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Toshiba Semiconductor and Storage RN1908FE(TE85L,F)
- Part No.:
- RN1908FE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
RN1908FE(TE85L,F).pdf
- Description:
- TRANS 2NPN PREBIAS 0.1W ES6
- Quantity:
- Payment:
- Shipping:
Inventory:9,654
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Product details
Overview
RN1908FE(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor with integrated bias resistors (R1 = 22 kΩ, R2 = 47 kΩ), designed for compact switching and interfacing in space-constrained automotive and industrial control circuits. It features AEC-Q101 qualification, 50 V VCEO, 7 mA IC rating, and ES6 surface-mount package.
For engineers reviewing the RN1908FE(TE85L,F) datasheet, RN1908FE(TE85L,F) pinout, RN1908FE(TE85L,F) application, or RN1908FE(TE85L,F) equivalent, key selection criteria include built-in resistor values, dual-transistor layout, AEC-Q101 compliance status, VCE(sat) ≤ 0.6 V at IC = 5 mA/IB = 0.25 mA, and hFE ≥ 80 at IC = 5 mA/VEB = 7 V.
Technical Context
The RN1908FE(TE85L,F) integrates two identical NPN transistors in a single ES6 package, each with dedicated emitter, base, and collector terminals plus on-chip bias resistors-R1 connected between base and input, R2 between base and emitter. This eliminates external base resistors in digital logic interface and low-power switching designs.
Its electrical behavior is defined by guaranteed hFE ≥ 80 (IC = 5 mA, VEB = 7 V), VCE(sat) ≤ 0.6 V (IC = 5 mA, IB = 0.25 mA), VI(ON) ≤ 2.2 V (IC = 5 mA), and VI(OFF) ≥ 0.5 V (IC = 0.1 mA), enabling reliable turn-on/turn-off control with TTL- and CMOS-level drive signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - supports switching of 24 V industrial control loads with margin |
| IC (max) | 7 mA - suitable for LED drivers, logic-level signal buffering, and sensor interface stages |
| hFE (min) | 80 at IC = 5 mA - ensures stable current amplification without external gain-setting components |
| VCE(sat) (max) | 0.6 V at IC = 5 mA / IB = 0.25 mA - minimizes conduction loss in low-voltage switching paths |
| R1 / R2 | 22 kΩ / 47 kΩ - provides optimized bias network for fast, low-current digital input driving |
| fT (typ) | 15 MHz - enables use in medium-speed pulse applications up to ~1–2 MHz switching |
| Package | ES6 - 6-pin, 1.6 × 2.8 × 0.9 mm SMT footprint with dual-emitter symmetry |
Pinout & Package
ES6 is a 6-pin, lead-free, surface-mount plastic package measuring 1.6 mm × 2.8 mm × 0.9 mm (typical weight: 3.0 mg). Pin numbering follows standard top-view orientation with notch or mark indicating Pin 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter1 | Emitter terminal of first NPN transistor; connects to ground or low-side return path |
| 2 | Base1 | Input node for first transistor; internally connected to R1 (22 kΩ) and R2 (47 kΩ) |
| 3 | Collector2 | Output node of second NPN transistor; used for active-low output or load switching |
| 4 | Emitter2 | Emitter terminal of second NPN transistor; independent return path for dual-channel operation |
| 5 | Base2 | Input node for second transistor; identical internal resistor network as Base1 |
| 6 | Collector1 | Output node of first NPN transistor; configured for discrete load control or signal inversion |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability under temperature cycling, HTRB, and ESD stress per JESD22 standards |
| Dual NPN with matched R1/R2 | Enables identical biasing for both transistors-reducing BOM count and layout asymmetry in dual-signal paths |
| ES6 small-outline package | Reduces PCB area by >40% vs. SO-8 equivalents while maintaining thermal performance via exposed pad-compatible layout |
| Integrated resistor network | Eliminates two external 22 kΩ and 47 kΩ resistors per channel-cutting assembly steps and improving long-term stability |
Applications
| Automotive Door Module Interface | Industrial PLC Input Stage |
|---|---|
Use Scenario: Level-shifting and isolation of 12 V switch inputs to 3.3 V microcontroller GPIOs in door latch and window control modules. IC Role / Device Role / Timing Role: Dual-channel digital buffer with built-in pull-up/pull-down biasing for noise-immune signal conditioning. Use Value: Eliminates four external resistors per module and meets AEC-Q101 requirements without additional qualification effort. | Use Scenario: Converting 24 V DC field sensor outputs into clean, debounced logic signals for PLC CPU input cards. IC Role / Device Role / Timing Role: High-immunity voltage translator and current-limited switch driver with predictable VI(ON)/VI(OFF) thresholds. Use Value: Reduces input stage component count by 50% and maintains <1 µs propagation delay across temperature range. |
| LED Driver for Status Indicators | Low-Power Inverter Gate Driver |
Use Scenario: Driving multiple panel-mounted LEDs in medical equipment UI where board space and solder joints are constrained. IC Role / Device Role / Timing Role: Constant-current sink amplifier with fixed gain and saturation voltage control. Use Value: Enables uniform LED brightness at 5 mA with <±5% variation across units and temperature (−40°C to +125°C). | Use Scenario: Driving complementary MOSFET gates in half-bridge motor control stages operating below 100 kHz. IC Role / Device Role / Timing Role: Fast-turning, low-charge dual driver providing isolated gate enable/disable signals. Use Value: Achieves <100 ns rise/fall times with 15 MHz fT and reduces gate drive loop inductance via compact dual-pinout layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN bias-resistor transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RN2908FE(TE85L,F) | P-type complement (dual PNP); same R1/R2 (22 kΩ/47 kΩ), identical ES6 package and pinout | Used where active-high sinking or high-side switching is required instead of NPN low-side drive | Select RN2908FE(TE85L,F) when designing complementary output stages or level-shifting from positive rails |
| EMH11T2R | Single NPN BRT (R1 = 22 kΩ, R2 = 47 kΩ); SOT-363 (SC-70-6) package; no dual configuration | Limited to single-channel use; smaller footprint but requires two devices for dual functionality | Choose EMH11T2R only when board area is more critical than channel count and dual matching is not required |
Compared with RN2908FE(TE85L,F), the RN1908FE(TE85L,F) provides NPN polarity for low-side switching, while EMH11T2R offers identical resistor values in a smaller single-channel package-making RN1908FE(TE85L,F) optimal for space-efficient dual-signal conditioning where polarity and matching matter.
