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Diodes Incorporated UMG4N-7
- Part No.:
- UMG4N-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 5-TSSOP, SC-70-5, SOT-353
- Datasheet:
-
UMG4N-7.pdf
- Description:
- TRANS 2NPN PREBIAS 0.15W SOT353
- Quantity:
- Payment:
- Shipping:
Inventory:8,209
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Product details
Overview
UMG4N-7 from Diodes Incorporated is a dual NPN pre-biased transistor in SOT-353 package, featuring integrated 10 kΩ base resistors (R1), 50 V VCEO, 100 mA IC, hFE of 100–600, and 250 MHz fT, used for digital switching and level translation in compact logic interface circuits.
For engineers reviewing the UMG4N-7 datasheet, UMG4N-7 pinout, UMG4N-7 application, or UMG4N-7 equivalent, key selection criteria include verified dual-NPN topology with monolithic bias resistors, SOT-353 thermal resistance (833 °C/W), guaranteed VCE(SAT) ≤ 0.3 V at 10 mA/1 mA drive, and RoHS-compliant matte tin terminations.
Technical Context
This device integrates two identical NPN transistors with on-die 10 kΩ base-emitter resistors (R1) per channel, eliminating external bias components. It operates with VCEO = 50 V and supports continuous collector currents up to 100 mA per transistor under derated thermal conditions.
The epitaxial planar die construction ensures stable hFE across temperature (−55°C to +150°C), while the 250 MHz fT enables reliable operation in low-speed digital switching (≤10 MHz) and signal buffering applications without oscillation risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown; sets rail compatibility for 3.3 V/5 V logic interfaces. |
| IC | 100 mA - Continuous DC collector current per transistor; supports driving LED loads or small-signal relays. |
| hFE | 100–600 - DC current gain range at 1 mA IC; ensures predictable saturation with standard GPIO drive levels. |
| VCE(SAT) | ≤0.3 V @ IC=10 mA, IB=1 mA - Low saturation voltage minimizes power loss and heat generation in switching mode. |
| fT | 250 MHz - Gain-bandwidth product; confirms suitability for <10 MHz digital edge rates and basic pulse amplification. |
| R1 | 7–13 kΩ - Integrated base resistor value; eliminates need for external biasing and reduces PCB footprint by ~2 components per channel. |
| PD | 150 mW @ TA=25°C - Power dissipation limit; requires thermal derating above 25°C ambient per 833 °C/W θJA. |
Pinout & Package
SOT-353 (SC-88A) 5-pin surface-mount package with gull-wing leads, UL 94V-0 molded plastic body, and matte tin annealed terminations over Alloy 42 leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Q1 | Common emitter node for first NPN transistor; tied directly to PCB ground plane in typical switch configuration. |
| 2 | Base of Q1 | Input control terminal for Q1; internally connected to 10 kΩ resistor R1, enabling direct microcontroller GPIO connection. |
| 3 | Collector of Q1 | Output node for Q1; switches load between VCC and this pin when Q1 is saturated. |
| 4 | Emitter of Q2 | Emitter node for second independent NPN transistor; electrically isolated from Q1's emitter. |
| 5 | Collector of Q2 | Output node for Q2; allows dual-channel independent switching on single 5-pin footprint. |
Key Features
| Feature | Design Value |
|---|---|
| Dual monolithic NPN with integrated R1 | Reduces component count by 4 resistors vs. discrete transistor + bias solution; improves layout repeatability. |
| SOT-353 package | Enables automated pick-and-place assembly and achieves 2.2 mm × 1.35 mm board area per dual channel. |
| VCE(SAT) ≤ 0.3 V | Ensures <30 mW conduction loss at 100 mA, critical for thermally constrained portable designs. |
| RoHS-compliant & "Green" | Meets EU Directive 2011/65/EU and Diodes Inc.'s halogen-free policy; no brominated flame retardants. |
| −55°C to +150°C operation | Validated for under-hood automotive modules and industrial PLC I/O stages without derating. |
Applications
| Logic Level Translation | LED Driver Interface |
|---|---|
Use Scenario: Converting 1.8 V microcontroller outputs to drive 5 V TTL-compatible inputs. IC Role / Device Role / Timing Role: Dual-channel active pull-up switch with fixed bias; provides clean high-level translation without external resistors. Use Value: Eliminates need for discrete level shifter ICs or resistor-divider networks, reducing BOM cost by $0.015/unit at volume. | Use Scenario: Driving multiple indicator LEDs from FPGA I/O banks with limited sink current capability. IC Role / Device Role / Timing Role: Current-amplifying switch; each channel sinks up to 100 mA while maintaining <0.3 V dropout. Use Value: Enables direct LED anode connection to 3.3 V/5 V rails with cathode-to-collector routing, simplifying PCB trace routing. |
| Microcontroller GPIO Expander | Industrial Sensor Signal Conditioning |
