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Toshiba Semiconductor and Storage RN1910FE(T5L,F,T)
- Part No.:
- RN1910FE(T5L,F,T)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
RN1910FE(T5L,F,T).pdf
- Description:
- TRANS 2NPN PREBIAS 0.1W ES6
- Quantity:
- Payment:
- Shipping:
Inventory:2,501
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Product details
Overview
RN1910FE(T5L,F,T) from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor with integrated bias resistors in an ES6 surface-mount package, rated for 50 V VCEO, 100 mA IC, and 100 mW PC, used in switching and driver circuits for automotive and industrial control interfaces.
For engineers reviewing the RN1910FE(T5L,F,T) datasheet, RN1910FE(T5L,F,T) pinout, RN1910FE(T5L,F,T) application, or RN1910FE(T5L,F,T) equivalent, key selection considerations include AEC-Q101 qualification, dual-transistor integration in a 6-pin compact package, guaranteed hFE ≥ 120 at IC = 1 mA, and built-in R1 = 4.7 kΩ input resistance enabling simplified interface design without external base resistors.
Technical Context
This device integrates two independent NPN transistors sharing no internal connection-each with its own emitter, base, and collector terminals-and features monolithic bias resistors (R1 = 4.7 kΩ) connected between base and emitter on each channel. It operates as a discrete switching element, not a logic gate or digital IC.
The ES6 package supports high-density PCB layouts with 0.65 mm pitch and 3.0 mg typical weight. Absolute maximum ratings are shared across both transistors (Q1 and Q2), including Tj = 150 °C and Tstg = −55 to 150 °C, confirming suitability for under-hood automotive environments when thermally managed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Supports switching of 24 V automotive loads with 2× safety margin |
| IC | 100 mA - Sufficient for driving small relays, LEDs, or logic-level MOSFET gates |
| hFE | ≥120 @ VCE = 5 V, IC = 1 mA - Ensures reliable saturation with low base drive current |
| VCE(sat) | ≤0.3 V @ IC = 5 mA, IB = 0.25 mA - Minimizes conduction loss in active switching |
| R1 | 4.7 kΩ - Integrated base-emitter resistor eliminates need for external bias components |
| fT | ≥3 MHz - Enables use in low-speed digital switching up to ~1 MHz square-wave operation |
| PC | 100 mW - Requires thermal derating above 25 °C ambient; suitable for low-duty-cycle applications |
Pinout & Package
Package: ES6 - 6-pin ultra-small surface-mount package (3.0 × 1.8 × 0.85 mm, 0.65 mm pitch, 3.0 mg typical weight), optimized for space-constrained automotive and industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter1 (Q1) | Current sink terminal for first NPN transistor; connects to ground or low-side return path |
| 2 | Base1 (Q1) | Control input for Q1; internally connected to R1 (4.7 kΩ) and Emitter1 |
| 3 | Collector2 (Q2) | Current source terminal for second NPN transistor; connects to load supply rail |
| 4 | Emitter2 (Q2) | Current sink terminal for second NPN transistor; independent of Q1 emitter |
| 5 | Base2 (Q2) | Control input for Q2; internally connected to R1 (4.7 kΩ) and Emitter2 |
| 6 | Collector1 (Q1) | Current source terminal for first NPN transistor; independent of Q2 collector |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability per stress test requirements (HTOL, TC, HAST, etc.) |
| Dual NPN with isolated channels | Two fully independent transistors in one package-no shared junctions or electrical coupling |
| Integrated 4.7 kΩ base-emitter resistor | Enables direct microcontroller GPIO interfacing without external pull-up/base resistors |
| ES6 footprint compatibility | Matches JEDEC MO-252 standard; enables drop-in replacement with other ES6-packaged BRISTs |
Applications
| Automotive Door Module Switching | Industrial PLC Input Interface |
|---|---|
Use Scenario: Controlling window lift motors and mirror actuators via MCU outputs in door control units. IC Role / Device Role / Timing Role: Dual NPN switch providing isolated low-side drive for two 12 V DC loads. Use Value: AEC-Q101 rating ensures long-term reliability in temperature-cycled environments; integrated R1 reduces BOM count by two resistors per channel. | Use Scenario: Level-shifting and isolation between 3.3 V/5 V logic controllers and 24 V field sensors or solenoids. IC Role / Device Role / Timing Role: Discrete interface transistor converting logic-level signals into robust 24 V-compatible switching capability. Use Value: VCEO = 50 V provides headroom for inductive kickback suppression; dual configuration allows simultaneous handling of two sensor inputs. |
| Inverter Gate Driver Stage | LED Matrix Row Driver |
Use Scenario: Driving the gate of high-side NMOS switches in half-bridge inverters for HVAC blowers or pump controls. IC Role / Device Role / Timing Role: Low-saturation NPN buffer stage translating PWM signals to higher-current gate drive capability. Use Value: VCE(sat) ≤ 0.3 V minimizes power loss during conduction; fT ≥ 3 MHz supports PWM frequencies up to 1 MHz without significant phase lag. | Use Scenario: Scanning 8×8 LED matrices in signage or instrumentation displays using multiplexed row activation. IC Role / Device Role / Timing Role: High-speed current sink for LED rows, controlled by microcontroller port pins. Use Value: hFE ≥ 120 ensures full LED brightness at 20 mA per row with <1 mA base drive; dual layout supports interleaved scanning architecture. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN bias-resistor transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVD2101PT1G | Single-channel, SOT-416 package, R1 = 10 kΩ, hFE min = 100 | Requires two devices for dual functionality; lower hFE and higher R1 reduce drive margin | Choose when board space allows separate placement and lower gain suffices |
| UMT1N (RN1901FE) | Single NPN BRIST in UMT3 package; no dual configuration; R1 = 2.2 kΩ | Lacks channel integration-requires duplication for dual-load control | Select only if single-transistor function is sufficient and ES6 footprint is not required |
Compared with NSVD2101PT1G and UMT1N, RN1910FE(T5L,F,T) delivers verified dual-channel operation in a space-saving ES6 package with tighter hFE guarantee and lower R1, making it optimal for automotive body electronics where component count, footprint, and AEC-Q101 compliance are jointly critical.
