Toshiba Semiconductor and Storage RN1911FETE85LF

Overview

RN1911FETE85LF from Toshiba Electronic Devices & Storage Corporation is a dual NPN epitaxial silicon transistor with integrated bias resistors in an ES6 package, rated for 50 V V_CEO, 100 mA I_C, and 100 mW P_C; it serves as a compact switching element in automotive-grade interface and driver circuits.

For engineers reviewing the RN1911FETE85LF datasheet, RN1911FETE85LF pinout, RN1911FETE85LF application, or RN1911FETE85LF equivalent, this AEC-Q101-qualified dual BRT enables reduced external component count, supports dual-channel logic-level interfacing, and delivers verified h_FE ≥ 120 at I_C = 1 mA with V_CE = 5 V.

Technical Context

This device integrates two independent NPN transistors with built-in base-emitter and base-collector bias resistors (R1 = 4.7 kΩ typ., R2 = 10 kΩ typ.) in a single ES6 package. Each channel shares common absolute maximum ratings including 50 V V_CBO/V_CEO, 5 V V_EBO, and 150 °C T_j.

Electrical behavior is characterized per channel: h_FE ranges 120–700 (V_CE = 5 V, I_C = 1 mA), V_CE(sat) ≤ 0.3 V (I_C = 5 mA, I_B = 0.25 mA), and f_T ≥ 3 MHz (V_CE = 10 V, I_C = 5 mA). C_ob is 6.11 pF max at V_CB = 10 V.

Key Specifications

Pinout & Package

Package: ES6 - ultra-small surface-mount dual-transistor package (3.0 mg typ., 1.6 × 2.8 × 0.9 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN BRT applications.

Compared with RN2911FE,LF and UMX2NTR, the RN1911FETE85LF uniquely combines AEC-Q101 qualification, matched NPN+NPN channels, and optimized 4.7 kΩ/10 kΩ biasing-making it the only choice for automotive dual-switching nodes requiring guaranteed reliability and simplified layout.

Availability

RN1911FETE85LF is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and smart appliance motor control requiring stable component supply and long-term lifecycle assurance.

Supply support for RN1911FETE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components for automotive, industrial, and consumer applications, with global manufacturing and quality systems certified to IATF 16949.

The RN1911FETE85LF belongs to Toshiba's RN-series Bias Resistor Transistor family, engineered specifically for AEC-Q101-compliant dual-channel switching in space-constrained automotive ECUs and industrial control interfaces.

FAQ

What is the junction temperature rating for RN1911FETE85LF?

The RN1911FETE85LF has a maximum junction temperature (T_j) of 150 °C, validated under AEC-Q101 stress testing conditions. This rating applies to both transistors simultaneously under common thermal conditions. Derating is required above 25 °C ambient per Toshiba's Reliability Handbook guidelines. The RN1911FETE85LF must be mounted on thermally adequate copper to maintain safe operation within its 100 mW power dissipation limit.

Does RN1911FETE85LF support automotive applications?

Yes, RN1911FETE85LF is AEC-Q101 qualified and explicitly designated for automotive use per Toshiba's orderable part number list. It meets temperature cycling, humidity bias, and mechanical shock requirements for under-hood and cabin-mounted ECUs. The RN1911FETE85LF is not intended for safety-critical systems like airbag controllers or brake-by-wire, but is approved for door modules, lighting, and HVAC actuators.

What are the exact bias resistor values inside RN1911FETE85LF?

The RN1911FETE85LF integrates two identical bias networks per channel: R1 (base-emitter resistor) is 4.7 kΩ typical (7–13 kΩ max), and R2 (base-collector resistor) is 10 kΩ typical (6.11–13 kΩ max). These values are measured at 25 °C and are process-trimmed during fabrication. No external biasing is required to operate the RN1911FETE85LF as a saturated switch with standard CMOS/TTL logic drive levels.

How does RN1911FETE85LF differ from RN1910FE?

The RN1911FETE85LF and RN1910FE share the same ES6 package, pinout, and absolute maximum ratings, but differ in DC current gain: RN1911FETE85LF specifies h_FE ≥ 120 (min) at I_C = 1 mA, while RN1910FE specifies h_FE ≥ 100. Both are AEC-Q101 qualified and functionally interchangeable in most switching applications, though RN1911FETE85LF offers higher guaranteed gain margin for marginal drive conditions.

Is RN1911FETE85LF RoHS compliant and lead-free?

Yes, RN1911FETE85LF is RoHS compliant and lead-free, as confirmed by Toshiba's environmental compliance documentation. The "LF" suffix denotes lead-free plating, and the device meets EU RoHS Directive 2011/65/EU requirements. Solder reflow profiles must follow JEDEC J-STD-020 for MSL1 handling. The RN1911FETE85LF is compatible with standard SnAgCu (SAC305) reflow processes and requires no special moisture sensitivity precautions.