Use Scenario: Adding two extra low-side switch outputs to an STM32 MCU with all GPIOs allocated. IC Role / Device Role / Timing Role: Digital output buffer; accepts 3.3 V logic input and delivers 100 mA switched load current. Use Value: Avoids full GPIO expander IC; saves 2.5 mm² board space and eliminates I²C/SPI firmware overhead. | Use Scenario: Isolating and amplifying open-collector sensor outputs (e.g., Hall effect or reed switch) in factory automation controllers. IC Role / Device Role / Timing Role: Voltage-level agnostic interface stage; accepts 5–24 V sensor signals and outputs clean 3.3 V logic-compatible pulses. Use Value: Provides noise-immune signal conditioning with built-in hysteresis via R1 bias network, reducing false triggers by >90% vs. resistor-only solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN pre-biased transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVD2T2225T1G | Higher VCEO (60 V), lower hFE (80–240), same SOT-353 package | Better suited for 24 V industrial sensors; less margin for low-current logic drive | Select when operating above 12 V supply rails or requiring higher breakdown safety margin |
| EMH4N | Same pinout, but includes dual emitter-common configuration (shared emitter pins 1 & 4); R1 = 47 kΩ | Optimized for high-impedance input buffering; not interchangeable for independent dual-switch use | Choose only if circuit requires common-emitter topology and higher input impedance (>100 kΩ) |
Compared with NSVD2T2225T1G and EMH4N, UMG4N-7 offers the broadest hFE range and lowest VCE(SAT), making it optimal for 3.3 V/5 V logic interfacing where drive strength and low conduction loss are prioritized over ultra-high voltage tolerance or shared-emitter constraints.
Availability
UMG4N-7 is available at Aetrix Electronics and suitable for logic level translation, LED driver interface, and microcontroller GPIO expansion requiring stable component supply and consistent SOT-353 tape-and-reel delivery.
Supply support for UMG4N-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The UMG4N-7 belongs to Diodes' pre-biased transistor product line, engineered specifically for space-constrained digital interface applications where reliability, consistency, and assembly efficiency outweigh the flexibility of discrete biasing.
FAQ
What is the maximum allowable junction temperature for UMG4N-7?
The absolute maximum junction temperature is +150°C, with continuous operation rated from −55°C to +150°C. Derating begins at 25°C ambient using θJA = 833 °C/W; at 70°C ambient, maximum power dissipation drops to 90 mW to maintain TJ ≤ 150°C.
Can UMG4N-7 be used in linear amplifier configurations?
No - UMG4N-7 is characterized and optimized for switching operation only. Its integrated R1 resistors fix the base bias point, and electrical specifications (e.g., hFE min/max, VCE(SAT)) are validated exclusively under digital switching conditions per DS31207 Rev. 3-2.
Is pin 2 electrically connected to the internal resistor R1?
Yes - Pin 2 is the base terminal of Q1 and is directly connected to one end of the integrated 10 kΩ resistor R1; the other end of R1 connects internally to Pin 1 (Q1 emitter). This forms a complete base-emitter bias network within the package.
Does UMG4N-7 support hot-swap or in-circuit programming?
No - UMG4N-7 has no ESD protection beyond standard HBM ratings (per JESD22-A114, typical 2 kV), and its absolute maximum ratings do not include transient overvoltage or reverse-bias stress during live insertion. It must be powered down before board insertion or removal.
UMG4N-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 5-TSSOP, SC-70-5, SOT-353
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 250MHz
- Power - Max:
- 150mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-353
UMG4N-7 FAQ
1.How can I place an order for UMG4N-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for UMG4N-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UMG4N-7 reliable?
The price and inventory of UMG4N-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UMG4N-7 is usually 5 days.
3.What payment methods are accepted for UMG4N-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UMG4N-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UMG4N-7?
UMG4N-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UMG4N-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UMG4N-7?
For technical support, including UMG4N-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UMG4N-7 requirements.
6.How does Aetrix verify that UMG4N-7 is sourced from the original manufacturer or authorized distributors?
All UMG4N-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UMG4N-7 meets industry standards.
7.What is the process for return or replacement of UMG4N-7?
All UMG4N-7 units undergo pre-shipment inspection (PSI). If there is an issue with UMG4N-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UMG4N-7 part is unused and in its original packaging.
Return procedure for UMG4N-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UMG4N-7 Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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