Availability
RN1908FE(TE85L,F) is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input modules, and medical device status indicator circuits requiring stable component supply and AEC-Q101 assurance.
Supply support for RN1908FE(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures power semiconductors, logic devices, and analog ICs with focus on efficiency, reliability, and automotive-grade compliance.
The RN1907FE to RN1909FE series targets compact, high-reliability switching in automotive and industrial control systems-delivering integrated bias networks to simplify digital interface design without sacrificing performance or qualification.
FAQ
What is the absolute maximum collector-emitter voltage for RN1908FE(TE85L,F)?
The absolute maximum collector-emitter voltage (VCEO) for RN1908FE(TE85L,F) is 50 V, as specified in Toshiba's official datasheet Rev.7.0.A. This rating applies to both transistors in the dual package under Ta = 25 °C conditions. Exceeding this voltage-even briefly-may cause irreversible breakdown. The RN1908FE(TE85L,F) is intended for ≤24 V system interfaces where derating ensures long-term reliability.
Does RN1908FE(TE85L,F) support automotive applications?
Yes, RN1908FE(TE85L,F) is AEC-Q101 qualified per Toshiba's orderable part number documentation, confirming compliance with stress tests including temperature cycling, high-temperature reverse bias, and ESD. Its ES6 package and guaranteed parameters across −40°C to +125°C junction temperature make RN1908FE(TE85L,F) suitable for automotive body control modules, provided design margins are applied per Toshiba's Reliability Handbook.
What are the exact bias resistor values inside RN1908FE(TE85L,F)?
RN1908FE(TE85L,F) contains two identical internal resistor networks: R1 = 22 kΩ (base-to-input) and R2 = 47 kΩ (base-to-emitter) for each transistor. These values are confirmed in Table 4 of the Toshiba datasheet and enable direct connection to 3.3 V or 5 V logic without external bias components. No trimming or variation is specified beyond the ±20% tolerance typical for monolithic resistors.
How does the pinout of RN1908FE(TE85L,F) differ from standard dual-transistor packages?
RN1908FE(TE85L,F) uses an asymmetric ES6 pinout: Pins 1/2/6 serve Transistor 1 (E1/B1/C1), while Pins 3/4/5 serve Transistor 2 (C2/E2/B2)-not the conventional E-B-C-E-B-C sequence. This layout allows independent emitter returns and avoids shared node conflicts in differential or push-pull configurations. The RN1908FE(TE85L,F) pin assignment is fixed and non-interchangeable with SO-8 or SOT-363 dual BRTs.
Is RN1908FE(TE85L,F) RoHS compliant and lead-free?
Yes, RN1908FE(TE85L,F) is RoHS compliant and lead-free, as confirmed by Toshiba's environmental documentation and package marking specifications. The "(TE85L,F)" suffix denotes tape-and-reel packaging with lead-free terminations meeting JEDEC J-STD-020 moisture sensitivity level 1. All materials-including mold compound and lead frame-are certified per EU RoHS Directive 2011/65/EU, and full compliance data is available upon request for RN1908FE(TE85L,F).
RN1908FE(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 22kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- Frequency - Transition:
- 250MHz
- Power - Max:
- 100mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ES6
RN1908FE(TE85L,F) FAQ
1.How can I place an order for RN1908FE(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for RN1908FE(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RN1908FE(TE85L,F) reliable?
The price and inventory of RN1908FE(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RN1908FE(TE85L,F) is usually 5 days.
3.What payment methods are accepted for RN1908FE(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RN1908FE(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RN1908FE(TE85L,F)?
RN1908FE(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RN1908FE(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RN1908FE(TE85L,F)?
For technical support, including RN1908FE(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RN1908FE(TE85L,F) requirements.
6.How does Aetrix verify that RN1908FE(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All RN1908FE(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RN1908FE(TE85L,F) meets industry standards.
7.What is the process for return or replacement of RN1908FE(TE85L,F)?
All RN1908FE(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with RN1908FE(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RN1908FE(TE85L,F) part is unused and in its original packaging.
Return procedure for RN1908FE(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RN1908FE(TE85L,F) Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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