MCU outputs to 5 V or 24 V loads in mixed-voltage systems.

IC Role / Device Role: Dual-channel active pull-up/pull-down switch with integrated biasing.

Use Value: Eliminates need for level-shifter ICs or discrete resistor networks while maintaining fast edge response (<100 ns propagation delay implied by low Cc = 2.5 pF).

Use Scenario: Expanding GPIO count for driving multiple LEDs, small solenoids, or optocoupler inputs in compact embedded controllers.

IC Role / Device Role: Dual low-side switch with built-in base termination.

Use Value: Reduces component count by 4 resistors per device and cuts pick-and-place cycle time vs. two separate SOT23 transistors.

Industrial Sensor Interface Consumer Appliance Control

Use Scenario: Conditioning open-collector sensor outputs (e.g., Hall effect, proximity switches) into clean CMOS-compatible signals.

IC Role / Device Role: Dual buffer amplifier with defined input impedance (2.2 kΩ) and noise-immune saturation margin.

Use Value: Ensures consistent turn-on threshold across temperature (±30% R1 tolerance) and rejects EMI-induced false triggering.

Use Scenario: Controlling relay coils, buzzer drivers, or display segment drivers in white goods and HVAC panels.

IC Role / Device Role: Dual general-purpose switching element with guaranteed 100 mA per channel.

Use Value: Meets IEC 61000-4-2 ESD immunity requirements (tested to ±8 kV contact) due to internal resistor protection and robust junction design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BS Discrete dual NPN in SOT363; no built-in resistors - requires two external 2.2 kΩ base resistors per channel. Higher BOM count and layout complexity; better for designs requiring adjustable base current or R2 feedback. Select when precise hFE binning or variable bias is required; avoid if minimizing assembly cost and footprint is critical.
PUMD30 NPN/PNP complement in same SOT363 package; R1 = 2.2 kΩ, R2 = open - provides complementary switching capability instead of dual-NPN. Suitable for H-bridge pre-driver or push-pull output stages where sourcing and sinking are both needed. Select for bidirectional interface applications; not interchangeable with PUMH30 due to opposite polarity per channel.

Compared with BC847BS, PUMH30 reduces passive component count by 4 resistors and simplifies layout; compared with PUMD30, it provides matched dual-NPN behavior essential for parallel logic buffering rather than complementary switching.

Availability

PUMH30 is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller I/O expansion, and consumer appliance control requiring stable component supply and long-term production continuity.

Supply support for PUMH30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia, formerly Philips Semiconductors, is a global leader in high-volume, high-reliability discrete and logic semiconductors, headquartered in Nijmegen, Netherlands.

The PUMH30 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in cost-sensitive, space-constrained digital interface applications.

FAQ

What is the maximum operating temperature for PUMH30?

The PUMH30 has a specified junction temperature limit of 150 °C and an ambient operating range of −65 °C to +150 °C. Thermal resistance from junction to ambient is 416 K/W per device on standard FR4 PCB, meaning it can dissipate 300 mW at 25 °C ambient before reaching Tj = 150 °C. Derating is required above 25 °C ambient per the thermal curve in the datasheet.

Can PUMH30 be used as a direct replacement for BC847BS?

No - PUMH30 is not a pin-compatible or functional drop-in replacement for BC847BS. While both are in SOT363 and serve dual-NPN roles, BC847BS lacks integrated bias resistors and requires external components. PUMH30's pinout differs (e.g., emitter pins are separated), and its internal R1 mandates different drive logic. Circuit redesign is required for substitution.

What does "R2 = open" mean in the PUMH30 specification?

"R2 = open" indicates that only one internal bias resistor (R1 = 2.2 kΩ) is connected between base and emitter for each transistor; there is no second resistor (R2) between base and collector. This configuration supports standard current-driven switching but excludes emitter-follower or voltage-divider bias topologies requiring R2 feedback.

Is wave soldering supported for PUMH30?

No - the official datasheet explicitly states that reflow soldering is the only recommended method. Wave soldering is not qualified for PUMH30 due to thermal stress risks on the SOT363 package and potential damage to internal resistor elements. Reflow profiles must follow JEDEC J-STD-020 standards for MSLE 1 devices.

PUMH30,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
2.2kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
300mW
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

PUMH30,115 FAQ

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Please submit a Request for Quotation (RFQ) for PUMH30,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of PUMH30,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PUMH30,115 is usually 5 days.

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Once your PUMH30,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PUMH30,115?

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6.How does Aetrix verify that PUMH30,115 is sourced from the original manufacturer or authorized distributors?

All PUMH30,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PUMH30,115 meets industry standards.

7.What is the process for return or replacement of PUMH30,115?

All PUMH30,115 units undergo pre-shipment inspection (PSI). If there is an issue with PUMH30,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PUMH30,115 part is unused and in its original packaging.

Return procedure for PUMH30,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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