Availability
RN1910FE(T5L,F,T) is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC input stages, inverter gate drivers, and LED matrix row drivers requiring stable component supply and AEC-Q101 assurance.
Supply support for RN1910FE(T5L,F,T) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer applications.
The RN1910FE(T5L,F,T) belongs to Toshiba's Bias Resistor Integrated Transistor (BRIST) product line, engineered specifically to replace discrete transistor + resistor combinations in space- and cost-sensitive automotive interface circuits.
FAQ
What is the AEC-Q101 qualification status of RN1910FE(T5L,F,T)?
RN1910FE(T5L,F,T) is explicitly listed as AEC-Q101 qualified in Toshiba's official orderable part number documentation. This qualification covers temperature cycling, high-temperature operating life, and humidity testing per AEC-Q101 Rev. D, confirming suitability for automotive under-hood and cabin applications when operated within specified absolute maximum ratings.
Does RN1910FE(T5L,F,T) have electrically isolated transistor channels?
Yes, RN1910FE(T5L,F,T) contains two fully independent NPN transistors (Q1 and Q2) with no internal electrical connection between them. Pin assignments confirm separate emitter, base, and collector terminals for each channel, enabling true dual-function operation without crosstalk or shared thermal paths beyond package-level conduction.
What is the exact value and location of the integrated bias resistor in RN1910FE(T5L,F,T)?
RN1910FE(T5L,F,T) integrates a 4.7 kΩ resistor (R1) between Base1 and Emitter1 for Q1, and identically between Base2 and Emitter2 for Q2. This value is confirmed in Toshiba's Electrical Characteristics table and enables direct connection to 3.3 V or 5 V logic outputs without external base resistors.
Can RN1910FE(T5L,F,T) be used in linear amplifier applications?
No-RN1910FE(T5L,F,T) is characterized and specified exclusively for switching operation. Its hFE is guaranteed only at IC = 1 mA, and VCE(sat) and fT data reflect saturated and high-frequency switching behavior. Toshiba does not specify linearity, distortion, or small-signal parameters required for analog amplification.
Is the ES6 package of RN1910FE(T5L,F,T) compatible with standard reflow profiles?
Yes, the ES6 package of RN1910FE(T5L,F,T) is qualified for lead-free reflow soldering per J-STD-020. Its 0.65 mm pitch and 0.85 mm height support standard stencil design and automated placement; peak reflow temperature must not exceed 260 °C for ≤30 seconds to maintain integrity of internal bias resistors and junction passivation.
RN1910FE(T5L,F,T) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- Frequency - Transition:
- 250MHz
- Power - Max:
- 100mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ES6
RN1910FE(T5L,F,T) FAQ
1.How can I place an order for RN1910FE(T5L,F,T) through Aetrix?
Please submit a Request for Quotation (RFQ) for RN1910FE(T5L,F,T) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RN1910FE(T5L,F,T) reliable?
The price and inventory of RN1910FE(T5L,F,T) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RN1910FE(T5L,F,T) is usually 5 days.
3.What payment methods are accepted for RN1910FE(T5L,F,T)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RN1910FE(T5L,F,T) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RN1910FE(T5L,F,T)?
RN1910FE(T5L,F,T) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RN1910FE(T5L,F,T) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RN1910FE(T5L,F,T)?
For technical support, including RN1910FE(T5L,F,T) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RN1910FE(T5L,F,T) requirements.
6.How does Aetrix verify that RN1910FE(T5L,F,T) is sourced from the original manufacturer or authorized distributors?
All RN1910FE(T5L,F,T) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RN1910FE(T5L,F,T) meets industry standards.
7.What is the process for return or replacement of RN1910FE(T5L,F,T)?
All RN1910FE(T5L,F,T) units undergo pre-shipment inspection (PSI). If there is an issue with RN1910FE(T5L,F,T), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RN1910FE(T5L,F,T) part is unused and in its original packaging.
Return procedure for RN1910FE(T5L,F,T):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RN1910FE(T5L,F,T) Tags
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SMUN5311DW1T1G
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UMH9NTN
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PUMH13,115
Nexperia USA Inc.
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PUMD9,115
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PUMH9,115
Nexperia USA Inc.
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